公开(公告)号：US07699604B2

公开(公告)日：2010-04-20

申请号：US11828771

申请日：2007-07-26

申请人： Hideki Ito ,  Shinichi Mitani ,  Hironobu Hirata

发明人： Hideki Ito ,  Shinichi Mitani ,  Hironobu Hirata

IPC分类号： F27B5/16

CPC分类号： C23C16/46 ,  C23C16/52 ,  C30B25/105 ,  C30B25/16 ,  H01L21/67115

摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.

摘要翻译： 一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体 晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

公开(公告)号：US20080308036A1

公开(公告)日：2008-12-18

申请号：US12137843

申请日：2008-06-12

申请人： Hideki ITO ,  Hironobu Hirata ,  Shinichi Mitani

发明人： Hideki ITO ,  Hironobu Hirata ,  Shinichi Mitani

IPC分类号： C30B35/00 ,  C30B23/02

CPC分类号： C30B35/00 ,  C23C16/45504 ,  C23C16/45565 ,  C30B25/10

摘要： There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

摘要翻译： 提供了一种气相生长装置，其在外延生长步骤之后缩短晶片衬底的温度降低时间，以使得容易实现外延层的成膜中的高通量。 气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器底部的排出口，半导体晶片 放置在面对气体分配板。 气体分配板和环形保持器之间的分隔距离被设定为使得从气体供给口向下流动通过气体分配板向下流动以降低温度的冷却气体在半导体晶片的表面上处于层流状态，或 环形支架的表面。

公开(公告)号：US20080032036A1

公开(公告)日：2008-02-07

申请号：US11828771

申请日：2007-07-26

申请人： Hideki ITO ,  Shinichi Mitani ,  Hironobu Hirata

发明人： Hideki ITO ,  Shinichi Mitani ,  Hironobu Hirata

IPC分类号： C23C16/00 ,  B05C11/00 ,  C23C16/52

CPC分类号： C23C16/46 ,  C23C16/52 ,  C30B25/105 ,  C30B25/16 ,  H01L21/67115

摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.

摘要翻译： 一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体 晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

公开(公告)号：US20070026148A1

公开(公告)日：2007-02-01

申请号：US11494674

申请日：2006-07-28

申请人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

发明人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

IPC分类号： C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/14

摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.

摘要翻译： 气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道， 气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上 与基板的背面接触。

公开(公告)号：US20090068851A1

公开(公告)日：2009-03-12

申请号：US12207754

申请日：2008-09-10

申请人： Hironobu Hirata ,  Yoshikazu Moriyama ,  Masayoshi Yajima ,  Shinichi Mitani

发明人： Hironobu Hirata ,  Yoshikazu Moriyama ,  Masayoshi Yajima ,  Shinichi Mitani

IPC分类号： H01L21/31 ,  C23C14/50

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68764

摘要： A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.

摘要翻译： 本发明的感受体包括直径小于晶片w的直径的内基座和用于将晶片w放置在其表面上的突出部分，以及在其中心部分具有开口的外基座，第一 步骤部分，用于放置内部基座以阻挡开口;以及第二台阶部分，设置在第一台阶部分之上用于放置晶片。

公开(公告)号：US20090239362A1

公开(公告)日：2009-09-24

申请号：US12406796

申请日：2009-03-18

申请人： Hironobu Hirata ,  Shinichi Mitani

发明人： Hironobu Hirata ,  Shinichi Mitani

IPC分类号： H01L21/20 ,  B05C11/00 ,  B05C1/00

CPC分类号： H01L29/7813 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/14 ,  C30B29/06 ,  H01L21/67109 ,  H01L21/67115 ,  H01L29/0634

摘要： An apparatus for manufacturing a semiconductor device, including in a reaction chamber: a rotor provided with a holding member holding a wafer thereon and a heater heating the wafer therein; a rotation drive mechanism; a gas supply mechanism; a gas exhaust mechanism; and a rectifying plate for rectifying the supplied process gas to supply the rectified gas, and including: an annular rectifying fin mounted on a lower portion of the plate, having a larger lower end inside diameter than an upper end inside diameter thereof and downward rectifying gas exhausted in an outer circumferential direction from above the wafer; and a distance control mechanism controlling a vertical distance between the plate and the wafer and a vertical distance between the fin and the rotor top face to be predetermined distances, respectively, thereby providing higher film formation efficiency.

摘要翻译： 一种用于制造半导体器件的装置，包括在反应室中：设置有保持晶片的保持构件的转子和在其中加热晶片的加热器; 旋转驱动机构; 供气机构; 排气机构; 以及整流板，用于对所提供的处理气体进行整流以供应整流气体，并且包括：安装在板的下部的环形整流翅片，其具有比其上端内径更大的下端内径和向下的整流气体 从晶片上方沿外周方向排出; 以及控制板和晶片之间的垂直距离和翅片与转子顶面之间的垂直距离的距离控制机构分别为预定距离，从而提供更高的成膜效率。

公开(公告)号：US08795435B2

公开(公告)日：2014-08-05

申请号：US12828963

申请日：2010-07-01

申请人： Shinya Higashi ,  Hironobu Hirata

发明人： Shinya Higashi ,  Hironobu Hirata

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01L21/68785 ,  C23C16/4586 ,  H01L21/68735

摘要： In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion.

摘要翻译： 根据本发明的实施例，提供了一种基座，其包括用于支撑硅晶片的周边部分的环形第一基座部分，并且还包括设置成与第一基座部分的周边部分接触的第二基座部分 并且覆盖第一感受器部分的开口。 第二感受体部分被设置成使得当硅晶片被支撑在第一基座部分上时，在硅晶片和第二基座部分之间形成预定尺寸的间隙，并且使得尺寸基本等于 在第一基座部分和第二基座部分之间形成直接连接到上述间隙的预定尺寸。

公开(公告)号：US20100075509A1

公开(公告)日：2010-03-25

申请号：US12563602

申请日：2009-09-21

申请人： Hironobu Hirata ,  Masayoshi Yajima ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Masayoshi Yajima ,  Yoshikazu Moriyama

IPC分类号： H01L21/316 ,  B05C11/00

CPC分类号： H01L21/02299 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/67109 ,  H01L21/67751

摘要： A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.

摘要翻译： 一种半导体器件的制造方法，包括：将晶片装载到反应室中; 将晶片放置在上推轴上; 在将晶片放置在上推轴上的状态下，将晶片的面内温度分布控制为凹陷状态来预热晶片; 在晶片保持处于凹状状态的同时降低上推轴将晶片保持在晶片保持构件上; 将晶片加热至预定温度; 旋转晶片; 并将工艺气体供应到晶片上。

公开(公告)号：US20090007841A1

公开(公告)日：2009-01-08

申请号：US12166737

申请日：2008-07-02

申请人： Hironobu Hirata ,  Hideki Arai

发明人： Hironobu Hirata ,  Hideki Arai

IPC分类号： C30B23/00

CPC分类号： C30B25/12 ,  C23C16/4585 ,  C23C16/4586

摘要： A vapor-phase growing apparatus and a vapor-phase growing method which reduce sticking of a wafer to a holder during vapor-phase growth are provided. In the vapor-phase growing apparatus, a holder arranged in a chamber includes a disk-like member having a recessed portion at the center of a holder or a ring-like member having a recessed portion at a center of a holder and having an opening in a bottom center of the holder. A first projecting portion is arranged on an inner circumference wall surface of the holder, and a second projecting portion is formed on a bottom surface of the recessed portion of the holder. In this manner, the holder can support a wafer with a small contact area. In vapor-phase growth, the wafer can be prevented from sticking to the holder.

摘要翻译： 提供了一种气相生长装置和气相生长方法，其在气相生长期间减少了将晶片粘附到保持器上。 在气相生长装置中，设置在腔室中的保持器包括：在保持器的中心具有凹部的盘状构件或在保持器的中心具有凹部的环状构件，并且具有开口 在支架的底部中心。 第一突出部分布置在保持器的内周壁表面上，并且第二突出部分形成在保持器的凹部的底表面上。 以这种方式，保持器可以支撑具有小接触面积的晶片。 在气相生长中，可以防止晶片粘附到保持器上。

公开(公告)号：US20080193646A1

公开(公告)日：2008-08-14

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/52

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber,a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。