公开(公告)号：US5707500A

公开(公告)日：1998-01-13

申请号：US467964

申请日：1995-06-06

申请人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

发明人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

IPC分类号： C23C14/54 ,  H01L21/00 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01L21/67109 ,  C23C14/541 ,  H01L21/67098

摘要： The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

摘要翻译： 本发明涉及在真空中加工晶片的真空处理设备，以及在晶片上形成薄膜的薄膜涂布或成形设备及方法，其中通过使用红外辐射温度计进行晶片的辐射测量和温度控制。 基于辐射测量，进行处理期间晶片的加热和/或冷却。

公开(公告)号：US5815396A

公开(公告)日：1998-09-29

申请号：US437683

申请日：1995-05-09

申请人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

发明人： Hideaki Shimamura ,  Yuji Yoneoka ,  Shigeru Kobayashi ,  Satosi Kisimoto ,  Sunao Matsubara ,  Hiroyuki Shida ,  Yukio Tanigaki ,  Masashi Yamamoto ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Tokio Kato ,  Akira Okamoto

IPC分类号： C23C14/54 ,  H01L21/00 ,  G06F11/00 ,  G06F19/00

CPC分类号： H01L21/67109 ,  C23C14/541 ,  H01L21/67098

摘要： The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

摘要翻译： 本发明涉及在真空中加工晶片的真空处理设备，以及在晶片上形成薄膜的薄膜涂布或成形设备及方法，其中通过使用红外辐射温度计进行晶片的辐射测量和温度控制。 基于辐射测量，进行处理期间晶片的加热和/或冷却。

公开(公告)号：US06171641B2

公开(公告)日：2001-01-09

申请号：US08260321

申请日：1994-06-15

申请人： Akira Okamoto ,  Shigeru Kobayashi ,  Hideaki Shimamura ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Satosi Kisimoto ,  Yuji Yoneoka

发明人： Akira Okamoto ,  Shigeru Kobayashi ,  Hideaki Shimamura ,  Susumu Tsuzuku ,  Eisuke Nishitani ,  Satosi Kisimoto ,  Yuji Yoneoka

IPC分类号： C23C1646

CPC分类号： C23C16/463 ,  H01L21/67109 ,  H01L21/67248

摘要： A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.

摘要翻译： 一种用于在真空室中的晶片上进行各种处理的真空处理设备，以及使用该真空处理设备的成膜方法和成膜设备。 使用本发明的真空处理装置的真空处理装置，成膜方法和成膜装置的特征在于，在薄膜沉积工艺中进行晶片的温度控制，其特征在于，在使用 执行温度校准阶段和快门的组合，将衬底转移到真空膜沉积处理室中的阶段，并且通过将衬底温度控制到指定温度将膜沉积在衬底上。

公开(公告)号：US5670421A

公开(公告)日：1997-09-23

申请号：US589867

申请日：1996-01-23

申请人： Eisuke Nishitani ,  Susumu Tsuzuku ,  Shigeru Kobayashi ,  Osamu Kasahara ,  Hiroki Nezu ,  Masakazu Ishino ,  Tsuyoshi Tamaru

发明人： Eisuke Nishitani ,  Susumu Tsuzuku ,  Shigeru Kobayashi ,  Osamu Kasahara ,  Hiroki Nezu ,  Masakazu Ishino ,  Tsuyoshi Tamaru

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/768 ,  H01L23/522 ,  H01L21/441

CPC分类号： C23C16/0245 ,  C23C16/045 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/906

摘要： The present invention relates to a method for filling small via holes provided to insulating film on a wafer to expose parts of the underlayer of the wafer by metal by means of CVD, and an apparatus therefor. The gist of the present invention lies in that, before CVD is conducted, a surface cleaning treatment of small via hole bottom underlayer surface and a stabilization treatment of insulating film surface activated thereby are carried out successively or simultaneously and optionally an anti-corrosive treatment is applied to underlayer surface, and then the CVD treatment is conducted without exposing the underlayer metal subjected to above treatments to the air. The present invention provides an effect of enabling via filling by metal which shows good selectivity and gives a low interfacial resistance between underlayer metal and filled metal.

摘要翻译： 本发明涉及一种用于填充设置在晶片上的绝缘膜的小通孔的方法，用于通过CVD将金属的部分金属暴露在晶片的底层上，以及其装置。 本发明的要点在于，在进行CVD之前，依次或同时进行小通孔底底层表面的表面清洗处理和由此而被活化的绝缘膜表面的稳定化处理，任选地，防腐处理为 施加到底层表面，然后进行CVD处理而不将经过上述处理的底层金属暴露在空气中。 本发明提供能够通过金属进行通孔填充的效果，其显示出良好的选择性并且在下层金属和填充金属之间产生低的界面电阻。

公开(公告)号：US5498768A

公开(公告)日：1996-03-12

申请号：US87027

申请日：1993-07-06

申请人： Eisuke Nishitani ,  Susumu Tsuzuku ,  Shigeru Kobayashi ,  Osamu Kasahara ,  Hiroki Nezu ,  Masakazu Ishino ,  Tsuyoshi Tamaru

发明人： Eisuke Nishitani ,  Susumu Tsuzuku ,  Shigeru Kobayashi ,  Osamu Kasahara ,  Hiroki Nezu ,  Masakazu Ishino ,  Tsuyoshi Tamaru

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/768 ,  H01L23/522 ,  H01L21/441

CPC分类号： C23C16/0245 ,  C23C16/045 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/906

摘要： The present invention relates to a method for filling small via holes provided to insulating film on a wafer to expose parts of the underlayer of the wafer by metal by means of CVD, and an apparatus therefor. The gist of the present invention lies in that, before CVD is conducted, a surface cleaning treatment of small via hole bottom underlayer surface and a stabilization treatment of insulating film surface activated thereby are carried out successively or simultaneously and optionally an anti-corrosive treatment is applied to underlayer surface, and then the CVD treatment is conducted without exposing the underlayer metal subjected to above treatments to the air. The present invention provides an effect of enabling via filling by metal which shows good selectivity and gives a low interfacial resistance between underlayer metal and filled metal.

摘要翻译： 本发明涉及一种用于填充设置在晶片上的绝缘膜的小通孔的方法，用于通过CVD将金属的部分金属暴露在晶片的底层上，以及其装置。 本发明的要点在于，在进行CVD之前，依次或同时进行小通孔底底层表面的表面清洗处理和由此而被活化的绝缘膜表面的稳定化处理，任选地，防腐处理为 施加到底层表面，然后进行CVD处理而不将经过上述处理的底层金属暴露在空气中。 本发明提供能够通过金属进行通孔填充的效果，其显示出良好的选择性并且在下层金属和填充金属之间产生低的界面电阻。

公开(公告)号：US4830891A

公开(公告)日：1989-05-16

申请号：US126430

申请日：1987-11-30

申请人： Eisuke Nishitani ,  Susumu Tsuzuku ,  Mitsuo Nakatani ,  Masaaki Maehara ,  Mitsuaki Horiuchi ,  Koichiro Mizukami

发明人： Eisuke Nishitani ,  Susumu Tsuzuku ,  Mitsuo Nakatani ,  Masaaki Maehara ,  Mitsuaki Horiuchi ,  Koichiro Mizukami

IPC分类号： H01L21/285 ,  C23C14/24 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08

CPC分类号： C23C16/04

摘要： A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.

摘要翻译： 金属薄膜通过化学沉积法以良好的选择性，良好的再现性和高的沉积速率沉积在衬底的底层的预定部分上，通过防止氢原子与衬底的部分粘附而不被金属沉积 用于仅加热基板或特殊气体流量控制装置的特殊装置。

公开(公告)号：US4478902A

公开(公告)日：1984-10-23

申请号：US298348

申请日：1981-09-01

申请人： Susumu Tsuzuku ,  Yasuo Hira ,  Masao Gotoh ,  Hitoshi Yokono ,  Yoshihisa Hosoe

发明人： Susumu Tsuzuku ,  Yasuo Hira ,  Masao Gotoh ,  Hitoshi Yokono ,  Yoshihisa Hosoe

IPC分类号： G03B21/60 ,  B29C44/14 ,  B32B5/18 ,  B32B5/32 ,  C08G18/48 ,  C08G18/50 ,  C08J9/12 ,  G03B21/56 ,  B32B5/14 ,  B32B5/20 ,  B32B7/12

CPC分类号： C08G18/5033 ,  B29C44/146 ,  B32B5/18 ,  C08G18/4804 ,  C08G18/482 ,  G03B21/56 ,  Y10T428/24628 ,  Y10T428/249982 ,  Y10T428/249989

摘要： A screen for projection television set comprising a foamed support and a reflective film adhered to the concave side of the support, said support having the outer layers with a high density such as 0.7 to 1.2 g/cm.sup.3 and the inner portion with a low density so as to make the density of the foamed support as a whole 0.2 to 0.5 g/cm.sup.3, has good projection properties, surface hardness with sufficiently strong support. When said support is foam molded by using a polyurethane having special polyol components, its heat resistance is remarkably increased and can be foam molded at high temperatures without deformation.

摘要翻译： 一种用于投影电视机的屏幕，包括发泡支撑体和粘附到支撑体的凹侧的反射膜，所述支撑体具有高密度的外层，例如0.7至1.2g / cm 3，密度低的内部部分 为了使发泡载体的密度整体为0.2〜0.5g / cm 3，具有良好的投影性能，表面硬度具有足够坚固的支撑。 当所述载体通过使用具有特殊多元醇组分的聚氨酯进行泡沫模塑时，其耐热性显着增加，并且可在高温下进行泡沫模塑而不变形。

公开(公告)号：US4342842A

公开(公告)日：1982-08-03

申请号：US280210

申请日：1981-07-06

申请人： Yasuo Hira ,  Susumu Tsuzuku ,  Masao Gotoh ,  Hitoshi Yokono ,  Hiroshi Kaneko ,  Yoshihisa Hosoe

发明人： Yasuo Hira ,  Susumu Tsuzuku ,  Masao Gotoh ,  Hitoshi Yokono ,  Hiroshi Kaneko ,  Yoshihisa Hosoe

IPC分类号： C08G18/00 ,  B29C39/00 ,  B29C39/02 ,  B29C39/24 ,  B29C39/26 ,  B29D1/00 ,  C08G18/48 ,  C08G18/50 ,  C08J9/02 ,  C08G18/14

CPC分类号： C08G18/482 ,  C08G18/5033 ,  C08G2101/0025 ,  C08G2101/0066

摘要： Rigid polyurethane foams having excellent heat resistance and impact resistance can be produced with good workability due to good flow properties by using a composition comprising a polyol, a polyisocyanate, a blowing agent and a reaction accelerator as essential component, characterized by using as the polyol, a mixture of (a) an alkylene oxide adduct of 4,4'-diaminodiphenylmethane having OH value of 280-600 mg KOH/g, (b) an aliphatic polyether having a hdyroxyl value of 450-800 mg KOH/g and 3 or 4 hydroxyl groups in the molecule, and (c) a polyether having a hydroxyl value of 30 to 100 mg KOH/g and 2 or 3 hydroxyl groups in the molecule, in limited amounts.

摘要翻译： 通过使用包含多元醇，多异氰酸酯，发泡剂和反应促进剂作为必要成分的组合物，由于良好的流动性，可以制造具有优异的耐热性和耐冲击性的刚性聚氨酯泡沫，其特征在于使用多元醇， （a）OH值为280-600mg KOH / g的4,4'-二氨基二苯基甲烷的烯化氧加成物的混合物，（b）羟值为450-800mg KOH / g的脂族聚醚和3或 分子中的4个羟基，和（c）分子中羟基值为30至100mg KOH / g和2或3个羟基的聚醚，其数量有限。

公开(公告)号：US4409341A

公开(公告)日：1983-10-11

申请号：US336323

申请日：1981-12-31

申请人： Yasuo Hira ,  Susumu Tsuzuku ,  Makoto Iida ,  Masao Gotoh ,  Hitoshi Yokono ,  Yoshikazu Kimura ,  Kazumi Iijima

发明人： Yasuo Hira ,  Susumu Tsuzuku ,  Makoto Iida ,  Masao Gotoh ,  Hitoshi Yokono ,  Yoshikazu Kimura ,  Kazumi Iijima

IPC分类号： C08G18/00 ,  C08G18/50 ,  C08G18/54 ,  C08G18/76 ,  C08G18/79 ,  C08K5/521 ,  C08G18/14 ,  C08G18/32 ,  C08G18/77

CPC分类号： C08G18/797 ,  C08G18/5033 ,  C08G18/546 ,  C08G18/7664 ,  C08K5/521 ,  C08G2101/0025 ,  C08G2101/0033 ,  C08G2101/0083 ,  C08G2120/00 ,  Y10S521/901 ,  Y10S521/906

摘要： A composition for polyurethane foam comprising (a) polyols containing at least one of alkylene oxide adducts of aniline-formaldehyde condensates and alkylene oxide adducts of reduced compounds of nitrated toluenes in an amount of 30 to 70% by weight of the polyols, (b) at least one isocyanate of the formula: ##STR1## a fire retardant, together with one or more conventional catalysts, foam stabilizers, blowing agents and the like additives, can give fire retardant, high impact and heat resistant urethane foams.

摘要翻译： 一种聚氨酯泡沫的组合物，其包含（a）多元醇，其含有苯胺 - 甲醛缩合物的烯化氧加合物和硝化甲苯的还原化合物的烯化氧加合物中的至少一种，其含量为多元醇的30至70重量％，（b） 至少一种下式的异氰酸酯：阻燃剂与一种或多种常规催化剂，泡沫稳定剂，发泡剂等添加剂一起可以提供阻燃，高冲击和耐热的聚氨酯泡沫塑料 。

公开(公告)号：US4473662A

公开(公告)日：1984-09-25

申请号：US445580

申请日：1982-11-30

申请人： Yasuo Hira ,  Susumu Tsuzuku ,  Masao Gotoh ,  Hitoshi Yokono

发明人： Yasuo Hira ,  Susumu Tsuzuku ,  Masao Gotoh ,  Hitoshi Yokono

IPC分类号： C08G18/00 ,  C08G18/18 ,  C08G18/22 ,  B01J31/02 ,  B01J31/12

CPC分类号： C08G18/1883

摘要： In a composition for producing polyurethane foam which comprises an organic polyisocynate compound, a compound having at least one active hydrogen atom in the molecule, a foaming agent and a catalyst as essential components, an aminoalkylsilane represented by the following general formula is contained: ##STR1## wherein n is 1 or 2, and R.sub.1 to R.sub.5 are alkyl groups. By use of such a catalyst polyurethane foam having a even color distribution and excellent mechanical properties is produced.

摘要翻译： 在含有有机多异氰酸酯化合物，分子中具有至少一个活性氢原子的化合物，发泡剂和作为必须成分的催化剂的聚氨酯泡沫塑料用组合物中，含有以下通式表示的氨基烷基硅烷：其中n为1或2，R 1至R 5为烷基。 通过使用具有均匀颜色分布和优异的机械性能的这种催化剂聚氨酯泡沫。