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公开(公告)号:US20070256626A1
公开(公告)日:2007-11-08
申请号:US11659339
申请日:2005-08-31
IPC分类号: C30B23/00 , H01L21/205 , G05D16/00
CPC分类号: H01L21/02378 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10T117/1008
摘要: A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.
摘要翻译: 一种用于生长氮化物半导体的晶体的方法,其中在将反应管(11)中安装基板(12)的步骤之后,将包含第3族元素的第一原料气体进料到反应管中的基板上 并且在反应管中将含有元素氮的第二原料气体进料到基板上的步骤交替地进行,以将氮化物半导体晶体直接沉积在基板上。 第二原料气体中所含的元素氮的摩尔数与第一原料气体中的第三族元素的摩尔数相比为200以上。
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公开(公告)号:US08529697B2
公开(公告)日:2013-09-10
申请号:US11659339
申请日:2005-08-31
IPC分类号: C30B25/00
CPC分类号: H01L21/02378 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10T117/1008
摘要: A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.
摘要翻译: 一种用于生长氮化物半导体的晶体的方法,其中在将反应管(11)中安装基板(12)的步骤之后,将包含第3族元素的第一原料气体进料到反应管中的基板上 并且在反应管中将含有元素氮的第二原料气体进料到基板上的步骤交替地进行,以将氮化物半导体晶体直接沉积在基板上。 第二原料气体中所含的元素氮的摩尔数与第一原料气体中的第三族元素的摩尔数相比为200以上。
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3.
公开(公告)号:US4399542A
公开(公告)日:1983-08-16
申请号:US239845
申请日:1981-03-02
申请人: Hideo Kawanishi
发明人: Hideo Kawanishi
CPC分类号: H01S5/2203 , H01S5/125
摘要: A solid state AlGaAs laser of the transverse junction stripe with distributed Bragg reflector type.
摘要翻译: 具有分布布拉格反射器类型的横向连接条的固态AlGaAs激光器。
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