公开(公告)号：US09511585B2

公开(公告)日：2016-12-06

申请号：US14787711

申请日：2013-07-12

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： James Elmer Abbott, Jr. ,  Arun K. Agarwal ,  Roberto A. Pugliese ,  Greg Scott Long ,  Stephen Horvath ,  Douglas A. Keszler ,  John Wager ,  Kristopher Olsen ,  John McGlone

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14112 ,  B41J2/14016 ,  B41J2/14088 ,  B41J2/14129 ,  B41J2/164 ,  B41J2/1646 ,  B41J2/1648 ,  B41J2202/03 ,  B41J2202/11

Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.

Abstract translation: 本公开涉及具有非晶金属保护层的热喷墨打印头堆叠，其包括绝缘基板，施加到绝缘基板的电阻器，施加到电阻器的电阻器钝化层以及施加到电阻器的非晶薄金属保护层 电阻钝化层。 非晶态金属保护层可以包含5原子％至90原子％的碳，硅或硼准金属。 该膜还可以包括第一和第二金属，每个包含5原子％至90原子％的钛，钒，铬，钴，镍，锆，铌，钼，铑，钯，铪，钽，钨，铱， 或铂金。 第二金属与第一金属不同，并且准金属，第一金属和第二金属占非晶金属保护层的至少70原子％。

公开(公告)号：US20190100007A1

公开(公告)日：2019-04-04

申请号：US16067788

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Roberto A Pugliese ,  Greg Scott Long ,  Douglas A Keszler ,  John Wager

IPC: B41J2/14 ,  B41J2/16 ,  C22C45/00

CPC classification number: B41J2/14129 ,  B41J2/1606 ,  B41J2/1646 ,  B41J2202/03 ,  C22C1/002 ,  C22C45/00 ,  C22C45/10 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/185 ,  C23C28/04 ,  H01B1/02

Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.

公开(公告)号：US11279129B2

公开(公告)日：2022-03-22

申请号：US16067945

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Douglas A Keszler ,  John Wager ,  Roberto A Pugliese ,  William F Stickle ,  Greg Scott Long

IPC: B41J2/14 ,  C22C45/00 ,  H01B1/02 ,  C23C14/14 ,  H01B5/02 ,  B32B15/00

Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.

公开(公告)号：US20200270742A1

公开(公告)日：2020-08-27

申请号：US16067945

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Douglas A Keszler ,  John Wager ,  Roberto A Pugliese ,  William F Stickle ,  Greg Scott Long

IPC: C23C14/14 ,  C22C45/00 ,  C23C14/34 ,  B41J2/14

Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.

公开(公告)号：US10449763B2

公开(公告)日：2019-10-22

申请号：US16067788

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Roberto A Pugliese ,  Greg Scott Long ,  Douglas A Keszler ,  John Wager

IPC: B41J2/14 ,  C23C14/00 ,  H01B1/02 ,  B41J2/16 ,  C22C45/00 ,  C23C14/08 ,  C23C14/18 ,  C23C28/04

Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.

公开(公告)号：US20190119101A1

公开(公告)日：2019-04-25

申请号：US16068261

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Roberto A Pugliese ,  Greg Scott Long ,  John Wager ,  Douglas A Keszler ,  T. Stafford Johnson ,  William F Stickel

IPC: B81B7/00 ,  C23C14/18 ,  C23C8/10 ,  C23C14/34 ,  B81C1/00 ,  B41J2/14

Abstract: An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.