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公开(公告)号:US20120276817A1
公开(公告)日:2012-11-01
申请号:US13095822
申请日:2011-04-27
申请人: Hassan G. Iravani , Kun Xu , Boguslaw A. Swedek , Ingemar Carlsson , Shih-Haur Shen , Wen-Chiang Tu , David Maxwell Gage , James C. Wang
发明人: Hassan G. Iravani , Kun Xu , Boguslaw A. Swedek , Ingemar Carlsson , Shih-Haur Shen , Wen-Chiang Tu , David Maxwell Gage , James C. Wang
IPC分类号: B24B1/00
CPC分类号: B24B37/00 , B24B49/105
摘要: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.
摘要翻译: 对基板进行化学机械抛光的方法包括:在抛光台处对基板上的金属层进行抛光,用涡流监视系统在抛光台上研磨抛光期间监测金属层的厚度,并且当涡流监视系统指示时停止抛光 金属层的残留物从下层移除,底层的顶表面被暴露。
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公开(公告)号:US20120276662A1
公开(公告)日:2012-11-01
申请号:US13095819
申请日:2011-04-27
申请人: Hassan G. Iravani , Kun Xu , Boguslaw A. Swedek , Ingemar Carlsson , Shih-Haur Shen , Wen-Chiang Tu , David Maxwell Gage
发明人: Hassan G. Iravani , Kun Xu , Boguslaw A. Swedek , Ingemar Carlsson , Shih-Haur Shen , Wen-Chiang Tu , David Maxwell Gage
IPC分类号: H01L21/66
CPC分类号: H01L22/26 , B24B37/013 , B24B49/105 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要: A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures applied by a carrier head to the substrate during polishing of the layer at the polishing station based on thickness measurements of the metal features from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal feature and a target profile.
摘要翻译: 用于化学机械研磨衬底的方法包括在抛光工位上使用涡流监测系统来研磨衬底上的层的多个离散分离的金属特征,以监测该层中的金属特征的厚度,以及控制由 基于来自涡流监视系统的金属特征的厚度测量,在抛光台处抛光层期间的载体头到达基板,以减少金属特征的预期厚度分布与目标轮廓之间的差异。
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公开(公告)号:US09073169B2
公开(公告)日:2015-07-07
申请号:US13223159
申请日:2011-08-31
申请人: Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人: Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号: G06F19/00 , H01L21/00 , B24B49/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B37/30 , B24B49/12 , G01B11/06
CPC分类号: B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要: A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译: 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间,用原位监测系统监测基底以产生测量序列。 测量被分组成组,每个组与衬底上的多个区域的不同区域相关联。 对于每个区域,基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力,至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。
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公开(公告)号:US20120064801A1
公开(公告)日:2012-03-15
申请号:US13223159
申请日:2011-08-31
申请人: Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人: Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号: B24B49/00
CPC分类号: B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要: A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译: 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间,用原位监测系统监测基底以产生测量序列。 测量被分组成组,每个组与衬底上的多个区域的不同区域相关联。 对于每个区域,基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力,至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。
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公开(公告)号:US20190389028A1
公开(公告)日:2019-12-26
申请号:US16440785
申请日:2019-06-13
申请人: Wei Lu , David Maxwell Gage , Harry Q. Lee , Kun Xu , Jimin Zhang
发明人: Wei Lu , David Maxwell Gage , Harry Q. Lee , Kun Xu , Jimin Zhang
IPC分类号: B24B37/005 , B24B37/27 , B24B49/10 , G01B7/06
摘要: A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.
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