公开(公告)号：US06888156B2

公开(公告)日：2005-05-03

申请号：US10179006

申请日：2002-06-26

申请人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Young Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

发明人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Young Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/06 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L21/0328

CPC分类号： H01L21/02381 ,  H01L21/02472 ,  H01L21/02474 ,  H01L21/02491 ,  H01L21/0254

摘要： The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

摘要翻译： 本发明提供了一种薄膜器件，其中通过适当的缓冲层在Si单晶衬底上外延生长离子晶体及其制造方法。 首先将ZnS层沉积在Si单晶衬底上。 在其上沉积离子晶体薄膜（n-GaN层，GaN层和p-GaN层）。 ZnS薄膜是结晶性优异且表面平坦性优异的取向膜。 当ZnS可以在Si单晶衬底上一次外延生长时，离子晶体薄膜随后可以容易地外延生长。 因此，ZnS形成为缓冲层，由此，即使在Si单晶衬底上具有很少晶格缺陷的外延薄膜中也可以容易地外延生长与Si的晶格常数不同的离子晶体。 可以提高利用它的薄膜器件的特性。

公开(公告)号：US20050179034A1

公开(公告)日：2005-08-18

申请号：US11097186

申请日：2005-04-04

申请人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

发明人： Toyohiro Chikyow ,  Hideomi Koinuma ,  Masashi Kawasaki ,  Yoo Zo ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/10

CPC分类号： H01L21/02381 ,  H01L21/02472 ,  H01L21/02474 ,  H01L21/02491 ,  H01L21/0254

摘要： The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.

摘要翻译： 本发明提供了一种薄膜器件，其中通过适当的缓冲层在Si单晶衬底上外延生长离子晶体及其制造方法。 首先将ZnS层沉积在Si单晶衬底上。 在其上沉积离子晶体薄膜（n-GaN层，GaN层和p-GaN层）。 ZnS薄膜是结晶性优异且表面平坦性优异的取向膜。 当ZnS可以在Si单晶衬底上一次外延生长时，离子晶体薄膜随后可以容易地外延生长。 因此，ZnS形成为缓冲层，由此，即使在Si单晶衬底上具有很少晶格缺陷的外延薄膜中也可以容易地外延生长与Si的晶格常数不同的离子晶体。 可以提高利用它的薄膜器件的特性。

公开(公告)号：US06855972B2

公开(公告)日：2005-02-15

申请号：US10166055

申请日：2002-06-11

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Toyohiro Chikyow ,  Yoshiyuki Yonezawa ,  Yoshinori Konishi

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Toyohiro Chikyow ,  Yoshiyuki Yonezawa ,  Yoshinori Konishi

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L25/18 ,  H01L27/04 ,  H01L27/06 ,  H01L31/119 ,  H01L29/00

CPC分类号： H01L27/0694 ,  H01G4/33 ,  H01G4/40 ,  H01L21/31691 ,  H01L21/8221

摘要： A composite integrated circuit is characterized in that to put an oxide thin film into practical use as an electronic device, a highly crystalline oxide thin film is grown on a silicon substrate. A MOS circuit and a thin film capacitor are formed independently, and the two substrates are laminated using an epoxy resin. They are connected through buried wiring, thereby constituting a composite circuit package. As a second substrate 1a, a (110) plane orientation silicon substrate is used which differs from the IC substrate with a (100) plane. On the (110) silicon substrate after the termination processing, a dielectric layer is film deposited, followed by forming an upper electrode, and by forming a thin film coil. Insulating magnetic gel is filled between coil wires and its upper portion. Thus, the fabrication process of the thin film coil and the composite integrated circuit is completed.

摘要翻译： 复合集成电路的特征在于，为了将氧化物薄膜实际用作电子器件，在硅衬底上生长高结晶氧化物薄膜。 独立地形成MOS电路和薄膜电容器，并且使用环氧树脂层压两个基板。 它们通过埋地布线连接，从而构成复合电路封装。 作为第二基板1a，使用与（100）面的IC基板不同的（110）面取向硅基板。 在终止处理后的（110）硅衬底上，将电介质层膜沉积，然后形成上电极，并形成薄膜线圈。 绝缘磁性凝胶填充在线圈线及其上部之间。 因此，完成了薄膜线圈和复合集成电路的制造工艺。

公开(公告)号：US20140060887A1

公开(公告)日：2014-03-06

申请号：US14113774

申请日：2012-04-26

申请人： Laura Jane Singh ,  David Nicolas ,  Toyohiro Chikyow ,  Seunghwan Park ,  Naoto Umezawa

发明人： Laura Jane Singh ,  David Nicolas ,  Toyohiro Chikyow ,  Seunghwan Park ,  Naoto Umezawa

IPC分类号： H01B1/08 ,  H01B13/00

CPC分类号： H01B1/08 ,  H01B13/0036 ,  H01L31/022466 ,  H01L33/42 ,  H01L51/442 ,  H01L51/5206 ,  H01L2251/305 ,  H01L2924/0002 ,  H05B33/28 ,  H01L2924/00

摘要： A transparent electric conductor includes titanium oxide doped with aluminum and at least one other dopant: either in the form Ti1-a-bAlaXbOy, where X is a dopant or a mixture of dopants selected from the group consisting of Nb, Ta, W, Mo, V, Cr, Fe, Zr, Co, Sn, Mn, Er, Ni, Cu, Zn and Sc, a is in the range 0.01 to 0.50, and b is in the range 0.01 to 0.15; or in the form Ti1-aAlaFcOy-c, where a is in the range 0.01 to 0.50, and c is in the range 0.01 to 0.10. With the above composition, the electrical conductivity and the light transmittance are suitable for use of the transparent electric conductor in various applications, in particular as a transparent electrode of an electronic device.

摘要翻译： 透明电导体包括掺杂有铝和至少一种其它掺杂剂的氧化钛：Ti1-a-bAlaXbOy形式，其中X是掺杂剂或掺杂剂的混合物，其选自Nb，Ta，W，Mo ，V，Cr，Fe，Zr，Co，Sn，Mn，Er，Ni，Cu，Zn和Sc，a在0.01〜0.50的范围内，b在0.01〜0.15的范围内; 或以Ti1-aAlaFcOy-c形式，其中a在0.01至0.50的范围内，c在0.01至0.10的范围内。 利用上述组成，导电性和透光率适用于各种应用中的透明导电体，特别是作为电子器件的透明电极。