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55 条记录 (耗时 0.022 秒)

    Switching element
    2.
    发明授权
    Switching element 有权
    开关元件

    公开(公告)号：US07227178B2

    公开(公告)日：2007-06-05

    申请号：US10545855

    申请日：2004-02-13

    申请人： Haruo Kawakami ,  Hisato Kato ,  Takuji Iwamoto

    发明人： Haruo Kawakami ,  Hisato Kato ,  Takuji Iwamoto

    IPC分类号： H01L29/08

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0014 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0575 ,  H01L51/0595

    摘要： The present invention provides a switching element in which an organic bistable material is disposed between two electrodes, this element having a high ratio of ON current to OFF current, a high threshold voltage, and a small spread. A switching element in which an organic bistable material layer comprising an organic bistable material having two stable values of resistance with respect to the applied voltage is disposed between at least two electrodes, wherein an organic material layer is provided between the organic bistable material layer and at least one of the electrodes. Electrically conductive fine particles are preferably dispersed in the organic materials layer.

    摘要翻译： 本发明提供一种开关元件，其中有机双稳态材料设置在两个电极之间，该元件具有高的导通电流与截止电流的比率，高的阈值电压和小的扩展。 一种开关元件，其中包含有机双稳态材料层的有机双稳态材料层具有相对于施加电压的两个稳定的电阻值设置在至少两个电极之间，其中有机材料层设置在有机双稳态材料层和有机双稳态材料层之间 至少一个电极。 导电性微粒优选分散在有机材料层中。

    Switching element
    3.
    发明申请
    Switching element 有权
    开关元件

    公开(公告)号：US20060102892A1

    公开(公告)日：2006-05-18

    申请号：US10545855

    申请日：2004-02-13

    申请人： Haruo Kawakami ,  Hisato Kato ,  Takuji Iwamoto

    发明人： Haruo Kawakami ,  Hisato Kato ,  Takuji Iwamoto

    IPC分类号： H01L29/08

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0014 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0575 ,  H01L51/0595

    摘要： The present invention provides a switching element in which an organic bistable material is disposed between two electrodes, this element having a high ratio of ON current to OFF current, a high threshold voltage, and a small spread. A switching element in which an organic bistable material layer comprising an organic bistable material having two stable values of resistance with respect to the applied voltage is disposed between at least two electrodes, wherein an organic material layer is provided between the organic bistable material layer and at least one of the electrodes. Electrically conductive fine particles are preferably dispersed in the organic materials layer.

    摘要翻译： 本发明提供一种开关元件，其中有机双稳态材料设置在两个电极之间，该元件具有高的导通电流与截止电流的比率，高的阈值电压和小的扩展。 一种开关元件，其中包含有机双稳态材料层的有机双稳态材料层具有相对于施加电压的两个稳定的电阻值设置在至少两个电极之间，其中有机材料层设置在有机双稳态材料层和有机双稳态材料层之间 至少一个电极。 导电性微粒优选分散在有机材料层中。

    Switching device
    4.
    发明申请
    Switching device 有权

    公开(公告)号：US20060284155A1

    公开(公告)日：2006-12-21

    申请号：US11444133

    申请日：2006-05-30

    申请人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    发明人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    IPC分类号： H01L29/00

    CPC分类号： H01L51/0052 ,  B82Y10/00 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0591 ,  H01L51/0595

    摘要： A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

    Oxide semiconductor, thin-film transistor and method for producing the same
    5.
    发明授权
    Oxide semiconductor, thin-film transistor and method for producing the same 失效
    氧化物半导体，薄膜晶体管及其制造方法

    公开(公告)号：US07807515B2

    公开(公告)日：2010-10-05

    申请号：US12086628

    申请日：2007-05-25

    申请人： Hisato Kato ,  Haruo Kawakami ,  Nobuyuki Sekine ,  Kyoko Kato

    发明人： Hisato Kato ,  Haruo Kawakami ,  Nobuyuki Sekine ,  Kyoko Kato

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/78693 ,  C01G19/006 ,  C01P2006/40 ,  H01L29/66969

    摘要： Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

    摘要翻译： 公开了具有非晶结构的氧化物半导体，其中实现了更高的迁移率和降低的载流子浓度。 还公开了薄膜晶体管，氧化物半导体的制造方法以及薄膜晶体管的制造方法。 具体公开了一种氧化物半导体，其特征在于由以下通式表示的无定形氧化物组成：Inx + 1MZny + 1SnzO（4 + 1.5x + y + 2z）（其中M为Ga或Al，0＆nlE; x＆nlE ; 1，-0.2＆nlE; y＆nlE; 1.2，z≥0.4和0.5＆nlE;（x + y）/ z＆nlE; 3）。 该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。 还具体公开了一种薄膜晶体管，其特征在于包括氧化物半导体。

    Switching element
    6.
    发明申请
    Switching element 失效
    开关元件

    公开(公告)号：US20070063187A1

    公开(公告)日：2007-03-22

    申请号：US10545854

    申请日：2004-02-17

    申请人： Haruo Kawakami ,  Hisato Kato ,  Masami Kuroda ,  Nobuyuki Sekine ,  Keisuke Yamashiro

    发明人： Haruo Kawakami ,  Hisato Kato ,  Masami Kuroda ,  Nobuyuki Sekine ,  Keisuke Yamashiro

    IPC分类号： H01L29/08

    CPC分类号： G11C13/02 ,  C07D495/04 ,  H01L27/28 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0583

    摘要： The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

    摘要翻译： 本发明提供了具有稳定的双稳态特性和高跃迁电压的开关元件，并表现出优异的循环性能。 开关元件相对于施加在电极之间的电压具有两个稳定的电阻值，其中第一电极层，有机双稳态材料层和第二电极层在基板上依次形成为薄膜，并且构成有机双稳态材料的有机双稳态材料 有机双稳态材料层是基于喹啉的化合物或基于单甲基的化合物。 构成第二电极层的金属被扩散到有机双稳态材料层中。 优选通过气相沉积形成第二电极层，并且在气相沉积期间基板的温度为30-150℃。

    Switching element
    7.
    发明授权
    Switching element 失效
    开关元件

    公开(公告)号：US07807991B2

    公开(公告)日：2010-10-05

    申请号：US10558259

    申请日：2004-08-12

    申请人： Haruo Kawakami ,  Keisuke Yamashiro ,  Hisato Kato

    发明人： Haruo Kawakami ,  Keisuke Yamashiro ,  Hisato Kato

    IPC分类号： H01L45/00 ,  H01L51/30

    CPC分类号： H01L51/0065 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/56 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0591 ,  H01L51/0595

    摘要： A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticle and the organic bistable compound.

    摘要翻译： 具有双稳态特性的开关元件具有通过提高转换概率而稳定的开关特性。 开关元件在至少两个电极之间具有有机双稳态材料层。 有机双稳态材料层含有对施加电压具有两个稳定的电阻值的有机双稳态化合物，其中开关元件具有第一电极层，金属微粒含有层，有机双稳态材料层和第二电极的薄膜 层，在基板上依次形成，金属微粒含有层含有金属微粒和有机双稳态化合物。

    Switching device
    9.
    发明授权
    Switching device 有权
    开关装置

    公开(公告)号：US07623213B2

    公开(公告)日：2009-11-24

    申请号：US11444133

    申请日：2006-05-30

    申请人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    发明人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    IPC分类号： C09K19/02 ,  G02F1/1343 ,  H01L51/00

    CPC分类号： H01L51/0052 ,  B82Y10/00 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0591 ,  H01L51/0595

    摘要： A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

    摘要翻译： 一种开关装置，其中在至少两个电极之间设置有包含具有两种对施加电压的稳定电阻的有机双稳态化合物的有机双稳态材料层。 在开关装置中，在基板上顺序地形成第一电极层，电荷注入抑制层，有机双稳态材料层和第二电极层，作为各个薄膜，其中电荷注入抑制层含有导电 与从第一电极层直接注入到有机双稳态材料层的情况相比，允许从第一电极层到有机双稳态材料层的电荷注入量小的层，而不提供 电荷注入抑制层。