摘要:
The present invention relates to a macrolide compound expected to have a cell growth-inhibiting activity and a novel anticancer drug utilizing the compound. Specifically, the invention relates to a compound represented by Formula (I) or (II) or a pharmaceutically acceptable salt thereof and relates to a cell growth inhibitor and an anticancer drug each containing the compound or the salt as an active ingredient.
摘要:
The present invention relates to a macrolide compound expected to have a cell growth-inhibiting activity and a novel anticancer drug utilizing the compound. Specifically, the invention relates to a compound represented by Formula (I) or (II) or a pharmaceutically acceptable salt thereof and relates to a cell growth inhibitor and an anticancer drug each containing the compound or the salt as an active ingredient.
摘要:
A method for the producing cyclic polyether structures at room temperature, in high yield and in a convergent manner, that may be applied to the synthesis of gambierol and ciguatoxin, without using an excessive amount of phosphate compound, alkylborane and cyclic ketene acetal phosphate are subjected to cross-coupling in the presence of a basic aqueous solution using palladium [1,1′-bis(diphenylphosphino)ferrocene] chloride as a catalyst.
摘要:
An image forming system includes one or more image forming apparatuses and an information processing apparatus connected to the one or more image forming apparatuses through a network. The information processing apparatus includes circuitry that registers an image forming job that is received from one of the image forming apparatuses in association with information on a user who has authority to execute the image forming job, acquires information on a location of the user, determines whether or not the user is located at a first area based on the information on the location of the first user to generate a first determination result, and determines an operation to be performed on the image forming job based on the first determination result.
摘要:
A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.
摘要:
A charging processing system includes: a receiving unit configured to receive a request to execute a first function which a first device has, from a second device that does not have the first function; a function executing unit configured to execute the first function; and a charging processing unit configured to perform charging processing such that an amount of charge for execution of the first function is larger as there is a larger difference between a performance with regard to the first function and a performance of the second device or a performance with regard to a second function which has a lower performance than the first function and which the second device does not have.
摘要:
An operation unit in a child device causes a main unit in the child device to execute a stand-alone job, and causes the main unit and a server device to execute a cooperating job. The main unit executes the stand-alone job every time it is requested, and generates and manages a stand-alone job log including stand-alone job log identification information. The server device controls the execution of stand-alone jobs included in the cooperating job based on a request for executing the cooperating job, and manages cooperating job identification information associated with the stand-alone job log identification information of the stand-alone jobs included in the cooperating job. The server device acquires the stand-alone job logs from the main unit and extracts the stand-alone job logs including the stand-alone job log identification information associated with the cooperating job identification information, to generate a cooperating job log corresponding to the cooperating job.
摘要:
Provided is a wire rod for an I-type oil ring, which includes right and left rail portions and a web portion connecting the rail portions, which has an oil hole or a molten through hole formed in the web portion, and which has a circumscribing circle diameter of 10 mm or less in its transverse contour. The molten through hole has such a remolten portion formed on its exit side as encloses the exit of the molten through hole. The remolten portion exceeds such a molten portion in the transverse section along the center of the molten through hole as is formed in the molten through hole, and is formed to have 200 μm or less from the outer circumference of the molten through hole and 100 μm or less in the depth direction of the molten through hole.
摘要:
An image forming system includes mobile terminals and image forming apparatuses, in which one image forming apparatus receives setting information to be used in order to use the image forming apparatus, the setting information being stored in one mobile terminal and able to be transmitted to another mobile terminal that will use another image forming apparatus based on the setting information. The one image forming apparatus determines whether the setting information is to be changed based on a comparison between the ability of the image forming apparatuses and, when determining that the setting information is to be changed, changes the setting information and send the changed setting information to the other mobile terminal.
摘要:
A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.