公开(公告)号：US06342720B1

公开(公告)日：2002-01-29

申请号：US09445172

申请日：2000-04-03

申请人： Hartmut Presting ,  Lorenzo Colace ,  Gianlorenzo Masini ,  Thomas Pearsall

发明人： Hartmut Presting ,  Lorenzo Colace ,  Gianlorenzo Masini ,  Thomas Pearsall

IPC分类号： H01L3100

CPC分类号： B82Y20/00 ,  H01L31/035254 ,  H01L31/108

摘要： A voltage-controlled, wavelenght-selective photodetector includes comprising a double diode having a counter-polarized Si-Schottky diode and a SiGe PIN diode. The short-wave portion (&lgr;

摘要翻译： 电压控制的波长选择性光电检测器包括具有反极化Si肖特基二极管和SiGe PIN二极管的双二极管。 通过窗口进入检测器的光的短波部分（lambd <0.9mum）在Si-肖特基二极管中产生电子 - 空穴对，而较长波长部分（1mum

公开(公告)号：US08148794B2

公开(公告)日：2012-04-03

申请号：US11793238

申请日：2004-12-24

申请人： Gianlorenzo Masini ,  Lorenzo Colace ,  Gaetano Assanto

发明人： Gianlorenzo Masini ,  Lorenzo Colace ,  Gaetano Assanto

IPC分类号： H01L31/0232

CPC分类号： H01L31/1808 ,  G02B6/4204 ,  H01L31/109 ,  Y02E10/50

摘要： A photodetector structure includes a silicon-based waveguide in which optical signals to be detected travel in a given direction and are confined therein and a germanium layer disposed in contact with a portion of the silicon-based waveguide so that an evanescent tail of the propagating optical signal in the waveguide is coupled into the germanium layer. In addition, the germanium layer includes a mesa having a length along the signal propagating direction and a width in a direction substantially perpendicular to the propagating direction, in which the width of said mesa is smaller than its length. The photodetector also comprises a first and a second metal contacts, the first metallic contact being located on the germanium layer, the said second metallic contact being located on the silicon-based waveguide, the first and second contacts being used to collect electrons generated by light absorption to obtain an output electric signal.

摘要翻译： 光检测器结构包括硅基波导，其中待检测的光信号在给定方向上行进并被限制在其中，并且锗层设置成与硅基波导的一部分接触，使得传播光学的渐逝尾 波导中的信号被耦合到锗层中。 另外，锗层包括沿着信号传播方向具有长度的台面和在与传播方向基本垂直的方向上的宽度，其中所述台面的宽度小于其长度。 光检测器还包括第一和第二金属触点，第一金属触点位于锗层上，所述第二金属触点位于硅基波导上，第一和第二触点用于收集由光产生的电子 吸收以获得输出电信号。

公开(公告)号：US20080073744A1

公开(公告)日：2008-03-27

申请号：US11793238

申请日：2004-12-24

申请人： Gianlorenzo Masini ,  Lorenzo Colace ,  Gaetano Assanto

发明人： Gianlorenzo Masini ,  Lorenzo Colace ,  Gaetano Assanto

IPC分类号： H01L31/00

CPC分类号： H01L31/1808 ,  G02B6/4204 ,  H01L31/109 ,  Y02E10/50

摘要： A photodetector structure includes a silicon-based waveguide in which optical signals to be detected travel in a given direction and are confined therein and a germanium layer disposed in contact with a portion of the silicon-based waveguide so that an evanescent tail of the propagating optical signal in the waveguide is coupled into the germanium layer. In addition, the germanium layer includes a mesa having a length along the signal propagating direction and a width in a direction substantially perpendicular to the propagating direction, in which the width of said mesa is smaller than its length. The photodetector also comprises a first and a second metal contacts, the first metallic contact being located on the germanium layer, the said second metallic contact being located on the silicon-based waveguide, the first and second contacts being used to collect electrons generated by light absorption to obtain an output electric signal.

摘要翻译： 光检测器结构包括硅基波导，其中待检测的光信号在给定方向上行进并被限制在其中，并且锗层设置成与硅基波导的一部分接触，使得传播光学的渐逝尾 波导中的信号被耦合到锗层中。 另外，锗层包括沿着信号传播方向具有长度的台面和在与传播方向基本垂直的方向上的宽度，其中所述台面的宽度小于其长度。 光检测器还包括第一和第二金属触点，第一金属触点位于锗层上，所述第二金属触点位于硅基波导上，第一和第二触点用于收集由光产生的电子 吸收以获得输出电信号。

公开(公告)号：US06678293B2

公开(公告)日：2004-01-13

申请号：US10288326

申请日：2002-11-05

申请人： Lorenzo Colace ,  Gianlorenzo Masini

发明人： Lorenzo Colace ,  Gianlorenzo Masini

IPC分类号： H01S313

CPC分类号： H01S5/0687 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/109 ,  H01S5/0264 ,  H01S5/042

摘要： A device for stabilizing the operating wavelength (&lgr;) of an electro-optical component having a nominal operating wavelength (&lgr;0) by a wavelength influencing circuit adapted to be driven by a control signal. The device comprises a semiconductor photodiode adapted to be impinged upon by the radiation generated and/or processed by the component and to generate an output signal which is indicative of a difference of the wavelength of the radiation ((&lgr;) with respect to the nominal operating wavelength (&lgr;0, &lgr;i). The semiconductor photodiode includes a plurality of layers jointly defining two opposite diodes generating opposite photocurrents as a result of radiation impinging onto the photodiode. The opposite photocurrents are adapted to generate the control signal to effect the stabilization action.

摘要翻译： 用于通过适于由控制信号驱动的波长影响电路来稳定具有标称工作波长（λ0）的电光部件的工作波长（λ）的装置。 该器件包括半导体光电二极管，该半导体光电二极管适于被组件产生和/或处理的辐射照射，并产生一个输出信号，该信号表示辐射波长（（λ））相对于标称工作 波长（λ0，lambdai）。半导体光电二极管包括多个层，共同限定由于辐射照射到光电二极管上而产生相反光电流的两个相反的二极管，相反的光电流适于产生控制信号以实现稳定作用。