公开(公告)号：US5815396A

公开(公告)日：1998-09-29

申请号：US437683

申请日：1995-05-09

申请人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

发明人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

IPC分类号： C23C14/54 ,  H01L21/00 ,  G06F11/00 ,  G06F19/00

CPC分类号： H01L21/67109 ,  C23C14/541 ,  H01L21/67098

摘要： The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

摘要翻译： 本发明涉及在真空中加工晶片的真空处理设备，以及在晶片上形成薄膜的薄膜涂布或成形设备及方法，其中通过使用红外辐射温度计进行晶片的辐射测量和温度控制。 基于辐射测量，进行处理期间晶片的加热和/或冷却。

公开(公告)号：US5707500A

公开(公告)日：1998-01-13

申请号：US467964

申请日：1995-06-06

申请人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

发明人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

IPC分类号： C23C14/54 ,  H01L21/00 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01L21/67109 ,  C23C14/541 ,  H01L21/67098

摘要： The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

摘要翻译： 本发明涉及在真空中加工晶片的真空处理设备，以及在晶片上形成薄膜的薄膜涂布或成形设备及方法，其中通过使用红外辐射温度计进行晶片的辐射测量和温度控制。 基于辐射测量，进行处理期间晶片的加热和/或冷却。

公开(公告)号：US06171641B2

公开(公告)日：2001-01-09

申请号：US08260321

申请日：1994-06-15

申请人： Akira Okamoto ,  Shigeru Kobayashi ,  Hideaki Shimamura ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Satosi Kisimoto ,  Yuji Yoneoka

发明人： Akira Okamoto ,  Shigeru Kobayashi ,  Hideaki Shimamura ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Satosi Kisimoto ,  Yuji Yoneoka

IPC分类号： C23C1646

CPC分类号： C23C16/463 ,  H01L21/67109 ,  H01L21/67248

摘要： A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.

摘要翻译： 一种用于在真空室中的晶片上进行各种处理的真空处理设备，以及使用该真空处理设备的成膜方法和成膜设备。 使用本发明的真空处理装置的真空处理装置，成膜方法和成膜装置的特征在于，在薄膜沉积工艺中进行晶片的温度控制，其特征在于，在使用 执行温度校准阶段和快门的组合，将衬底转移到真空膜沉积处理室中的阶段，并且通过将衬底温度控制到指定温度将膜沉积在衬底上。

公开(公告)号：US4963239A

公开(公告)日：1990-10-16

申请号：US301468

申请日：1989-01-26

申请人： Hideaki Shimamura ,  Masao Sakata ,  Shigeru Kobayashi ,  Yuji Yoneoka ,  Tsuneaki Kamei ,  Tsuneyoshi Kawahito ,  Shoyo Fujita ,  Hiroshi Nakamura

发明人： Hideaki Shimamura ,  Masao Sakata ,  Shigeru Kobayashi ,  Yuji Yoneoka ,  Tsuneaki Kamei ,  Tsuneyoshi Kawahito ,  Shoyo Fujita ,  Hiroshi Nakamura

IPC分类号： C23C14/34 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/34 ,  H01J37/32706 ,  H01J37/34

摘要： A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.

摘要翻译： 衬底偏压系统的溅射工艺和用于执行衬底偏压系统的设备，能够在阶梯式底层上形成令人满意的表面覆盖的膜。 本发明解决了通过调整衬底偏压系统的常规溅射工艺形成的膜的质量的问题，通过调节其上将形成膜的衬底的偏置电位，使得溅射气体的离子的动能落在 基板周期性变化。 通过周期性地改变射频（或直流）偏置电源的输出的幅度或通过改变射频（或直流）偏压电源的输出的电压脉冲流的占空因数来调节偏置电位。