摘要:
A memory address generator having a small chip area, a method for generating a memory address and a SRAM built-in self test (BIST) circuit using the same are described. When the number of addresses of a memory to be tested is 2.sup.n, where n is the number of bits in an address, the address generator includes an up counter for generating a first address of a series of sequentially increasing addresses, and an inverter for inverting the first address to generate a second address of a series of sequentially decreasing addresses. The address generator also includes a selector for selecting one of the first and second addresses, in response to a control signal, to output the selected address as an address of the memory. When the number of addresses of the memory to be tested is not 2.sup.n, the address generator includes an up counter for generating a first address of a series of sequentially increasing addresses up to a maximum address of the memory and a subtracter for subtracting the first address from the maximum address to generate a second address of a series of sequentially decreasing addresses. The address generator also includes a selector for selecting one of the first and second addresses, in response to control signal, to output the selected address as an address of the memory.
摘要:
Integrated circuit devices have a self-test capability in which a sequence of input data patterns are generated by a test pattern unit and are selectively applied to a functional or test block that is selected from a plurality of potential test blocks. The output data patterns that are generated by the selected test block are provided to a data compression unit that generates a signature in response thereto. This signature can then be compared with an expected pattern to determine whether the selected test block is functioning properly. Because the test pattern unit and the data compression unit are shared by a plurality of test blocks, the area normally reserved for test circuitry in an integrated circuit device can be reduced.
摘要:
The present invention provides a test method of SOA (Single-Order Addressed) memory utilizing address data backgrounds applied to memory circuits. A memory test operation is performed using a total of (log.sub.2 N+1) address data backgrounds on an SOA memory having N mutually different addresses. Each address data background is written and read, then the inversion is written and read. Finally the address data background is again written and read for a total of 6 N(log.sub.2 N+1) operations.
摘要:
A memory address generating apparatus and method of a dynamic memory testing circuit for generating addresses for testing a dynamic memory which uses all the available addresses of the dynamic memory, which does not use the most significant addresses, and which does not use middle addresses among all the available addresses are provided. The address generator can obtain an up-counted address by up counting the addresses used by the dynamic memory. It can obtain a down-counted address by inverting the N-bit up-counted value, or by subtracting the N-bit up-counted value from the maximum address, or by combining the inverted MSB portion of the N-bit up-counted value with the LSB portion of the N-bit up-counted value subtracted from the LSB portion of the maximum address used in the dynamic memory. The down and up counted addresses are used as addresses for selectively testing the dynamic memory according to a selected testing method.
摘要:
A serial memory interface includes a register having a plurality of flip-flops forming a scan chain and coupled to both the input and output terminals of memory cells. An interlaced scan is established by interconnecting scan chains between multiple memory blocks. The interface structure provides a means for efficiently performing a built-in self test of an embedded memory while requiring minimal overhead in hardware structure.