公开(公告)号：US20100090223A1

公开(公告)日：2010-04-15

申请号：US12636375

申请日：2009-12-11

申请人： Hidehito KITAKADO ,  Ritsuko KAWASAKI ,  Kenji KASAHARA

发明人： Hidehito KITAKADO ,  Ritsuko KAWASAKI ,  Kenji KASAHARA

IPC分类号： H01L33/00 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

公开(公告)号：US20110254068A1

公开(公告)日：2011-10-20

申请号：US13172398

申请日：2011-06-29

申请人： Hidehito KITAKADO ,  Ritsuko KAWASAKI ,  Kenji KASAHARA

发明人： Hidehito KITAKADO ,  Ritsuko KAWASAKI ,  Kenji KASAHARA

IPC分类号： H01L27/092 ,  H01L27/06

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

公开(公告)号：US20110309366A1

公开(公告)日：2011-12-22

申请号：US13221068

申请日：2011-08-30

申请人： Kenji KASAHARA

发明人： Kenji KASAHARA

IPC分类号： H01L51/10

CPC分类号： H01L51/0001 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/0545 ,  H01L51/0558

摘要： The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps. The method for manufacturing the organic thin-film transistor substrate of the present invention, in which an organic thin-film transistor is formed in a first region on a substrate, a second region for forming a light-emitting element in abutment with the first region is included, and a bank part is formed in a peripheral part of the second region, is characterized by including: a first step of forming the organic thin-film transistor in the first region on the substrate and forming at least one of the gate insulation layer and the organic semiconductor layer included by this organic thin-film transistor as far as the second region, thereby forming, in the second region, a bank precursor layer composed of a laminated structure formed on the second region; and a second step of removing the regions of the bank precursor layer other than the peripheral part, thereby forming the bank part made of the remaining bank precursor layer.

摘要翻译： 本发明是一种制造包含有机薄膜晶体管作为晶体管元件的有机薄膜晶体管基板的方法，本发明的目的是提供一种制造方法，该方法能够以较少数量的步骤 。 本发明的有机薄膜晶体管基板的制造方法，其中有机薄膜晶体管形成在基板的第一区域中，第二区域用于形成与第一区域相邻的发光元件 并且在所述第二区域的周边部分中形成堤部，其特征在于包括：第一步骤，在所述基板上的所述第一区域中形成所述有机薄膜晶体管，并形成所述栅极绝缘体中的至少一个 层和由该有机薄膜晶体管包含的有机半导体层至第二区域，从而在第二区域中形成由形成在第二区域上的层叠结构体构成的堤岸前体层; 以及除了外围部分以外的堤岸前体层的区域的第二步骤，从而形成由剩余堤坝前体层制成的堤岸部分。

公开(公告)号：US20100123522A1

公开(公告)日：2010-05-20

申请号：US12618315

申请日：2009-11-13

申请人： Kenji KASAHARA

发明人： Kenji KASAHARA

IPC分类号： H03B1/00

CPC分类号： H03B1/02 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H03L1/023 ,  H03L1/028 ,  H03L1/04 ,  H05K1/0201 ,  H05K1/0212 ,  H05K1/181 ,  H05K2201/10022 ,  H05K2201/10075 ,  H05K2201/10151 ,  H05K2203/165 ,  H01L2224/0401

摘要： A constant-temperature type crystal oscillator includes: a crystal unit including a case main body including a first power source terminal on an outer bottom surface thereof; a surface-mounted oscillator; a temperature control circuit including a heating resistor and a temperature sensor; and a circuit substrate including a second power source terminal. One ends of the heating resistor and the temperature sensor are electrically connected to the second power source terminal. The first power source terminal of the surface-mounted oscillator and the one ends of the heating resistor and the temperature sensor are electrically connected to the second power source terminal of the circuit substrate. The first power source terminal of the surface-mounted oscillator is directly and electrically connected to, at least, the one end of the temperature sensor via an electrically-conducting path.

摘要翻译： 恒温型晶体振荡器包括：晶体单元，包括壳主体，其在其外底表面上包括第一电源端子; 表面安装的振荡器; 包括加热电阻器和温度传感器的温度控制电路; 以及包括第二电源端子的电路基板。 加热电阻器和温度传感器的一端电连接到第二电源端子。 表面安装的振荡器的第一电源端子和加热电阻器的一端和温度传感器电连接到电路基板的第二电源端子。 表面安装振荡器的第一电源端子至少通过导电路径电连接到温度传感器的一端。

公开(公告)号：US20120086516A1

公开(公告)日：2012-04-12

申请号：US13253394

申请日：2011-10-05

申请人： Hiroyuki MURAKOSHI ,  Kenji KASAHARA ,  Daisuke NISHIYAMA

发明人： Hiroyuki MURAKOSHI ,  Kenji KASAHARA ,  Daisuke NISHIYAMA

IPC分类号： H03B5/30

CPC分类号： H03L1/028 ,  H05K1/0271 ,  H05K3/3442 ,  H05K2201/09063 ,  H05K2201/10083 ,  H05K2201/10636 ,  Y02P70/611

摘要： Provided is an oven controlled crystal oscillator which can reduce an occurrence of cracks in an applied solder of a large-sized circuit component and improve reliability. It is an oven controlled crystal oscillator in which a slit is formed in a periphery or below a lower surface of a large-sized circuit component provided on the substrate, further, a plurality of small-sized circuit components, which are smaller than the large-sized circuit component, are disposed around the large-sized circuit component, as necessary, and for the plurality of small-sized circuit components, an electronic component, which is electrically connected, and a dummy electronic component, which is not electrically connected, are used.

摘要翻译： 本发明提供一种可控制晶体振荡器，其可以减少大尺寸电路元件的焊接中出现的裂缝，提高可靠性。 它是一种烤箱控制的晶体振荡器，其中在设置在基板上的大尺寸电路部件的下表面的周边或下方形成有狭缝，此外，多个小型电路部件小于大 根据需要设置在大尺寸电路部件周围，对于多个小型电路部件，电连接的电子部件和未电气连接的虚拟电子部件， 被使用。