摘要:
A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.
摘要:
The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.
摘要:
The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.
摘要:
The present invention relates to a method for filling small via holes provided to insulating film on a wafer to expose parts of the underlayer of the wafer by metal by means of CVD, and an apparatus therefor. The gist of the present invention lies in that, before CVD is conducted, a surface cleaning treatment of small via hole bottom underlayer surface and a stabilization treatment of insulating film surface activated thereby are carried out successively or simultaneously and optionally an anti-corrosive treatment is applied to underlayer surface, and then the CVD treatment is conducted without exposing the underlayer metal subjected to above treatments to the air. The present invention provides an effect of enabling via filling by metal which shows good selectivity and gives a low interfacial resistance between underlayer metal and filled metal.
摘要:
The present invention relates to a method for filling small via holes provided to insulating film on a wafer to expose parts of the underlayer of the wafer by metal by means of CVD, and an apparatus therefor. The gist of the present invention lies in that, before CVD is conducted, a surface cleaning treatment of small via hole bottom underlayer surface and a stabilization treatment of insulating film surface activated thereby are carried out successively or simultaneously and optionally an anti-corrosive treatment is applied to underlayer surface, and then the CVD treatment is conducted without exposing the underlayer metal subjected to above treatments to the air. The present invention provides an effect of enabling via filling by metal which shows good selectivity and gives a low interfacial resistance between underlayer metal and filled metal.
摘要:
A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.
摘要:
A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.
摘要:
In a liquid discharge head substrate having a connection line connected to a plurality of energy generating elements, and arranged between adjacent energy generating elements, a distance between the adjacent energy generating elements, between which the connection line is not arranged, is provided to be narrower than a distance of a portion where the connection line is provided.
摘要:
A liquid ejection head includes: a first and a second common liquid chamber formed in a substrate; a first nozzle array in which short and long nozzles are connected to the first common liquid chamber and alternately arranged on one side of the chamber; a second nozzle array in which short and long nozzles are connected to the first common liquid chamber and alternately arranged on the other side; a third nozzle array in which short and long nozzles are connected to the second common liquid chamber and alternately arranged on one side of the chamber; and a fourth nozzle array in which short and long nozzles are connected to the second common liquid chamber and alternately arranged on the other side; wherein the long and short nozzles formed on the one side and the long and short nozzles formed on the other side are disposed within a pitch P.
摘要:
A liquid ejection head includes ejection orifices allowing liquid to be ejected therethrough, passages communicating with the ejection orifices and the pressure chambers each accommodating an energy generating element generating energy for ejecting the liquid therein, a supply port supplying the liquid to the passages, and a filter including substantially cylindrical members between the supply port and passages and having openings. Each of the ejection orifices has a substantially circular cross section having larger and smaller diameters substantially perpendicularly to its liquid ejecting direction. Each of the openings has a substantially rectangular cross section having longer and shorter sides substantially perpendicularly to its liquid supplying direction. The relationships D1>L1, D1 L2≧D1 are satisfied where D1 is the smaller diameter, D2 is the larger diameter, L1 is the shorter side, and L2 is the longer side.