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公开(公告)号：US07977750B2
公开(公告)日：2011-07-12
申请号：US12636375
申请日：2009-12-11
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。
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公开(公告)号：US20070138475A1
公开(公告)日：2007-06-21
申请号：US11703667
申请日：2007-02-08
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted, stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或倒置的交错TFT适当地构造成与各个电路的功能一致，从而提高半导体的操作效率和可靠性 设备。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。
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公开(公告)号：US07132687B2
公开(公告)日：2006-11-07
申请号：US10958887
申请日：2004-10-05
IPC分类号： H01L29/04
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。
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公开(公告)号：US20050051772A1
公开(公告)日：2005-03-10
申请号：US10958887
申请日：2004-10-05
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L29/08 , H01L31/036 , H01L29/15
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。
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5.发明授权Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate 有权具有形成在显示区域中的像素TFT的液晶显示装置和形成在同一基板上的显示区域周围的驱动电路公开(公告)号：US06346730B1
公开(公告)日：2002-02-12
申请号：US09541608
申请日：2000-04-03
IPC分类号： H01L2701
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。
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公开(公告)号：US08541844B2
公开(公告)日：2013-09-24
申请号：US13172398
申请日：2011-06-29
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
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公开(公告)号：US06809382B2
公开(公告)日：2004-10-26
申请号：US10633754
申请日：2003-08-04
IPC分类号： H01L2701
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。
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公开(公告)号：US06709902B2
公开(公告)日：2004-03-23
申请号：US10035205
申请日：2002-01-04
IPC分类号： H01L2703
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78633
摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。
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9.发明授权公开(公告)号：US06362507B1
公开(公告)日：2002-03-26
申请号：US09550828
申请日：2000-04-18
申请人： Hiroyuki Ogawa , Kazuhide Tomiyasu , Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
发明人： Hiroyuki Ogawa , Kazuhide Tomiyasu , Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
IPC分类号： H01L2703
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/1214 , H01L27/1255 , H01L2029/7863
摘要： An object of the present invention is to improve the reliability and the operation performance of a semiconductor device comprising a driver circuit and a pixel pixel section by optimizing the TFT structure disposed in each circuit in accordance with the function of the circuit. The optimized circuit operation can be obtained by providing a LDD region that overlaps with at least the gate electrode in the driver circuit n-channel TFT, and a LDD region in the pixel section n-channel TFT in which the impurity concentration of the both LDD regions are differed.
摘要翻译： 本发明的目的是通过根据电路的功能优化设置在每个电路中的TFT结构来提高包括驱动电路和像素像素部分的半导体器件的可靠性和操作性能。 可以通过提供与驱动电路n沟道TFT中的至少栅电极重叠的LDD区域和像素区间n沟道TFT中的两个LDD的杂质浓度的LDD区域来获得优化的电路操作 地区不同。
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公开(公告)号：US06281552B1
公开(公告)日：2001-08-28
申请号：US09532690
申请日：2000-03-22
IPC分类号： H01L2904
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。
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