摘要:
A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyl or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.
摘要翻译:由式(1)表示的过渡金属络合物:其中M是第4族过渡金属,A是第16族元素,B是第14族元素,n是0或1的整数,R 1, R 2,R 3,R 4和R 4可以相同或不同,并且各自独立地表示选自以下的取代基: 的基团(I)和(II):基团(I):氢,烷基等基团(II):烷氧基,烷硫基等,条件是R 1, R 2,R 3和R 4是选自组(II)的取代基; R 5,R 6,R 7,R 8,R 9,R 9, X 1,X 1和X 2可以相同或不同,各自为氢,卤素,烷基等; 并提供包含所述络合物,有机铝化合物和硼化合物的烯烃聚合催化剂。
摘要:
A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyd or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.
摘要翻译:由式(1)表示的过渡金属络合物:其中M是第4族过渡金属,A是第16族元素,B是第14族元素,n是0或1的整数,R 1, R 2,R 3,R 4和R 4可以相同或不同,并且各自独立地表示选自以下的取代基: 的基团(I)和(II):基团(I):氢,烷基等,基团(II):烷氧基,烷硫基等,条件是R 1, R 2,R 3和R 4是选自(II)组的取代基。 R 5,R 6,R 7,R 8,R 9, R 10,X 1和X 2可以相同或不同,各自为氢,卤素,醇酸等; 并提供包含所述络合物,有机铝化合物和硼化合物的烯烃聚合催化剂。
摘要:
A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyl or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.
摘要翻译:由式(1)表示的过渡金属络合物:其中M是第4族过渡金属,A是第16族元素,B是第14族元素,n是0或1的整数,R 1, R 2,R 3,R 4和R 4可以相同或不同,并且各自独立地表示选自以下的取代基: 的基团(I)和(II):基团(I):氢,烷基等,基团(II):烷氧基,烷硫基等,条件是R 1, R 2,R 3和R 4是选自(II)组的取代基。 R 5,R 6,R 7,R 8,R 9, R 10,X 1和X 2可以相同或不同,各自为氢,卤素,烷基等; 并提供包含所述络合物,有机铝化合物和硼化合物的烯烃聚合催化剂。
摘要:
A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyd or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.
摘要翻译:由式(1)表示的过渡金属络合物:其中M是第4族过渡金属,A是第16族元素,B是第14族元素,n是0或1的整数,R 1, R 2,R 3,R 4和R 4可以相同或不同,并且各自独立地表示选自以下的取代基: 的基团(I)和(II):基团(I):氢,烷基等,基团(II):烷氧基,烷硫基等,条件是R 1, R 2,R 3和R 4是选自(II)组的取代基。 R 5,R 6,R 7,R 8,R 9, R 10,X 1和X 2可以相同或不同,各自为氢,卤素,醇酸等; 并提供包含所述络合物,有机铝化合物和硼化合物的烯烃聚合催化剂。
摘要:
A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.
摘要:
The present invention provides an energy ray-curable ink composition excellent in the continuous discharge property, and excellent in curability and adherability. The present invention relates to an energy ray-curable ink composition which contains a coloring agent, contains only a monofunctional monomer having an acrylic equivalent of 300 or less, and having one ethylenic double bond in one molecule, and a polyfunctional monomer having an acrylic equivalent of 150 or less, and having two or more ethylenic double bonds in one molecule as a polymerizable compound, contains an α-aminoalkylphenone compound and a thioxanthone compound as a photopolymerization initiator, and contains a silicone compound having a polydimethylsiloxane structure as a surface conditioner.
摘要:
To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region.
摘要:
An aromatic compound of the following formula (1), (2), (5) or (6), wherein, Ar1 and Ar3 represent a tetra-valent aromatic hydrocarbon group or a tetra-valent heterocyclic group, and Ar2, Ar4, Ar5, Ar6 and Ar7 represent a tri-valent aromatic hydrocarbon group or a tri-valent heterocyclic group, A1 represents —Z1—, —Z2—Z3— or —Z4═Z5—, wherein Z1, Z2 and Z3 represent O, S or the like and Z4 and Z5 represent N, B, P or the like, X1, X2, X3, X4, X9, X10, X11, and X12 represent a halogen atom or the like.
摘要:
A machine tool and pallet standby station using a crane for changing a pallet between a table or pallet mounting table (27) of the machine tool and the pallet standby station are provided. The table (27) includes a plurality of guide pins (31) having tapered front ends, a plurality of elevatable lift pins (35) having spherical front ends, and a plurality of taper cones (37) having tapered outer peripheral surfaces. On the other hand, the pallet (P) includes at least two brackets (39) attached so as to project in the side directions from the two side surfaces of the pallet, and each bracket is formed with a guide hole (41) into which a guide pin (31) is inserted for rough positioning of the pallet. Further, the bottom of the pallet (P) is formed with a plurality of locate holes (45) having tapered inner peripheral surfaces and engaging with the spherical front ends of the lift pins for precision positioning of the pallet and a plurality of taper holes (47) having shapes complementary with the taper cones (37) and engaging with the taper cones for final positioning of the pallet.
摘要:
Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more.