公开(公告)号：US06485975B1

公开(公告)日：2002-11-26

申请号：US09537249

申请日：2000-03-28

申请人： Harish Chandra Chaturvedi ,  Sunil Kumar Singh ,  Ashok Kumar Sharma

发明人： Harish Chandra Chaturvedi ,  Sunil Kumar Singh ,  Ashok Kumar Sharma

IPC分类号： C12N500

CPC分类号： C12N5/04

摘要： The invention provides a method for regenerating viable and fertile Citrus plants by tissue culture from explants of field-grown mature trees, said method comprising the steps of incubating the explant in agarified media to develop axillary buds, subculturing the explant alongwith sprouted axillary buds in agarified media, excising the meristem domes along with leaf primordia in another medium to generate shoots, subculturing the meristem-regenerated shoots on filter paper bridge employing a liquid medium in order to obtain healthy shoots of an average length of about 1.5 cm without intervening callusing within a period of 20-25 days, proliferating the meristem-regenerated shoots in agarified media to obtain well-developed shoots, rooting the isolated well-developed shoots in agarified media, transferring the freshly developed roots of Citrus sinensis to a different medium while allowing the shoots of C. aurantifolia to grow in the same medium for about 15 days to develop tap roots, hardening the rooted shoots ex vitro in a liquid medium, and allowing the shoots to grow in the same medium under incubation conditions, transferring the hardened shoot meristem-raised plants to soilrite in pro-trays for ex vitro growth for about 7 days to ensure 95% to 100% survival of the shoot meristem raised Citrus plants.

摘要翻译： 本发明提供了一种通过组织培养从田间生长的成熟树的外植体中再生有效和可育的柑橘植物的方法，所述方法包括以下步骤：将培养物在琼脂培养基中培养以产生腋芽，将外植体与发芽的腋芽一起在琼脂培养 介质，在另一种培养基中切断分生组织圆顶以及叶原基以产生枝条，将采用液体培养基的滤纸桥上的分生组织再生芽再传代培养，以获得平均长度约1.5cm的健康枝条，而不需要在 在20-25天的时间内，在琼脂培养基中增殖分生组织再生芽以获得发育良好的芽，在琼脂培养基中生根分离的发育良好的枝条，将新鲜发育的柑橘根根转移到不同的培养基上，同时允许芽 的C.aurantifolia在相同的培养基中生长约15天以发育自来水，ha 在液体培养基中体外培养生根，并允许芽在孵育条件下在相同的培养基中生长，将硬化的枝叶分生组织培养的植物转移到原盘中的土壤中以进行体外生长约7天以确保95 百分之百至100％的枝条分生组织生长提高了柑橘植物。

公开(公告)号：US20130334700A1

公开(公告)日：2013-12-19

申请号：US13526640

申请日：2012-06-19

申请人： Sunil Kumar Singh ,  Chung-Ju Lee ,  Tien-I Bao

发明人： Sunil Kumar Singh ,  Chung-Ju Lee ,  Tien-I Bao

IPC分类号： H01L23/48 ,  H01L21/283 ,  H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a dual damascene metal interconnect for a semiconductor device. The method includes forming a layer of low-k dielectric, forming vias through the low-k dielectric layer, depositing a sacrificial layer, forming trenches through the sacrificial layer, filling the vias and trenches with metal, removing the sacrificial layer, then depositing an extremely low-k dielectric layer to fill between the trenches. The method allows the formation of an extremely low-k dielectric layer for the second level of the dual damascene structure while avoiding damage to that layer by such processes as trench etching and trench metal deposition. The method has the additional advantage of avoiding an etch stop layer between the via level dielectric and the trench level dielectric.

摘要翻译： 一种形成用于半导体器件的双镶嵌金属互连的方法。 该方法包括形成低k电介质层，通过低k电介质层形成通孔，沉积牺牲层，通过牺牲层形成沟槽，用金属填充通孔和沟槽，去除牺牲层，然后沉积 极低k电介质层填充沟槽之间。 该方法允许形成用于第二级双镶嵌结构的极低k电介质层，同时通过沟槽蚀刻和沟槽金属沉积等工艺避免对该层的损伤。 该方法具有避免通孔级电介质和沟槽级电介质之间的蚀刻停止层的额外优点。

公开(公告)号：US07230129B2

公开(公告)日：2007-06-12

申请号：US11247490

申请日：2005-10-11

申请人： Potlapally Rejender Kumar ,  Velagala V. R. M. K. Reddy ,  Jangalgar Tirupathy Reddy ,  Gurram Ranga Madhaven ,  Sunil Kumar Singh

发明人： Potlapally Rejender Kumar ,  Velagala V. R. M. K. Reddy ,  Jangalgar Tirupathy Reddy ,  Gurram Ranga Madhaven ,  Sunil Kumar Singh

IPC分类号： C07C69/76

CPC分类号： C07C51/412 ,  C07B2200/07 ,  C07C51/487 ,  C07C67/08 ,  C07C59/68 ,  C07C69/712

摘要： The invention provides a process for preparing R-(+)-2-(4-hydroxyphenoxy)-2-methyl-butyric acid methyl ester of the formula (I): Various embodiments and variants are provided. The invention also provides a process for preparing S-(−)-2-(4-hydroxyphenoxy)-2-methyl-butyric acid methyl ester of the formula (II) Various embodiments and variants are provided.

摘要翻译： 本发明提供了制备式（I）的R - （+） - 2-（4-羟基苯氧基）-2-甲基 - 丁酸甲酯的方法：提供了各种实施方案和变体。 本发明还提供了制备式（II）的S - （ - ） - 2-（4-羟基苯氧基）-2-甲基 - 丁酸甲酯的方法。提供了各种实施方案和变体。

公开(公告)号：US20080114005A1

公开(公告)日：2008-05-15

申请号：US11574702

申请日：2005-09-06

申请人： Saibal Kumar Das ,  Sunil Kumar Singh ,  Gurram Ranga Madhavan ,  Debnath Bhuniya ,  Javed Iqbal ,  Sudhir Kumar Sharma ,  Ranjan Chakrabarti

发明人： Saibal Kumar Das ,  Sunil Kumar Singh ,  Gurram Ranga Madhavan ,  Debnath Bhuniya ,  Javed Iqbal ,  Sudhir Kumar Sharma ,  Ranjan Chakrabarti

IPC分类号： A61K31/519 ,  C07D487/02

CPC分类号： C07D487/04 ,  C07D239/90

摘要： There are provided derivatives having PPAR agonist activity. The derivatives include compounds and/or their pharmaceutically acceptable salts; the compounds having the formula (I) wherein A has the structure (II) or (III); X is chosen from —CH2—, —O—, —NH—, and —S—; Y is chosen from —O—, —NH—, and —S—; Z, which may be located in any position of substitution, is hydrogen or halogen; R1 and R2, which may be the same or different, are independently chosen from hydrogen and C1-C8 alkyl, or R1 and R2 together form a carbocyclic ring having from 4 to 6 carbon atoms; R3 is chosen from hydrogen and C1-C8 alkyl; R4, R5, and R6, which may be the same or different, are independently chosen from hydrogen and C1-C8 alkyl; and n is 1 to 6. Various embodiments and variants are provided. In accordance with other aspects, the invention also provides methods of producing a PPARα agonist activity in a mammal, the methods including administering to the mammal an effective amount of certain derivative(s) of the first aspect of the invention, a method of producing a PPARα agonist activity and a PPARα agonist activity in a mammal, the method including administering to the mammal an effective amount of certain derivative(s); and a pharmaceutical composition that includes the derivative(s) of the first aspect of the invention and one or more pharmaceutically-acceptable excipients. Various embodiments and variants are provided.

摘要翻译： 提供具有PPAR激动剂活性的衍生物。 衍生物包括化合物和/或其药学上可接受的盐; 具有式（I）的化合物其中A具有结构（II）或（III）; X选自-CH 2 - ， - O - ， - N - 和-S-; Y选自-O - ， - NH-和-S-; 可以位于任何取代位置的Z是氢或卤素; R 1和R 2可以相同或不同，独立地选自氢和C 1 -C 8烷基， 或者R 1和R 2一起形成具有4至6个碳原子的碳环; R 3选自氢和C 1 -C 8烷基; R 4，R 5，R 5和R 6可以相同或不同，独立地选自氢和C 1 C 8 -C 14烷基; 并且n为1至6.提供了各种实施方案和变体。 根据其它方面，本发明还提供了在哺乳动物中产生PPARα激动剂活性的方法，所述方法包括向哺乳动物施用有效量的本发明第一方面的某些衍生物， PPARα激动剂活性和哺乳动物中的PPARα激动剂活性，所述方法包括向哺乳动物施用有效量的某些衍生物; 和包含本发明第一方面的衍生物和一种或多种药学上可接受的赋形剂的药物组合物。 提供了各种实施例和变型。

公开(公告)号：US08652962B2

公开(公告)日：2014-02-18

申请号：US13526640

申请日：2012-06-19

申请人： Sunil Kumar Singh ,  Chung-Ju Lee ,  Tien-I Bao

发明人： Sunil Kumar Singh ,  Chung-Ju Lee ,  Tien-I Bao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a dual damascene metal interconnect for a semiconductor device. The method includes forming a layer of low-k dielectric, forming vias through the low-k dielectric layer, depositing a sacrificial layer, forming trenches through the sacrificial layer, filling the vias and trenches with metal, removing the sacrificial layer, then depositing an extremely low-k dielectric layer to fill between the trenches. The method allows the formation of an extremely low-k dielectric layer for the second level of the dual damascene structure while avoiding damage to that layer by such processes as trench etching and trench metal deposition. The method has the additional advantage of avoiding an etch stop layer between the via level dielectric and the trench level dielectric.

摘要翻译： 一种形成用于半导体器件的双镶嵌金属互连的方法。 该方法包括形成低k电介质层，通过低k电介质层形成通孔，沉积牺牲层，通过牺牲层形成沟槽，用金属填充通孔和沟槽，去除牺牲层，然后沉积 极低k电介质层填充沟槽之间。 该方法允许形成用于第二级双镶嵌结构的极低k电介质层，同时通过沟槽蚀刻和沟槽金属沉积等工艺避免对该层的损伤。 该方法具有避免通孔级电介质和沟槽级电介质之间的蚀刻停止层的额外优点。

公开(公告)号：US07682963B2

公开(公告)日：2010-03-23

申请号：US11867308

申请日：2007-10-04

申请人： Hai-Ching Chen ,  Sunil Kumar Singh ,  Tien-I Bao ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Hai-Ching Chen ,  Sunil Kumar Singh ,  Tien-I Bao ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method for fabricating an integrated circuit. The method includes forming an energy removable film (ERF) on a substrate; forming a first dielectric layer on the ERF; patterning the ERF and first dielectric layer to form a trench in the ERF and the first dielectric layer; filling a conductive material in the trench; forming a ceiling layer on the first dielectric layer and conductive material filled in the trench; and applying energy to the ERF to form air gaps in the ERF after the forming of the ceiling layer.

摘要翻译： 本公开提供了一种用于制造集成电路的方法。 该方法包括在基板上形成能量可去除膜（ERF）; 在ERF上形成第一介电层; 图案化ERF和第一介电层以在ERF和第一介电层中形成沟槽; 在沟槽中填充导电材料; 在第一介电层上形成顶层和填充在沟槽中的导电材料; 并且在形成天花板层之后，向ERF施加能量以在ERF中形成气隙。

公开(公告)号：US20090091038A1

公开(公告)日：2009-04-09

申请号：US11867308

申请日：2007-10-04

申请人： Hai-Ching Chen ,  Sunil Kumar Singh ,  Tien-I Bao ,  Shau-Lin Shue ,  Chen-Hua Yu

发明人： Hai-Ching Chen ,  Sunil Kumar Singh ,  Tien-I Bao ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method for fabricating an integrated circuit. The method includes forming an energy removable film (ERF) on a substrate; forming a first dielectric layer on the ERF; patterning the ERF and first dielectric layer to form a trench in the ERF and the first dielectric layer; filling a conductive material in the trench; forming a ceiling layer on the first dielectric layer and conductive material filled in the trench; and applying energy to the ERF to form air gaps in the ERF after the forming of the ceiling layer.

摘要翻译： 本公开提供了一种用于制造集成电路的方法。 该方法包括在基板上形成能量可去除膜（ERF）; 在ERF上形成第一介电层; 图案化ERF和第一介电层以在ERF和第一介电层中形成沟槽; 在沟槽中填充导电材料; 在第一介电层上形成顶层和填充在沟槽中的导电材料; 并且在形成天花板层之后，向ERF施加能量以在ERF中形成气隙。

公开(公告)号：US09353114B2

公开(公告)日：2016-05-31

申请号：US14421896

申请日：2013-08-06

申请人： Sunil Kumar Singh ,  Sachin Srivastava ,  Shekhar Bhaskar Bhirud

发明人： Sunil Kumar Singh ,  Sachin Srivastava ,  Shekhar Bhaskar Bhirud

IPC分类号： C07D401/04 ,  C07D473/06 ,  C07D473/04

CPC分类号： C07D473/18 ,  C07C69/78 ,  C07D401/04 ,  C07D473/04 ,  C07D473/06

摘要： Provided is a process for the preparation of linagliptin of Formula I, comprising deprotecting a compound of Formula II wherein R1 and R2 together with the nitrogen to which they are attached form a phthalimido group, wherein the aromatic ring of the phthalimido group is substituted with one or more R3 substituents selected from the group consisting of halogen, alkyi, nitro and amino; or R1 is H and R2 is selected from the group consisting of trialkylsilyl, 2-trialkylsilylethoxycarbamates, acetyl, trihaloacetyl, 9-fluorenylmethoxycarbonyl, trityl, alkylsulfonyl, arylsulfonyl, diphenylphosphine and sulfonylethoxycarbonyl.

摘要翻译： 本发明提供制备式I的利格列汀的方法，其包括使式II化合物脱保护，其中R 1和R 2与它们所连接的氮一起形成苯二甲酰亚氨基，其中苯二酰亚氨基的芳环被一个 或更多选自卤素，烷基，硝基和氨基的R3取代基; 或R 1为H且R 2选自三烷基甲硅烷基，2-三烷基硅烷基乙氧基氨基甲酸酯，乙酰基，三卤代乙酰基，9-芴基甲氧基羰基，三苯甲基，烷基磺酰基，芳基磺酰基，二苯基膦和磺酰基乙氧基羰基。