公开(公告)号：US08198173B2

公开(公告)日：2012-06-12

申请号：US12910320

申请日：2010-10-22

申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

IPC分类号： H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

公开(公告)号：US07829432B2

公开(公告)日：2010-11-09

申请号：US12489594

申请日：2009-06-23

申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

公开(公告)号：US07727846B2

公开(公告)日：2010-06-01

申请号：US12213137

申请日：2008-06-16

申请人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

发明人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78654

摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.

摘要翻译： 本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或 并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。 将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。 半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。 此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

公开(公告)号：US08361873B2

公开(公告)日：2013-01-29

申请号：US12762600

申请日：2010-04-19

申请人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

发明人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78654

摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.

公开(公告)号：US08598013B2

公开(公告)日：2013-12-03

申请号：US12247470

申请日：2008-10-08

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.

摘要翻译： 为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。 通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。 通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

公开(公告)号：US20090004764A1

公开(公告)日：2009-01-01

申请号：US12213510

申请日：2008-06-20

申请人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

发明人： Hideto Ohnuma ,  Ryota Imahayashi ,  Yoichi Iikubo ,  Kenichiro Makino ,  Sho Nagamatsu

IPC分类号： H01L21/782 ,  H01L33/00 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a single-crystal semiconductor layer which is suitable for practical use even when a substrate of which heat-resistant temperature is low, such as a glass substrate, is used, and to manufacture a highly reliable semiconductor device using such an SOI substrate. A semiconductor layer, which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface, is heated by supplying high energy by using at least one kind of particles having the high energy, and polishing treatment is performed on the heated surface of the semiconductor layer. At least part of a region of the semiconductor layer can be melted by the heat treatment by supplying high energy to reduce crystal defects in the semiconductor layer. Further, the surface of the semiconductor layer can be polished and planarized by the polishing treatment.

摘要翻译： 为了提供一种制造具有单晶半导体层的SOI衬底的方法，即使使用诸如玻璃衬底的耐热温度低的衬底也适用于实际使用，并且制造高度 使用这种SOI衬底的可靠的半导体器件。 通过使用至少一种具有高能量的颗粒提供高能量来加热与半导体衬底分离并结合到具有绝缘表面的支撑衬底的半导体层，并且对被加热表面进行抛光处理 的半导体层。 半导体层的区域的至少一部分可以通过提供高能量的热处理而熔化，以减少半导体层中的晶体缺陷。 此外，可以通过抛光处理对半导体层的表面进行抛光和平坦化。

公开(公告)号：US07767542B2

公开(公告)日：2010-08-03

申请号：US12078091

申请日：2008-03-27

申请人： Hideto Ohnuma ,  Yoichi Iikubo ,  Takayoshi Sato

发明人： Hideto Ohnuma ,  Yoichi Iikubo ,  Takayoshi Sato

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76259 ,  H01L27/1214 ,  H01L29/66772

摘要： There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in a region at a certain depth from a surface of a semiconductor substrate, and a first heat treatment is conducted when a semiconductor layer on the separation layer is bonded to the supporting substrate and separated. A second heat treatment is conducted to the supporting substrate to which the semiconductor layer is bonded. The second heat treatment is conducted at a temperature which is equal to or higher than the temperature of the first heat treatment and does not exceed a strain point of the supporting substrate. When the first heat treatment and the second heat treatment are conducted at the same temperature, a treatment time of the second heat treatment may be set to be longer.

摘要翻译： 提供了制造SOI衬底的方法，即使使用具有低允许温度极限的支撑衬底也是可行的。 在与半导体衬底的表面一定深度的区域中形成分离层，并且当分离层上的半导体层结合到支撑衬底上并分离时，进行第一热处理。 对与半导体层接合的支撑基板进行第二热处理。 第二热处理在等于或高于第一热处理的温度的温度下进行，并且不超过支撑基板的应变点。 当在相同温度下进行第一热处理和第二热处理时，可以将第二热处理的处理时间设定得更长。

公开(公告)号：US08823063B2

公开(公告)日：2014-09-02

申请号：US13267024

申请日：2011-10-06

申请人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Yoichi Iikubo

发明人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Yoichi Iikubo

IPC分类号： H01L29/772 ,  H01L29/04

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

摘要翻译： 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

公开(公告)号：US08034694B2

公开(公告)日：2011-10-11

申请号：US12073741

申请日：2008-03-10

申请人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Yoichi Iikubo

发明人： Hideto Ohnuma ,  Tetsuya Kakehata ,  Yoichi Iikubo

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/322

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

摘要翻译： 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

公开(公告)号：US07955949B2

公开(公告)日：2011-06-07

申请号：US12829409

申请日：2010-07-02

申请人： Hideto Ohnuma ,  Yoichi Iikubo ,  Takayoshi Sato

发明人： Hideto Ohnuma ,  Yoichi Iikubo ,  Takayoshi Sato

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76259 ,  H01L27/1214 ,  H01L29/66772

摘要： There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in a region at a certain depth from a surface of a semiconductor substrate, and a first heat treatment is conducted when a semiconductor layer on the separation layer is bonded to the supporting substrate and separated. A second heat treatment is conducted to the supporting substrate to which the semiconductor layer is bonded. The second heat treatment is conducted at a temperature which is equal to or higher than the temperature of the first heat treatment and does not exceed a strain point of the supporting substrate. When the first heat treatment and the second heat treatment are conducted at the same temperature, a treatment time of the second heat treatment may be set to be longer.

摘要翻译： 提供了制造SOI衬底的方法，即使使用具有低允许温度极限的支撑衬底也是可行的。 在与半导体衬底的表面一定深度的区域中形成分离层，并且当分离层上的半导体层结合到支撑衬底上并分离时，进行第一热处理。 对与半导体层接合的支撑基板进行第二热处理。 第二热处理在等于或高于第一热处理的温度的温度下进行，并且不超过支撑基板的应变点。 当在相同温度下进行第一热处理和第二热处理时，可以将第二热处理的处理时间设定得更长。