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公开(公告)号：US20170331249A1
公开(公告)日：2017-11-16
申请号：US15151647
申请日：2016-05-11
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Di Liang , Yingtao Hu
IPC: H01S5/026 , H01S5/042 , H01S5/02 , H01S5/00 , H01S5/0625
CPC classification number: H01S5/0265 , H01S5/0085 , H01S5/021 , H01S5/026 , H01S5/0607 , H01S5/1032 , H01S5/1071
Abstract: According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.
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公开(公告)号：US20240388061A1
公开(公告)日：2024-11-21
申请号：US18320608
申请日：2023-05-19
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Sagi Mathai , Yingtao Hu
Abstract: Optical devices and methods of fabricating the same are provided. An example of the disclosed optical devices includes an epitaxial mesa formed on a silicon substrate and a single crystal semiconductor material layer formed between the silicon substrate and the epitaxial mesa. The single crystal semiconductor material layer comprises a bandgap that is wider than a bandgap of the epitaxial mesa. The example optical device also includes a semiconductor device layer formed between the single crystal semiconductor material layer and the epitaxial mesa. Examples of the optical devices include vertical injection optical devices, which can include an optically active region. In these examples, the bandgap of the single crystal semiconductor material layer is wider than a bandgap of the optically active region.
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公开(公告)号：US09846277B1
公开(公告)日：2017-12-19
申请号：US15222922
申请日：2016-07-28
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Yingtao Hu , Di Liang , Raymond G Beausoleil
CPC classification number: G02B6/122
Abstract: Examples herein relate to semiconductor devices having contacts that provide low contact resistance for both p-type and n-type materials. An example semiconductor device includes a semiconductor device layer having at least one of a p-type material or a n-type material. A contact is manufactured on the semiconductor device layer with a complementary metal-oxide-semiconductor process. The contact includes a first layer having palladium coupled with a surface of the semiconductor device layer, a conducting second layer coupled with the first layer, and a third layer having germanium coupled with the second conducting layer.
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公开(公告)号：US10305251B2
公开(公告)日：2019-05-28
申请号：US15151647
申请日：2016-05-11
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Di Liang , Yingtao Hu
Abstract: According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.
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