公开(公告)号：US20180226243A1

公开(公告)日：2018-08-09

申请号：US15506483

申请日：2015-09-03

Applicant: Hemlock Semiconductor Corporation

Inventor： Jason L. Giardina ,  James C. Mundell ,  Nathaniel C. McIntee-Chmielewski

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  B08B3/14 ,  B08B3/08 ,  C30B35/00 ,  C30B29/06

CPC classification number: H01L21/02079 ,  B08B3/08 ,  B08B3/14 ,  C30B29/06 ,  C30B35/007 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67721 ,  H01L21/67784 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.

公开(公告)号：US10431447B2

公开(公告)日：2019-10-01

申请号：US15506483

申请日：2015-09-03

Applicant: Hemlock Semiconductor Corporation

Inventor： Jason L. Giardina ,  James C. Mundell ,  Nathaniel C. McIntee-Chmielewski

IPC: H01L21/02 ,  H01L23/48 ,  H01L21/67 ,  H01L21/677 ,  B08B3/08 ,  B08B3/14 ,  C30B29/06 ,  C30B35/00

Abstract: A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.