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公开(公告)号:US5028983A
公开(公告)日:1991-07-02
申请号:US263835
申请日:1988-10-27
申请人: Harry R. Bickford , Mark F. Bregman , Thomas M. Cipolla , John Gow, III , Peter G. Ledermann , Ekkehard F. Miersch , Leonard T. Olson , David P. Pagnani , Timothy C. Reiley , Uh-Po E. Tsou , Walter V. Vilkelis
发明人: Harry R. Bickford , Mark F. Bregman , Thomas M. Cipolla , John Gow, III , Peter G. Ledermann , Ekkehard F. Miersch , Leonard T. Olson , David P. Pagnani , Timothy C. Reiley , Uh-Po E. Tsou , Walter V. Vilkelis
IPC分类号: H01L21/60 , H01L23/495 , H01L23/498
CPC分类号: H01L24/50 , H01L23/49572 , H01L23/49861 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/3011
摘要: Electronic device packaging structures useful for electrically interconnecting an electronic device to a substrate. The structure contains at least two metallization layers with dielectric layers between adjacent to metallization layers. The dielectric layers can have variable thickness. Beam leads can project inwardly in cantilevered fashion over a central aperture through the dielectric layers. The inner ends of the beam leads lie substantially in one plane and can be bonded to contact pads on integrated circuit electronic devices. Beam leads can project outwardly from the metallization layers over outer edges of the dielectric layers for bonding to contact pads on a substrate. Signal leads on metallization layers can be symmetrically arranged between ground and voltage leads to provide optimal impedance properties. These structures are useful for tape automated bonding applications.
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公开(公告)号:US4544782A
公开(公告)日:1985-10-01
申请号:US576051
申请日:1984-02-01
申请人: Orville L. Chapman , Uh-Po E. Tsou
发明人: Orville L. Chapman , Uh-Po E. Tsou
摘要: Single-stage thermolysis of C.sub.8 and C.sub.9 aromatics at temperatures in excess of 900.degree. C. and pressures of less than 0.2 torr or in the presence of steam in excess of 800.degree. C., in the absence of catalysts yields styrene and/or p-methylstyrene in high yields, providing a process for the conversion of xylenes and p-ethyltoluene to preferred styrene monomers.
摘要翻译: C8和C9芳族化合物在超过900℃的温度和小于0.2托的压力下或在超过800℃的蒸汽存在下单阶段热分解,在不存在催化剂的情况下产生苯乙烯和/或p 甲基苯乙烯,提供了将二甲苯和对乙基甲苯转化为优选的苯乙烯单体的方法。
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