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    Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
    2.
    发明授权
    Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof 有权
    具有集成端耦合波导的蚀刻面半导体光学部件及其制造和使用方法

    公开(公告)号：US07599585B2

    公开(公告)日：2009-10-06

    申请号：US11765134

    申请日：2007-06-19

    申请人： Henry A. Blauvelt ,  David W. Vernooy ,  Joel S. Paslaski ,  Charles I. Grosjean ,  Hao Lee ,  Franklin G. Monzon ,  Katrina H. Nguyen

    发明人： Henry A. Blauvelt ,  David W. Vernooy ,  Joel S. Paslaski ,  Charles I. Grosjean ,  Hao Lee ,  Franklin G. Monzon ,  Katrina H. Nguyen

    IPC分类号： G02B6/00 ,  G02B6/12 ,  G02B6/13

    CPC分类号： H01S5/026 ,  G02B6/132 ,  G02B6/4204 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/141

    摘要： An optical apparatus comprises: a semiconductor substrate; a semiconductor optical device integrally formed on the substrate and having a device end face; and a low-index planar optical waveguide integrally formed on the semiconductor substrate at the device end face. The waveguide is end-coupled at its proximal end to the optical device through the device end face and is arranged so as to comprise a waveguide mode converter. The waveguide is arranged at its distal end to transmit or receive an optical signal through its distal end to or from another low-index optical waveguide end-coupled with the integrally-formed waveguide and assembled with the integrally-formed waveguide, optical device, or substrate. The optical apparatus can further comprise a discrete low-index optical waveguide assembled with the integrally-formed waveguide, optical device, or substrate so as to be end-coupled with the integrally-formed waveguide at its distal end.

    摘要翻译： 光学装置包括：半导体衬底; 整体地形成在所述基板上并具有器件端面的半导体光学器件; 以及在器件端面上一体地形成在半导体衬底上的低折射率平面光波导。 波导在其近端处通过器件端面端接到光学器件，并且被布置成包括波导模式转换器。 波导布置在其远端处，以将光信号通过其远端传输或接收到与整体形成的波导端连接的另一个低折射率光波导，或者与一体形成的波导，光学器件或 基质。 光学装置还可以包括与整体形成的波导，光学器件或衬底组装的离散低折射率光波导，以便在其远端处与整体形成的波导端部耦合。

    Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
    3.
    发明授权
    Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof 有权
    具有集成端耦合波导的蚀刻面半导体光学部件及其制造和使用方法

    公开(公告)号：US06985646B2

    公开(公告)日：2006-01-10

    申请号：US10759858

    申请日：2004-01-16

    申请人： Henry A. Blauvelt ,  David W. Vernooy ,  Joel S. Paslaski ,  Charles I. Grosjean ,  Hao Lee ,  Franklin G. Monzon ,  Katrina H. Nguyen

    发明人： Henry A. Blauvelt ,  David W. Vernooy ,  Joel S. Paslaski ,  Charles I. Grosjean ,  Hao Lee ,  Franklin G. Monzon ,  Katrina H. Nguyen

    IPC分类号： G02B6/00 ,  G02B6/12 ,  G02B6/13

    CPC分类号： H01S5/026 ,  G02B6/132 ,  G02B6/4204 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/141

    摘要： An optical apparatus comprises a semiconductor optical device waveguide formed on a semiconductor substrate, and an integrated end-coupled waveguide formed on the semiconductor substrate. The integrated waveguide may comprise materials differing from those of the device waveguide and the substrate. Spatially selective material processing may be employed for first forming the optical device waveguide on the substrate, and for subsequently depositing and forming the integrated end-coupled waveguide on the substrate. Spatially selective material processing enables accurate spatial mode matching and transverse alignment of the waveguides, and multiple device waveguides and corresponding integrated end-coupled waveguides may be fabricated concurrently on a common substrate on a wafer scale. The integrated end-coupled waveguide may be adapted for fulfilling one or more functions, and the device waveguide and/or integrated waveguide and/or spatially selective material processing steps may be adapted in a variety of ways for achieving the needed/desired degree of end-coupling.

    摘要翻译： 光学装置包括形成在半导体衬底上的半导体光学器件波导和形成在半导体衬底上的集成端耦合波导。 集成波导可以包括与器件波导和衬底不同的材料。 可以采用空间选择性材料处理来首先在衬底上形成光学器件波导，并且用于随后在衬底上沉积和形成集成的端部耦合波导。 空间选择性材料处理可实现波导的精确的空间模式匹配和横向对准，并且多个器件波导和相应的集成端耦合波导可以在晶片规模上的公共衬底上同时制造。 集成端耦合波导可以适于实现一个或多个功能，并且器件波导和/或集成波导和/或空间选择性材料处理步骤可以以各种方式进行调整，以实现所需/期望的结束度 -耦合。

    Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
    4.
    发明授权
    Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof 有权
    具有集成端耦合波导的蚀刻面半导体光学部件及其制造和使用方法

    公开(公告)号：US07233713B2

    公开(公告)日：2007-06-19

    申请号：US11328406

    申请日：2006-01-09

    申请人： Henry A. Blauvelt ,  David W. Vernooy ,  Joel S. Paslaski ,  Charles I. Grosjean ,  Hao Lee ,  Franklin G. Monzon ,  Katrina H. Nguyen

    发明人： Henry A. Blauvelt ,  David W. Vernooy ,  Joel S. Paslaski ,  Charles I. Grosjean ,  Hao Lee ,  Franklin G. Monzon ,  Katrina H. Nguyen

    IPC分类号： G02B6/00 ,  G02B6/12 ,  G02B6/13

    CPC分类号： H01S5/026 ,  G02B6/132 ,  G02B6/4204 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/141

    摘要： An optical apparatus comprises a semiconductor optical device waveguide formed on a semiconductor substrate, and an integrated end-coupled waveguide formed on the semiconductor substrate. The integrated waveguide may comprise materials differing from those of the device waveguide and the substrate. Spatially selective material processing may be employed for first forming the optical device waveguide on the substrate, and for subsequently depositing and forming the integrated end-coupled waveguide on the substrate. Spatially selective material processing enables accurate spatial mode matching and transverse alignment of the waveguides, and multiple device waveguides and corresponding integrated end-coupled waveguides may be fabricated concurrently on a common substrate on a wafer scale. The integrated end-coupled waveguide may be adapted for fulfilling one or more functions, and the device waveguide and/or integrated waveguide and/or spatially selective material processing steps may be adapted in a variety of ways for achieving the needed/desired degree of end-coupling.

    摘要翻译： 光学装置包括形成在半导体衬底上的半导体光学器件波导和形成在半导体衬底上的集成端耦合波导。 集成波导可以包括与器件波导和衬底不同的材料。 可以采用空间选择性材料处理来首先在衬底上形成光学器件波导，并且用于随后在衬底上沉积和形成集成的端部耦合波导。 空间选择性材料处理可实现波导的精确的空间模式匹配和横向对准，并且多个器件波导和相应的集成端耦合波导可以在晶片规模上的公共衬底上同时制造。 集成端耦合波导可以适于实现一个或多个功能，并且器件波导和/或集成波导和/或空间选择性材料处理步骤可以以各种方式进行调整，以实现所需/期望的结束度 -耦合。

    Process for local on-chip cooling of semiconductor devices using buried microchannels
    7.
    发明授权
    Process for local on-chip cooling of semiconductor devices using buried microchannels 失效
    使用埋入微通道的半导体器件局部片上冷却的工艺

    公开(公告)号：US06521516B2

    公开(公告)日：2003-02-18

    申请号：US09895136

    申请日：2001-06-29

    申请人： Franklin G. Monzon ,  Prateek Dujari ,  Bin Lian

    发明人： Franklin G. Monzon ,  Prateek Dujari ,  Bin Lian

    IPC分类号： H01L21425

    CPC分类号： H01L23/473 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method and apparatus comprising using buried microchannels to cool specific areas of a substrate over which high heat generating elements of integrated circuits, circuits or devices are processed is disclosed. In one embodiment of the method and apparatus comprise running a cooling fluid thorough a buried microchannel under a heat generating element to locally cool the substrate.

    摘要翻译： 公开了一种方法和装置，其包括使用掩埋微通道来冷却集成电路，电路或器件的高发热元件被处理的衬底的特定区域。 在该方法和设备的一个实施例中，包括通过发热元件下面的埋入微通道运行冷却流体以局部冷却基板。

    Displacement transducer utilizing miniaturized magnet and hall junction
    8.
    发明授权
    Displacement transducer utilizing miniaturized magnet and hall junction 失效
    位移传感器采用小型化磁铁和霍尔接头

    公开(公告)号：US06593731B1

    公开(公告)日：2003-07-15

    申请号：US09612828

    申请日：2000-07-07

    申请人： Michael L. Roukes ,  Franklin G. Monzon ,  Michael J. Murphy

    发明人： Michael L. Roukes ,  Franklin G. Monzon ,  Michael J. Murphy

    IPC分类号： G01B714

    CPC分类号： G01D5/145

    摘要： A displacement transducer in which relative displacement between a magnet and a Hall junction is sensed. Magnetic flux from the magnet is linked to the Hall junction in a direction perpendicular to the flow of current through the Hall junction. Relative displacement between the magnet and the Hall junction causes a change in the magnetic flux linked to the Hall junction which in turn causes a change in transverse voltage across the Hall junction. A signal representative of this voltage change is output from the transducer. The transducer may be part of a NEMS or MEMS.

    摘要翻译： 一种位移传感器，其中检测到磁体和霍尔结之间的相对位移。 来自磁体的磁通量与垂直于通过霍尔连接点的电流的方向连接到霍尔接头。 磁体和霍尔连接点之间的相对位移导致与霍尔连接点相关联的磁通量的变化，这又导致霍尔连接点上横向电压的变化。 代表该电压变化的信号从换能器输出。 传感器可以是NEMS或MEMS的一部分。