利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.022 秒)

    Semiconductor devices and methods of forming the same
    6.
    发明授权
    Semiconductor devices and methods of forming the same 有权

    公开(公告)号：US09905468B2

    公开(公告)日：2018-02-27

    申请号：US15061200

    申请日：2016-03-04

    申请人： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

    发明人： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/823431 ,  H01L21/823481

    摘要： Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

    Semiconductor device and method of fabricating the same
    7.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US09679815B2

    公开(公告)日：2017-06-13

    申请号：US15050505

    申请日：2016-02-23

    申请人： Dong Hun Lee ,  Sunhom Steve Paak

    发明人： Dong Hun Lee ,  Sunhom Steve Paak

    IPC分类号： H01L21/30 ,  H01L21/8234 ,  H01L21/308 ,  H01L27/11

    CPC分类号： H01L21/823431 ,  H01L21/3086 ,  H01L27/1104

    摘要： A semiconductor device fabrication method includes sequentially forming a hard mask layer and a sacrificial layer on a substrate, forming an upper mandrel which includes first to third upper sub-mandrels on the sacrificial layer, the first to third upper sub-mandrels extending in a first direction and being spaced apart from each other in a second direction, a width of the first upper sub-mandrel being smaller than widths of the second and third upper sub-mandrels, forming first spacers on sidewalls of each of the upper sub-mandrels, removing the upper mandrel, etching the sacrificial layer using the first spacers as etching masks to form a lower mandrel that includes a plurality of sub-mandrels, forming second spacers on sidewalls of the lower sub-mandrels, removing the lower mandrel, patterning the hard mask layer and the substrate using the second spacers as etching masks to form first to tenth fins which extend alongside each other in the first direction and are spaced apart from each other in the second direction, removing the first, second, fifth and eighth fins, and forming a first gate electrode that intersects the third, fourth, sixth and seventh fins, and a second gate electrode that intersects the sixth, seventh, ninth and tenth fins while not intersecting the third and fourth fins.

    SEMICONDUCTOR DEVICE INCLUDING ACTIVE FIN
    9.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING ACTIVE FIN 审中-公开
    包括有源FIN的半导体器件

    公开(公告)号：US20160276482A1

    公开(公告)日：2016-09-22

    申请号：US15060265

    申请日：2016-03-03

    申请人： Sung-Min Kim ,  Dong-Ho Cha ,  Sunhom Steve Paak

    发明人： Sung-Min Kim ,  Dong-Ho Cha ,  Sunhom Steve Paak

    IPC分类号： H01L29/78 ,  H01L27/092 ,  H01L27/11

    CPC分类号： H01L29/7848 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/165

    摘要： A semiconductor device includes first through fourth active fins, which extend alongside one another in a first direction; and a field insulating film that covers lower portions of the first through fourth active fins, the first and second active fins protrude from the field insulating film at a first height, the third active fin protrudes from the field insulating film at a second height different from the first height, and an interval between the first and second active fins is different from an interval between the third and fourth active fins.

    摘要翻译： 半导体器件包括在第一方向上彼此并列延伸的第一至第四活性鳍片; 以及覆盖所述第一至第四活性鳍片的下部的场绝缘膜，所述第一和第二活性鳍片在所述场绝缘膜处以第一高度突出，所述第三活性鳍片从所述场绝缘膜突出，所述第二高度不同于 第一高度以及第一和第二活动翅片之间的间隔与第三和第四活动翅片之间的间隔不同。