公开(公告)号：US09947782B2

公开(公告)日：2018-04-17

申请号：US13634860

申请日：2010-12-20

申请人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

发明人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02008 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

公开(公告)号：US20130009171A1

公开(公告)日：2013-01-10

申请号：US13634860

申请日：2010-12-20

申请人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

发明人： Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Keiji Wada ,  Tomihito Miyazaki

IPC分类号： H01L29/161 ,  H01L21/20

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/02008 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/7395

摘要： A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

摘要翻译： 半导体器件具有半导体层和衬底。 半导体层构成电流路径的至少一部分，并且由碳化硅制成。 衬底具有支撑半导体层的第一表面和与第一表面相对的第二表面。 此外，基板由具有4H型单晶结构的碳化硅制成。 另外，在光致发光测定中，基板具有波长为500nm左右的峰值强度与波长390nm左右的峰值强度的比例为0.1以下的物性。 以这种方式，获得具有低导通电阻的半导体器件。

公开(公告)号：US20120126251A1

公开(公告)日：2012-05-24

申请号：US13388691

申请日：2011-02-25

申请人： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

发明人： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/2007 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate.

摘要翻译： 制造碳化硅衬底的方法降低了制造成本。 该方法包括以下步骤：制备基底和SiC衬底; 通过堆叠基底基板和SiC基板来制造堆叠的基板; 通过加热堆叠的基板来制造连接的基板; 通过加热连接的基板，在连接的基板的厚度方向上形成在连接界面处形成的空隙，使得基底基板的温度高于SiC基板的温度; 并且通过去除包括与SiC衬底相对的基底衬底的主表面的区域来去除空隙。

公开(公告)号：US20120091472A1

公开(公告)日：2012-04-19

申请号：US13377360

申请日：2011-02-23

申请人： Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Tomihito Miyazaki

发明人： Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Tomihito Miyazaki

IPC分类号： H01L29/24

CPC分类号： H01L29/1608 ,  C30B29/36 ,  C30B33/00 ,  H01L29/24

摘要： A first circular surface is provided with a first notch portion having a first shape. A second circular surface is opposite to the first circular surface and is provided with a second notch portion having a second shape. A side surface connects the first circular surface and the second circular surface to each other. The first notch portion and the second notch portion are opposite to each other. The side surface has a first depression connecting the first notch portion and the second notch portion to each other.

摘要翻译： 第一圆形表面设置有具有第一形状的第一切口部分。 第二圆形表面与第一圆形表面相对，并且设置有具有第二形状的第二切口部分。 侧表面将第一圆形表面和第二圆形表面彼此连接。 第一切口部和第二切口部彼此相对。 侧面具有将第一切口部和第二切口部彼此连接的第一凹部。

公开(公告)号：US20120070605A1

公开(公告)日：2012-03-22

申请号：US13375287

申请日：2010-09-17

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： B32B7/04 ,  B28D5/00 ,  C30B23/02 ,  C01B31/36 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/00 ,  H01L21/02002 ,  Y10T428/192

摘要： An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

摘要翻译： SiC锭包括具有4个侧面的底面; 四个侧面从与底面方向相交的方向从底面延伸; 以及与位于与底面相对的一侧的侧面连接的生长面。 底面，侧面和生长面中的至少一个是{0001}面，{1-100}面，{11-20}面，或相对于这些平面倾斜10°以内的平面 。

公开(公告)号：US20120017826A1

公开(公告)日：2012-01-26

申请号：US13258126

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： C30B23/06

CPC分类号： C30B29/36 ,  C30B23/025 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L29/1608

摘要： A supporting portion (30c) made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion (30c) and at least one single crystal substrate (11) made of silicon carbide are stacked such that the backside surface (B1) of each at least one single crystal substrate (11) and the main surface (FO) of the supporting portion (30c) having irregularities formed contact each other. In order to connect the backside surface (B1) of each at least one single crystal substrate (11) to the supporting portion (30c), the supporting portion (30c) and at least one single crystal substrate (11) are heated such that the temperature of the supporting portion (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate (11) is below the temperature of the supporting portion (30c).

摘要翻译： 由碳化硅制成的支撑部分（30c）在主表面（FO）的至少一部分处具有凹凸。 支撑部（30c）和由碳化硅构成的至少一个单晶基板（11）被层叠，使得每个至少一个单晶基板（11）的背面（B1）和主晶面 具有形成彼此接触的凹凸的支撑部（30c）。 为了将每个至少一个单晶衬底（11）的背面（B1）连接到支撑部分（30c），支撑部分（30c）和至少一个单晶衬底（11）被加热，使得 支撑部分（30c）的温度超过碳化硅的升华温度，并且每个至少一个单晶衬底（11）的温度低于支撑部分（30c）的温度。

公开(公告)号：US20110278593A1

公开(公告)日：2011-11-17

申请号：US13104219

申请日：2011-05-10

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/12 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  C30B23/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible.

摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热坩埚中的基底基底而形成与碳化硅基体的主表面接触的碳化硅制成的基底层，使其落入构成基底基板的碳化硅的升华温度以上的温度范围内。 在形成基层的步骤中，将含硅的气体引入坩埚中。

公开(公告)号：US08435866B2

公开(公告)日：2013-05-07

申请号：US13256991

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： C30B29/36 ,  C30B33/06

摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

公开(公告)号：US20120184113A1

公开(公告)日：2012-07-19

申请号：US13395793

申请日：2011-01-07

申请人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L21/30 ,  H05B3/02

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068

摘要： A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently.

摘要翻译： 执行制备叠层的步骤，将第一单晶衬底组和第一衬底中的每个单晶衬底彼此面对，将每个单晶衬底放置在第二单晶衬底组中， 第二基板彼此面对，并且在一个方向上依次堆叠第一单晶基板组，第一基板，插入部，第二单晶基板组和第二基板。 接下来，对叠层进行加热，以使堆叠的温度达到碳化硅可以升华的温度，并且在上述方向上随着温度升高而在叠层中形成温度梯度。 以这种方式，可以有效地制造碳化硅衬底。

公开(公告)号：US20110233561A1

公开(公告)日：2011-09-29

申请号：US13073385

申请日：2011-03-28

申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66068

摘要： A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween.

摘要翻译： 支撑部分由碳化硅制成。 至少一层具有第一和第二表面。 第一表面由支撑部分支撑。 所述至少一层具有第一和第二区域。 第一区域由单晶结构的碳化硅制成。 第二区域由石墨制成。 第二表面具有由第一区域形成的表面。 第一表面具有由第一区域形成的表面和由第二区域形成的表面。 以这种方式，可以提供具有由具有单晶结构的碳化硅制成的区域和由碳化硅制成的支撑部分的区域并且允许其之间的界面的电阻降低的半导体衬底。