公开(公告)号：US08288756B2

公开(公告)日：2012-10-16

申请号：US11948235

申请日：2007-11-30

Applicant: Hemant Adhikari ,  Rusty Harris

Inventor： Hemant Adhikari ,  Rusty Harris

IPC: H01L29/06 ,  H01L29/04

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/7853 ,  H01L29/78687

Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.

Abstract translation: 本发明提供一种形成晶体管的方法。 该方法包括在绝缘层上形成第一半导体材料的第一层。 选择第一半导体材料以向第一载体类型提供高迁移率。 该方法还包括在第一半导体材料层之上形成第二半导体材料的第二层。 选择第二半导体材料以向与第一载体类型相反的第二载体类型提供高迁移率。 该方法还包括形成邻近第二层的第一掩蔽层，并通过第一掩蔽层蚀刻第二层，以在第二层中形成至少一个特征。 第二层中的每个特征形成具有第二层的一部分的倒T形。

公开(公告)号：US08815658B2

公开(公告)日：2014-08-26

申请号：US13584673

申请日：2012-08-13

Applicant: Hemant Adhikari ,  Rusty Harris

Inventor： Hemant Adhikari ,  Rusty Harris

IPC: H01L21/338 ,  H01L21/8234

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/7853 ,  H01L29/78687

Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.

Abstract translation: 本发明提供一种形成晶体管的方法。 该方法包括在绝缘层上形成第一半导体材料的第一层。 选择第一半导体材料以向第一载体类型提供高迁移率。 该方法还包括在第一半导体材料层之上形成第二半导体材料的第二层。 选择第二半导体材料以向与第一载体类型相反的第二载体类型提供高迁移率。 该方法还包括形成邻近第二层的第一掩蔽层，并通过第一掩蔽层蚀刻第二层，以在第二层中形成至少一个特征。 第二层中的每个特征形成具有第二层的一部分的倒T形。

公开(公告)号：US20120309141A1

公开(公告)日：2012-12-06

申请号：US13584673

申请日：2012-08-13

Applicant: Hemant Adhikari ,  Rusty Harris

Inventor： Hemant Adhikari ,  Rusty Harris

IPC: H01L21/335

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/7853 ,  H01L29/78687

Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.

Abstract translation: 本发明提供一种形成晶体管的方法。 该方法包括在绝缘层上形成第一半导体材料的第一层。 选择第一半导体材料以向第一载体类型提供高迁移率。 该方法还包括在第一半导体材料层之上形成第二半导体材料的第二层。 选择第二半导体材料以向与第一载体类型相反的第二载体类型提供高迁移率。 该方法还包括形成邻近第二层的第一掩蔽层，并通过第一掩蔽层蚀刻第二层，以在第二层中形成至少一个特征。 第二层中的每个特征形成具有第二层的一部分的倒T形。

公开(公告)号：US20090039441A1

公开(公告)日：2009-02-12

申请号：US11837161

申请日：2007-08-10

Applicant: Hongfa Luna ,  Kisik Choi ,  Prashant Majhi ,  Husam Alshareef ,  Huang-Chun Wen ,  Rusty Harris ,  Byoung Hun Lee

Inventor： Hongfa Luna ,  Kisik Choi ,  Prashant Majhi ,  Husam Alshareef ,  Huang-Chun Wen ,  Rusty Harris ,  Byoung Hun Lee

IPC: H01L27/08 ,  H01L21/8238

CPC classification number: H01L21/823842 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517

Abstract: Devices comprising, and method for fabricating, a MOSFET with a metal gate electrode are disclosed. In one embodiment, the MOSFET includes a first doped region configured to receive current from a current source, a second doped region configured to drain current from the first doped region when an electric field is modified between the first doped region and the second doped region, and a gate electrode configured to modify the electric field. The gate electrode may include a high-k layer, a hafnium-based metal layer formed above the high-k layer, and a polysilicon layer formed above the hafnium-based metal layer. In a further embodiment, the gate electrode further comprises a titanium-based metal layer formed between the hafnium-based metal layer and the polysilicon layer.

Abstract translation: 公开了包括用于制造具有金属栅电极的MOSFET的器件及其制造方法。 在一个实施例中，MOSFET包括被配置为从电流源接收电流的第一掺杂区域，被配置为当在第一掺杂区域和第二掺杂区域之间修改电场时从第一掺杂区域漏极电流的第二掺杂区域， 以及构造成修改电场的栅电极。 栅电极可以包括形成在高k层上方的高k层，铪基金属层和形成在铪基金属层上方的多晶硅层。 在另一实施例中，栅电极还包括在铪基金属层和多晶硅层之间形成的钛基金属层。