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    Method of fabricating patterned CZT and CdTe devices
    3.
    发明授权
    Method of fabricating patterned CZT and CdTe devices 有权
    制造图案化CZT和CdTe器件的方法

    公开(公告)号：US08476101B2

    公开(公告)日：2013-07-02

    申请号：US12654646

    申请日：2009-12-28

    申请人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

    发明人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1804 ,  H01L31/02966 ,  H01L31/085 ,  Y02E10/547

    摘要： A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

    摘要翻译： 制造半导体辐射检测器的方法包括以下步骤：提供具有前和后主要相对表面的半导体衬底，在后主表面上形成焊接掩模层，将焊接掩模层图案化成多个像素分离区域，之后 图案化焊料掩模层的步骤，在后主表面上形成阳极像素。 每个阳极像素形成在相邻像素分离区域之间，阴极电极位于衬底的前主表面上方。 焊接掩模可以用作CdZnTe / CdTe器件上的图案化电极中的永久性光刻胶，以及永久可靠性保护涂层。 该方法非常强大，确保了长期的可靠性，出色的检测器性能，可用于医疗成像和苛刻的其他高光谱应用。

    Solid-state radiation detector with improved sensitivity
    4.
    发明授权
    Solid-state radiation detector with improved sensitivity 有权
    固态放射线检测器灵敏度提高

    公开(公告)号：US08614423B2

    公开(公告)日：2013-12-24

    申请号：US12364042

    申请日：2009-02-02

    申请人： Henry Chen ,  Salah Awadalla ,  Pinghe Lu ,  Pramodha Marthandam

    发明人： Henry Chen ,  Salah Awadalla ,  Pinghe Lu ,  Pramodha Marthandam

    IPC分类号： G01T1/24 ,  H01L27/146

    CPC分类号： H01L31/085 ,  H01L27/14618 ,  H01L27/14658 ,  H01L31/0224 ,  H01L31/1832 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

    摘要翻译： 辐射检测器包括具有相对的前表面和后表面的半导体衬底，位于半导体衬底的前表面上以便接收辐射的阴极，以及形成在所述半导体衬底的后表面上的多个阳极。 与半导体基板的前表面接触的阴极电极的功函数低于与半导体基板的背面接触的阳极电极材料的功函数。

    Method of fabricating patterned CZT and CdTe devices
    5.
    发明申请
    Method of fabricating patterned CZT and CdTe devices 有权
    制造图案化CZT和CdTe器件的方法

    公开(公告)号：US20110156198A1

    公开(公告)日：2011-06-30

    申请号：US12654646

    申请日：2009-12-28

    申请人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

    发明人： Henry Chen ,  Pramodha Marthandam ,  Salah Awadalla ,  Pinghe Lu

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/02966 ,  H01L31/085 ,  Y02E10/547

    摘要： A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

    摘要翻译： 制造半导体辐射检测器的方法包括以下步骤：提供具有前和后主要相对表面的半导体衬底，在后主表面上形成焊接掩模层，将焊接掩模层图案化成多个像素分离区域，之后 图案化焊料掩模层的步骤，在后主表面上形成阳极像素。 每个阳极像素形成在相邻像素分离区域之间，阴极电极位于衬底的前主表面上方。 焊接掩模可以用作CdZnTe / CdTe器件上的图案化电极中的永久性光刻胶，以及永久可靠性保护涂层。 该方法非常强大，确保了长期的可靠性，出色的检测器性能，可用于医疗成像和苛刻的其他高光谱应用。

    SIDE SHIELDING CATHODE DESIGN FOR A RADIATION DETECTOR WITH IMPROVED EFFICIENCY
    8.
    发明申请
    SIDE SHIELDING CATHODE DESIGN FOR A RADIATION DETECTOR WITH IMPROVED EFFICIENCY 审中-公开
    具有改进效率的辐射探测器的侧面遮蔽阴极设计

    公开(公告)号：US20120267737A1

    公开(公告)日：2012-10-25

    申请号：US13451670

    申请日：2012-04-20

    申请人： Henry Chen ,  Salah Awadalla ,  Pramodha Marthandam

    发明人： Henry Chen ,  Salah Awadalla ,  Pramodha Marthandam

    IPC分类号： H01L31/08 ,  H01L31/18

    CPC分类号： H01L31/085 ,  H01L27/14683 ,  H01L31/0224 ,  H01L31/1828 ,  Y02E10/543

    摘要： A radiation detector includes a semiconductor substrate which contains front and rear major surfaces and at least one side surface, a guard ring and a plurality of anode electrode pixels located over the rear surface of the semiconductor substrate, where each anode electrode pixel is formed between adjacent pixel separation regions, a side insulating layer formed on the at least one side surface of the semiconductor substrate, a cathode electrode located over the front major surface of the semiconductor substrate, and an electrically conductive cathode extension formed over at least a portion of side insulating layer, where the cathode extension contacts an edge of the cathode electrode. Further embodiments include various methods of making such semiconductor radiation detector.

    摘要翻译： 辐射检测器包括半导体衬底，其包含前后主表面和至少一个侧表面，保护环和位于半导体衬底的后表面上方的多个阳极电极像素，其中每个阳极电极像素形成在相邻 像素分离区域，形成在半导体衬底的至少一个侧表面上的侧绝缘层，位于半导体衬底的前主表面上方的阴极电极和形成在侧绝缘层的至少一部分侧壁上的导电阴极延伸部 其中阴极延伸部接触阴极电极的边缘。 另外的实施例包括制造这种半导体辐射检测器的各种方法。

    Segmented radiation detector with side shielding cathode
    10.
    发明授权
    Segmented radiation detector with side shielding cathode 有权
    带侧面屏蔽阴极的分段辐射探测器

    公开(公告)号：US07223982B1

    公开(公告)日：2007-05-29

    申请号：US11527707

    申请日：2006-09-27

    申请人： Henry Chen ,  Salah Awadalla

    发明人： Henry Chen ,  Salah Awadalla

    IPC分类号： G01T1/24

    CPC分类号： G01T1/2928 ,  H01L27/14676 ,  H01L27/14696 ,  H01L31/085 ,  H01L31/1828 ,  H01L2924/0002 ,  Y02E10/543 ,  Y02P70/521 ,  H01L2924/00

    摘要： A semiconductor radiation detector is provided for improved performance of pixels at the outer region of the crystal tile. The detector includes a semiconductor single crystal substrate with two major planar opposing surfaces separated by a substrate thickness. A cathode electrode covers one of the major surfaces extending around the sides of the substrate a fraction of the substrate thickness and insulated on the side portions by an insulating encapsulant. An exemplary example is given using Cadmium Zinc Telluride semiconductor, gold electrodes, and Humiseal encapsulant, with the side portions of the cathode extending approximately 40-60 percent of the substrate thickness. The example with CZT allows use of monolithic CZT detectors in X-ray and Gamma-ray applications at high bias voltage. The shielding electrode design is demonstrated to significantly improve gamma radiation detection of outer pixels of the array, including energy resolution and photopeak counting efficiency. The detector has performance of detector leakage current density less than 6 nA/mm2 at a bias potential of substantially 1400V, and responsive to gamma radiation such that the energy resolution full width half maximum of more than 90% of the pixels is less than 6%.

    摘要翻译： 提供半导体辐射检测器用于改善水晶砖外部区域的像素性能。 检测器包括半导体单晶基板，其具有由基板厚度分开的两个主平面相对表面。 阴极电极覆盖围绕基板的侧面延伸的主要表面之一，其中一部分基板厚度并且通过绝缘密封剂在侧部上绝缘。 使用碲化锌碲化物半导体，金电极和Humiseal密封剂给出示例性实例，阴极的侧部延伸大约40-60％的衬底厚度。 CZT的例子允许在高偏压下在X射线和γ射线应用中使用单片CZT检测器。 证明屏蔽电极设计可显着改善阵列外部像素的伽马辐射检测，包括能量分辨率和光峰计数效率。 检测器具有在基本上为1400V的偏置电位下的检测器漏电流密度小于6nA / mm 2的性能，并且响应于γ辐射使得能量分辨率全宽度半值大于90％ 的像素小于6％。