公开(公告)号：US5925473A

公开(公告)日：1999-07-20

申请号：US50953

申请日：1998-03-31

申请人： Haruyoshi Kuriyama ,  Hideki Suzuki ,  Shinichiro Fukui

发明人： Haruyoshi Kuriyama ,  Hideki Suzuki ,  Shinichiro Fukui

IPC分类号： B32B27/06 ,  B32B9/00 ,  B32B19/00

CPC分类号： B32B27/06

摘要： A radiation image storage panel having a stimulable phosphor layer and a protective film composed of a plastic material film and a coated layer of a fluororesin-containing resin composition containing light-scattering fine particles gives a radiographic image of improved quality.

摘要翻译： 具有可刺激的荧光体层和由塑料材料膜构成的保护膜和含有光散射微粒的含氟树脂的树脂组合物的涂层的放射线图像存储面板提供了质量提高的放射线图像。

公开(公告)号：US06670282B2

公开(公告)日：2003-12-30

申请号：US09954209

申请日：2001-09-18

申请人： Haruyoshi Kuriyama ,  Hiroyuki Kondo ,  Shouichi Onda ,  Kazukuni Hara

发明人： Haruyoshi Kuriyama ,  Hiroyuki Kondo ,  Shouichi Onda ,  Kazukuni Hara

IPC分类号： H01L2131

CPC分类号： C30B23/02 ,  C30B23/00 ,  C30B23/002 ,  C30B29/36 ,  Y10S438/909 ,  Y10S438/931

摘要： To produce a SiC crystal in a shape which is used as a wafer, a guide is disposed around a SiC crystal substrate so as to cover a peripheral portion of the SiC crystal substrate. Temperature of the guide may be made higher than the sublimation temperature of the SiC when a SiC crystal is disposed upon and caused to grow on the SiC crystal substrate, thereby controlling and restricting the SiC crystal growth in the direction of the guide. Additionally, when the guide is formed in a substantially hexagonal tube shape, the SiC crystal can be produced in a hexagonal pole shape. In this case, when alignment is made between each diagonal passing through a center of the hexagon shape of the guide and specific direction ( or of the SiC crystal substrate), the SiC crystal becomes aligned accordingly.

公开(公告)号：US06214108B1

公开(公告)日：2001-04-10

申请号：US09318646

申请日：1999-05-26

申请人： Atsuto Okamoto ,  Naohiro Sugiyama ,  Toshihiko Tani ,  Nobuo Kamiya ,  Hiroaki Wakayama ,  Yoshiaki Fukushima ,  Kazukuni Hara ,  Fusao Hirose ,  Shoichi Onda ,  Kunihiko Hara ,  Takashi Onoda ,  Haruyoshi Kuriyama ,  Takeshi Hasegawa

发明人： Atsuto Okamoto ,  Naohiro Sugiyama ,  Toshihiko Tani ,  Nobuo Kamiya ,  Hiroaki Wakayama ,  Yoshiaki Fukushima ,  Kazukuni Hara ,  Fusao Hirose ,  Shoichi Onda ,  Kunihiko Hara ,  Takashi Onoda ,  Haruyoshi Kuriyama ,  Takeshi Hasegawa

IPC分类号： C30B2502

CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

摘要： Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.

摘要翻译： 存在于碳化硅单晶中的微管缺陷在单晶内闭合。 在碳化硅单晶（SiC衬底）的表面上打开的微管缺陷的至少一部分用涂料密封。 然后进行热处理，以便用碳化硅蒸气使微管缺陷的内部饱和。 由此，存在于SiC衬底中的微管缺陷可以在SiC衬底内封闭，而不是在新生长的层中。 此外，通过预先使用超临界流体等，通过用碳化硅材料填充微管缺陷可以有效地关闭微管缺陷。

公开(公告)号：US5585879A

公开(公告)日：1996-12-17

申请号：US283150

申请日：1994-08-03

申请人： Toshiro Tahara ,  Yukio Sugita ,  Youichi Kimura ,  Kazuo Shiota ,  Haruyoshi Kuriyama

发明人： Toshiro Tahara ,  Yukio Sugita ,  Youichi Kimura ,  Kazuo Shiota ,  Haruyoshi Kuriyama

IPC分类号： G03B27/32 ,  G03B27/58 ,  G03D3/08 ,  G03D13/00 ,  H04N1/00 ,  H04N1/12

CPC分类号： H04N1/00259 ,  G03B27/32 ,  G03B27/587 ,  G03D13/003 ,  H04N1/00249 ,  H04N1/00275 ,  H04N1/00567 ,  H04N1/00588 ,  H04N1/00591 ,  H04N1/00602 ,  H04N1/00657 ,  H04N1/00665 ,  H04N1/00668 ,  H04N1/00679 ,  H04N1/121

摘要： In a photosensitive material processing apparatus, a photosensitive material taking on the form of a long strip is fed into a conveyance mechanism and conveyed in this form along a predetermined conveyance path. An exposure device, a reservoir section, a development processing section, and a cutter are located in the conveyance path. The exposure device carries out scanning exposing operations on the long strip of the photosensitive material and thereby forms latent images on the long strip of the photosensitive material. In the reservoir section, a looped portion for serving as a buffer for conveyance is formed in the long strip of the photosensitive material, on which the latent images have been formed. In the development processing section, development processing is carried out on the long strip of the photosensitive material, which is fed via the reservoir section. The cutter cuts the long strip of the photosensitive material, which has been subjected to the development processing, into sheets having a predetermined length.

摘要翻译： 在感光材料处理装置中，以长条形式的感光材料被输送到输送机构中，并沿着预定的输送路径以这种形式输送。 曝光装置，储存器部分，显影处理部分和切割器位于传送路径中。 曝光装置在感光材料的长条上执行扫描曝光操作，从而在感光材料的长条上形成潜像。 在储存器部分中，形成用于输送缓冲器的环形部分形成在其上形成有潜像的感光材料的长条中。 在显影处理部中，通过经由储存部供给的感光材料的长条进行显影处理。 切割器将经过显影处理的感光材料的长条切割成具有预定长度的片材。