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1.发明授权Lock in thermal laser stimulation through one side of the device while acquiring lock-in thermal emission images on the opposite side 有权通过设备的一侧锁定热激光刺激，同时在相对侧获取锁定热发射图像公开(公告)号：US09025020B2
公开(公告)日：2015-05-05
申请号：US13280260
申请日：2011-10-24
CPC分类号： G06T7/0008 , G01J5/0096 , G01J2005/0077 , G01N25/72 , G01R31/311 , G01R35/005 , G06T7/001 , G06T2207/10048 , G06T2207/30148 , H04N5/33
摘要： Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.
摘要翻译： 使用光束将控制的热量注入到堆叠的管芯中，并且利用LIT照相机从模具的另一侧测量传播的热量。 获得的热图像可以被表征，使得其可以用于校准来自给定堆叠层的相移，或者可以用于识别堆叠管芯中的缺陷。 堆叠中的每个管芯可以重复该过程，以生成未来测试的参考。 可以研究热图像以检测故障，例如通孔中的空隙，例如TSV。
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公开(公告)号：US08742347B2
公开(公告)日：2014-06-03
申请号：US13156289
申请日：2011-06-08
CPC分类号： G01J5/0066 , G01J2005/0077 , G01J2005/0085 , G01N1/00 , G01N21/35 , G01N21/88 , G01N25/00 , G01N2021/8461 , G01R31/311
摘要： A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.
摘要翻译： 通过使用锁定热成像（LIT）在电子设备架构中对埋藏热点的3D定位的非破坏性方法。 3D分析基于通过不同材料层的热波传播的原理以及由此产生的相移/热时间延迟。 使用更复杂的多级堆叠管芯结构，需要在不同的激发频率下获取多个LIT结果，以实现精确的热点深度定位。 此外，可以使用在热点位置顶部的最小视场内测量的多个时间分辨热波形来加速数据采集。 可以分析所得波形的形状，以进一步提高检测精度和置信度。
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公开(公告)号：US20110297829A1
公开(公告)日：2011-12-08
申请号：US13156289
申请日：2011-06-08
CPC分类号： G01J5/0066 , G01J2005/0077 , G01J2005/0085 , G01N1/00 , G01N21/35 , G01N21/88 , G01N25/00 , G01N2021/8461 , G01R31/311
摘要： A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.
摘要翻译： 通过使用锁定热成像（LIT）在电子设备架构中对埋藏热点的3D定位的非破坏性方法。 3D分析基于通过不同材料层的热波传播的原理以及由此产生的相移/热时间延迟。 使用更复杂的多级堆叠管芯结构，需要在不同的激发频率下获取多个LIT结果，以实现精确的热点深度定位。 此外，可以使用在热点位置顶部的最小视场内测量的多个时间分辨热波形来加速数据采集。 可以分析所得波形的形状，以进一步提高检测精度和置信度。
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4.发明申请APPARATUS AND METHOD FORMING A CONTACT TO SILICIDE AND A CONTACT TO A CONTACT 审中-公开与硅胶接触并联系接触的装置和方法公开(公告)号：US20080090403A1
公开(公告)日：2008-04-17
申请号：US11537894
申请日：2006-10-02
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/76892 , H01L27/0207 , H01L27/11807
摘要： An apparatus and method for forming a contact to silicide through an active diffusion region, a contact to a contact through an active diffusion region, and a contact to a polysilicon structure through a shallow trench isolation region to create a conductive connection with a circuit node of interest. In one embodiment, an opening through the active diffusion region to an associated silicide layer is used to form the conductive connection. In another embodiment, an opening through the active diffusion region to an associated contact is used to form the conductive connection. In yet another embodiment, an opening through a shallow trench isolation region to a polysilicon structure is used to form the conductive connection.
摘要翻译： 一种用于通过有源扩散区形成与硅化物的接触的装置和方法，通过有源扩散区与接触的接触，以及通过浅沟槽隔离区与多晶硅结构的接触，以产生与电路节点的导电连接 利益。 在一个实施例中，通过有源扩散区到相关硅化物层的开口用于形成导电连接。 在另一个实施例中，通过有源扩散区到相关触头的开口用于形成导电连接。 在另一个实施例中，通过浅沟槽隔离区到多晶硅结构的开口用于形成导电连接。
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