公开(公告)号：US20120276817A1

公开(公告)日：2012-11-01

申请号：US13095822

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu ,  David Maxwell Gage ,  James C. Wang

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu ,  David Maxwell Gage ,  James C. Wang

IPC分类号： B24B1/00

CPC分类号： B24B37/00 ,  B24B49/105

摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.

摘要翻译： 对基板进行化学机械抛光的方法包括：在抛光台处对基板上的金属层进行抛光，用涡流监视系统在抛光台上研磨抛光期间监测金属层的厚度，并且当涡流监视系统指示时停止抛光 金属层的残留物从下层移除，底层的顶表面被暴露。

公开(公告)号：US20120276662A1

公开(公告)日：2012-11-01

申请号：US13095819

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu ,  David Maxwell Gage

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu ,  David Maxwell Gage

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  B24B37/013 ,  B24B49/105 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of chemical mechanical polishing a substrate includes polishing a plurality of discrete separated metal features of a layer on the substrate at a polishing station, using an eddy current monitoring system to monitor thickness of the metal features in the layer, and controlling pressures applied by a carrier head to the substrate during polishing of the layer at the polishing station based on thickness measurements of the metal features from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal feature and a target profile.

摘要翻译： 用于化学机械研磨衬底的方法包括在抛光工位上使用涡流监测系统来研磨衬底上的层的多个离散分离的金属特征，以监测该层中的金属特征的厚度，以及控制由 基于来自涡流监视系统的金属特征的厚度测量，在抛光台处抛光层期间的载体头到达基板，以减少金属特征的预期厚度分布与目标轮廓之间的差异。

公开(公告)号：US20120276661A1

公开(公告)日：2012-11-01

申请号：US13095818

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

IPC分类号： H01L21/66 ,  B24B51/00

CPC分类号： H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

摘要翻译： 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

公开(公告)号：US09023667B2

公开(公告)日：2015-05-05

申请号：US13095818

申请日：2011-04-27

申请人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

发明人： Hassan G. Iravani ,  Kun Xu ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Wen-Chiang Tu

IPC分类号： H01L21/66 ,  B24B51/00 ,  B24B49/10

CPC分类号： H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

摘要翻译： 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

公开(公告)号：US20130224890A1

公开(公告)日：2013-08-29

申请号：US13774843

申请日：2013-02-22

申请人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

摘要： A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

摘要翻译： 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。

公开(公告)号：US20140030956A1

公开(公告)日：2014-01-30

申请号：US13558140

申请日：2012-07-25

申请人： Jimin Zhang ,  Jose Salas-Vernis ,  Ingemar Carlsson ,  David H. Mai ,  Huyen Tran ,  Zhihong Wang ,  Wen-Chiang Tu ,  Stephen Jew ,  Boguslaw A. Swedek ,  Shih-Haur Shen ,  James C. Wang ,  Yen-Chu Yang

发明人： Jimin Zhang ,  Jose Salas-Vernis ,  Ingemar Carlsson ,  David H. Mai ,  Huyen Tran ,  Zhihong Wang ,  Wen-Chiang Tu ,  Stephen Jew ,  Boguslaw A. Swedek ,  Shih-Haur Shen ,  James C. Wang ,  Yen-Chu Yang

IPC分类号： B24B51/00

CPC分类号： B24B51/00 ,  B24B37/013

摘要： A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.

摘要翻译： 抛光方法包括将两个基板定位成与相同的抛光垫接触。 在开始抛光之前，当两个基板与抛光垫接触时，从原位监测系统产生两个起始值。 可以调整施加到一个基板的起始抛光时间或压力，使得两个基板具有更接近的端点条件。 在抛光期间，用原位监测系统监测两个基底以产生两个值序列，并且可以检测抛光终点，或者可以基于两个值序列来调整抛光参数。

公开(公告)号：US09073169B2

公开(公告)日：2015-07-07

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  G01B11/06

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US20120064801A1

公开(公告)日：2012-03-15

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US20120053717A1

公开(公告)日：2012-03-01

申请号：US12871714

申请日：2010-08-30

申请人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

发明人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

IPC分类号： G06F17/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

摘要翻译： 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

公开(公告)号：US08694144B2

公开(公告)日：2014-04-08

申请号：US12871714

申请日：2010-08-30

申请人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

发明人： Alain Duboust ,  Stephen Jew ,  David H. Mai ,  Huyen Tran ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang

IPC分类号： G06F19/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

摘要翻译： 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。