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公开(公告)号:US08711334B2
公开(公告)日:2014-04-29
申请号:US13000333
申请日:2009-06-18
申请人: Heinz Haas , Wojciech Giziewicz
发明人: Heinz Haas , Wojciech Giziewicz
IPC分类号: G01C3/08
CPC分类号: G01V8/10 , H01L31/02325 , H01L31/173
摘要: A light barrier comprising a semiconductor component (1) and to a method for detecting objects with a carrier (2), a semiconductor chip (4) which detects an electromagnetic radiation, a semiconductor chip (4) which emits an electromagnetic radiation, and a direction-selective element (5, 8), which delimits an angle range of the radiation which can be received by the detecting semiconductor chip (4) and/or of the radiation to be emitted by the emitting semiconductor chip (3), wherein a main radiation axis (V) of the radiation which can be received is tilted relative to a main radiation axis (U) of the radiation to be emitted.
摘要翻译: 一种包括半导体部件(1)的光栅和用于检测载体(2)的物体的方法,检测电磁辐射的半导体芯片(4),发射电磁辐射的半导体芯片(4)和 方向选择元件(5,8),其限定可由检测半导体芯片(4)接收的辐射和/或由发射半导体芯片(3)发射的辐射的角度范围,其中a 可以接收的辐射的主辐射轴线(V)相对于要发射的辐射的主辐射轴线(U)倾斜。
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公开(公告)号:US20110188025A1
公开(公告)日:2011-08-04
申请号:US13000333
申请日:2009-06-18
申请人: Heinz Haas , Wojciech Giziewicz
发明人: Heinz Haas , Wojciech Giziewicz
CPC分类号: G01V8/10 , H01L31/02325 , H01L31/173
摘要: A light barrier comprising a semiconductor component (1) and a method for detecting objects with a carrier (2), a semiconductor chip (4) which detects an electromagnetic radiation, a semiconductor chip (4) which emits an electromagnetic radiation, and a direction-selective element (5, 8), which delimits an angle range of the radiation which can be received by the detecting semiconductor chip (4) and/or of the radiation to be emitted by the emitting semiconductor chip (3), wherein a main radiation axis (V) of the radiation which can be received is tilted relative to a main radiation axis (U) of the radiation to be emitted.
摘要翻译: 包括半导体部件(1)的光栅和用于检测载体(2)的物体的方法,检测电磁辐射的半导体芯片(4),发射电磁辐射的半导体芯片(4)和方向 - 选择元件(5,8),其限定可由检测半导体芯片(4)接收的辐射和/或由发射半导体芯片(3)发射的辐射的角度范围,其中主体 可以接受的辐射的辐射轴线(V)相对于要发射的辐射的主辐射轴线(U)倾斜。
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公开(公告)号:US20070170476A1
公开(公告)日:2007-07-26
申请号:US11336012
申请日:2006-01-20
IPC分类号: H01L31/113
CPC分类号: H01L31/028 , H01L31/105 , Y02E10/547
摘要: A photodetector includes a substrate and a layer of Ge formed on the substrate. A plurality of n-type doped regions and a plurality of p-type doped regions are formed in Ge region. These doped regions formed an alternating pattern. Electrodes are formed on n-type doped regions and on the p-type doped regions. The utilization of transparent electrodes increases the sensitivity of the photodetector without impacting speed.
摘要翻译: 光电检测器包括基板和形成在基板上的Ge层。 在Ge区域中形成多个n型掺杂区域和多个p型掺杂区域。 这些掺杂区域形成交替图案。 电极形成在n型掺杂区域和p型掺杂区域上。 透明电极的利用增加了光电探测器的灵敏度,而不会影响速度。
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公开(公告)号:US07480430B2
公开(公告)日:2009-01-20
申请号:US11349761
申请日:2006-02-08
IPC分类号: G02B6/26
CPC分类号: H01L29/768
摘要: An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.
摘要翻译: 光波导结构包括从光源接收光信号的通气区域。 在透气区域的表面上形成光子晶体包层区域。 光子晶体覆盖区域将光信号限制在通气区域内,并且沿着轴向传播光信号,同时确保光信号的接近完全传输。
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公开(公告)号:US20070181915A1
公开(公告)日:2007-08-09
申请号:US11349761
申请日:2006-02-08
申请人: Sajan Saini , Jurgen Michel , Dong Pan , Wojciech Giziewicz , Lionel Kimerling
发明人: Sajan Saini , Jurgen Michel , Dong Pan , Wojciech Giziewicz , Lionel Kimerling
IPC分类号: H01L29/768
CPC分类号: H01L29/768
摘要: An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.
摘要翻译: 光波导结构包括从光源接收光信号的通气区域。 在透气区域的表面上形成光子晶体包层区域。 光子晶体覆盖区域将光信号限制在通气区域内,并且沿着轴向传播光信号,同时确保光信号的接近完全传输。
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公开(公告)号:US20070025405A1
公开(公告)日:2007-02-01
申请号:US11194343
申请日:2005-08-01
IPC分类号: H01S5/00
CPC分类号: H01S5/0262 , H01L25/167 , H01L2224/48091 , H01L2224/48137 , H01S5/02248 , H01S5/02284 , H01S5/0261 , H01S5/183 , H01S5/423 , H01L2924/00014
摘要: A bidirectional transceiver assembly includes a VCSEL structure that emits light at a defined wavelength on a substrate structure. A photodetector receives the light. A hole structure is formed on the substrate structure to allow the light from the VCSEL structure to be emitted so as to form an optical path.
摘要翻译: 双向收发器组件包括在衬底结构上以限定的波长发射光的VCSEL结构。 光电检测器接收光。 在衬底结构上形成孔结构以允许来自VCSEL结构的光被发射以形成光路。
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