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    Process for producing thin film field-effect transistor
    3.
    发明授权
    Process for producing thin film field-effect transistor 有权
    薄膜场效应晶体管的制造方法

    公开(公告)号：US09385333B2

    公开(公告)日：2016-07-05

    申请号：US11991379

    申请日：2006-08-24

    申请人： Takahiko Maeda ,  Haruo Kawakami ,  Hisato Kato ,  Nobuyuki Sekine ,  Kyoko Kato

    发明人： Takahiko Maeda ,  Haruo Kawakami ,  Hisato Kato ,  Nobuyuki Sekine ,  Kyoko Kato

    IPC分类号： H01L51/05 ,  H01L51/10 ,  H01L51/00

    CPC分类号： H01L51/0545 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/105

    摘要： A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

    摘要翻译： 制造薄膜场效应晶体管的工艺包括提供栅电极，栅极绝缘膜以及源极和漏极，用硫酸和过氧化氢的混合物处理源极和漏极的整个表面，并提供 在栅极绝缘膜上含有有机电子材料的有机电子材料层与源极和漏极电接触。 含有有机电子材料的磺化产物的有机电子材料，硫酸和过氧化氢的反应产物仅存在于源电极和有机电子材料层之间的界面处，并且在漏电极和有机电子之间的界面 从而增加有机电子材料的导电性，并减少从源电极到有机电子材料的电荷注入阻挡层。

    Oxide Semiconductor, Thin-Film Transistor and Method for Producing the Same
    4.
    发明申请
    Oxide Semiconductor, Thin-Film Transistor and Method for Producing the Same 失效
    氧化物半导体，薄膜晶体管及其制造方法

    公开(公告)号：US20090289249A1

    公开(公告)日：2009-11-26

    申请号：US12086628

    申请日：2007-05-25

    申请人： Hisato Kato ,  Haruo Kawakami ,  Nobuyuki Sekine ,  Kyoko Kato

    发明人： Hisato Kato ,  Haruo Kawakami ,  Nobuyuki Sekine ,  Kyoko Kato

    IPC分类号： H01L29/22 ,  H01L21/36

    CPC分类号： H01L29/78693 ,  C01G19/006 ,  C01P2006/40 ,  H01L29/66969

    摘要： Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

    摘要翻译： 公开了具有非晶结构的氧化物半导体，其中实现了更高的迁移率和降低的载流子浓度。 还公开了薄膜晶体管，氧化物半导体的制造方法以及薄膜晶体管的制造方法。 具体公开的是氧化物半导体，其特征在于由以下通式表示的无定形氧化物：Inx + 1MZny + 1SnzO（4 + 1.5x + y + 2z）（其中M为Ga或Al，0 < x <= 1，-0.2 <= y <= 1.2，z> = 0.4和0.5 <=（x + y）/ z <= 3）。 该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。 还具体公开了一种薄膜晶体管，其特征在于包括氧化物半导体。

    Thin film field-effect transistor and process for producing the same
    5.
    发明申请
    Thin film field-effect transistor and process for producing the same 有权
    薄膜场效应晶体管及其制造方法

    公开(公告)号：US20090039342A1

    公开(公告)日：2009-02-12

    申请号：US11991379

    申请日：2006-08-24

    申请人： Takahiko Maeda ,  Haruo Kawakami ,  Hisato Kato ,  Nobuyuki Sekine ,  Kyoko Kato

    发明人： Takahiko Maeda ,  Haruo Kawakami ,  Hisato Kato ,  Nobuyuki Sekine ,  Kyoko Kato

    IPC分类号： H01L51/05 ,  H01L51/40

    CPC分类号： H01L51/0545 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/105

    摘要： Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length. Such a thin film field-effect transistor and a process for producing the same are provided that contains a substrate 10, a gate electrode 11, a gate insulating film 12 that is provided on the gate electrode, a source electrode 15 and a drain electrode 14 that are provided on the gate insulating film with a prescribed distance, and an organic electronic material layer 13 containing an organic electronic material that is provided on the gate insulating film and is in electrical contact with the source electrode and the drain electrode, with an acid, an acid derivative and/or a reaction product of an acid and the organic electronic material being present at least a part of an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer.

    摘要翻译： 提供这样的薄膜晶体管及其制造方法，其能够防止FET特性由于短的沟道长度而劣化。 提供这样的薄膜场效应晶体管及其制造方法，其包含基板10，栅极电极11，设置在栅电极上的栅极绝缘膜12，源极15和漏极14 设置在规定距离的栅极绝缘膜上的有机电子材料层13和含有设置在栅极绝缘膜上并与源电极和漏电极电接触的有机电子材料的有机电子材料层13与酸 ，酸和有机电子材料的酸衍生物和/或反应产物存在于源电极和有机电子材料层之间的界面的至少一部分以及漏电极和有机电子材料层之间的界面 。

    Oxide semiconductor, thin-film transistor and method for producing the same
    6.
    发明授权
    Oxide semiconductor, thin-film transistor and method for producing the same 失效
    氧化物半导体，薄膜晶体管及其制造方法

    公开(公告)号：US07807515B2

    公开(公告)日：2010-10-05

    申请号：US12086628

    申请日：2007-05-25

    申请人： Hisato Kato ,  Haruo Kawakami ,  Nobuyuki Sekine ,  Kyoko Kato

    发明人： Hisato Kato ,  Haruo Kawakami ,  Nobuyuki Sekine ,  Kyoko Kato

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/78693 ,  C01G19/006 ,  C01P2006/40 ,  H01L29/66969

    摘要： Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

    摘要翻译： 公开了具有非晶结构的氧化物半导体，其中实现了更高的迁移率和降低的载流子浓度。 还公开了薄膜晶体管，氧化物半导体的制造方法以及薄膜晶体管的制造方法。 具体公开了一种氧化物半导体，其特征在于由以下通式表示的无定形氧化物组成：Inx + 1MZny + 1SnzO（4 + 1.5x + y + 2z）（其中M为Ga或Al，0＆nlE; x＆nlE ; 1，-0.2＆nlE; y＆nlE; 1.2，z≥0.4和0.5＆nlE;（x + y）/ z＆nlE; 3）。 该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。 还具体公开了一种薄膜晶体管，其特征在于包括氧化物半导体。

    Switching device
    7.
    发明申请
    Switching device 有权

    公开(公告)号：US20060284155A1

    公开(公告)日：2006-12-21

    申请号：US11444133

    申请日：2006-05-30

    申请人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    发明人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    IPC分类号： H01L29/00

    CPC分类号： H01L51/0052 ,  B82Y10/00 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0591 ,  H01L51/0595

    摘要： A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

    Switching device
    8.
    发明授权
    Switching device 有权
    开关装置

    公开(公告)号：US07623213B2

    公开(公告)日：2009-11-24

    申请号：US11444133

    申请日：2006-05-30

    申请人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    发明人： Haruo Kawakami ,  Hisato Kato ,  Keisuke Yamashiro ,  Kyoko Kato

    IPC分类号： C09K19/02 ,  G02F1/1343 ,  H01L51/00

    CPC分类号： H01L51/0052 ,  B82Y10/00 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0591 ,  H01L51/0595

    摘要： A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

    摘要翻译： 一种开关装置，其中在至少两个电极之间设置有包含具有两种对施加电压的稳定电阻的有机双稳态化合物的有机双稳态材料层。 在开关装置中，在基板上顺序地形成第一电极层，电荷注入抑制层，有机双稳态材料层和第二电极层，作为各个薄膜，其中电荷注入抑制层含有导电 与从第一电极层直接注入到有机双稳态材料层的情况相比，允许从第一电极层到有机双稳态材料层的电荷注入量小的层，而不提供 电荷注入抑制层。