公开(公告)号：US08598013B2

公开(公告)日：2013-12-03

申请号：US12247470

申请日：2008-10-08

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Yoichi Iikubo ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.

摘要翻译： 为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。 通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。 通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

公开(公告)号：US08030169B2

公开(公告)日：2011-10-04

申请号：US12497720

申请日：2009-07-06

申请人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L21/762

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US08633542B2

公开(公告)日：2014-01-21

申请号：US13230086

申请日：2011-09-12

申请人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

发明人： Tetsuya Kakehata ,  Hideto Ohnuma ,  Yoshiaki Yamamoto ,  Kenichiro Makino

IPC分类号： H01L27/12 ,  H01L29/02

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

公开(公告)号：US20070200112A1

公开(公告)日：2007-08-30

申请号：US11707414

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L51/5278 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/5012 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.

摘要翻译： 本发明的目的是提供一种具有高电流效率和高显示质量的发光器件，其中抑制亮度随时间的变化。 发光装置设置有多个发光元件，其中每个包括至少一个发光层的多个发光单元串联连接在一对电极之间。 在一个发光单元和另一个发光单元之间，在发光单元中设置中间导电层。 发光层包括作为含有属于组2的元素和属于第16族的元素的化合物或含有属于第12族的元素和属于第16族的元素的化合物的基质材料，以及杂质元素是 排放中心。 这种结构使得可以在不增加电流密度的情况下增加发光亮度。

公开(公告)号：US07736964B2

公开(公告)日：2010-06-15

申请号：US11274904

申请日：2005-11-16

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US07528418B2

公开(公告)日：2009-05-05

申请号：US11707414

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takahiro Kawakami ,  Yoshiaki Yamamoto ,  Miki Katayama ,  Kohei Yokoyama ,  Yasuyuki Arai

IPC分类号： H01L33/00

CPC分类号： H01L51/5278 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/5012 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elements in each of which a plurality of light-emitting units each including at least one light-emitting layer are connected in series between a pair of electrodes. Between one of light-emitting units and the other light-emitting unit, an intermediate conductive layer is provided in the light-emitting unit. The light-emitting layer includes base material which is a compound containing an element belonging to group 2 and an element belonging to group 16 or a compound containing an element belonging to group 12 and an element belonging to group 16, and an impurity element which is an emission center. This structure makes it possible to increase light emission luminance without increasing current density.

摘要翻译： 本发明的目的是提供一种具有高电流效率和高显示质量的发光器件，其中抑制亮度随时间的变化。 发光装置设置有多个发光元件，其中每个包括至少一个发光层的多个发光单元串联连接在一对电极之间。 在一个发光单元和另一个发光单元之间，在发光单元中设置中间导电层。 发光层包括作为含有属于组2的元素和属于第16族的元素的化合物或含有属于第12族的元素和属于第16族的元素的化合物的基质材料，以及杂质元素是 排放中心。 这种结构使得可以在不增加电流密度的情况下增加发光亮度。

公开(公告)号：US08546210B2

公开(公告)日：2013-10-01

申请号：US12794120

申请日：2010-06-04

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US20060110863A1

公开(公告)日：2006-05-25

申请号：US11274904

申请日：2005-11-16

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/84 ,  H01L21/30

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US09037289B2

公开(公告)日：2015-05-19

申请号：US13252353

申请日：2011-10-04

申请人： Takashi Suyama ,  Junichi Imatome ,  Toru Kajiwara ,  Yoshiaki Yamamoto

发明人： Takashi Suyama ,  Junichi Imatome ,  Toru Kajiwara ,  Yoshiaki Yamamoto

IPC分类号： G06F7/00 ,  B65B5/10 ,  B25J9/00 ,  B65B5/08 ,  B65B35/18 ,  B65B43/46 ,  B65B55/20

CPC分类号： B65B5/105 ,  B25J9/0084 ,  B25J9/0087 ,  B25J9/0093 ,  B65B5/08 ,  B65B35/18 ,  B65B43/46 ,  B65B55/20

摘要： A processing system according to embodiments has an article supplier which supplies an article; a first conveyor which conveys an object to be processed; a workbench which is provided on the downstream side of the first conveyor and places thereon the object to be processed, conveyed by the first conveyor; a robot which takes out the article from the article supplier and subjects the object to be processed, placed on the workbench, to an operation using the article according to a previously instructed operation movement; and a second conveyor which is provided on the downstream side of the workbench and conveys the object to be processed, which has been subjected to the operation by the robot.

摘要翻译： 根据实施例的处理系统具有供应物品的物品供应商; 传送待加工物体的第一输送机; 工作台，其设置在第一输送机的下游侧，并在其上放置由第一输送机输送的待处理物体; 机器人，其从文章供应商取出物品，并将放置在工作台上的待处理物体根据先前指示的操作运动进行使用该物品的操作; 以及设置在工作台的下游侧并输送被机器人进行了操作的待处理物体的第二输送机。

公开(公告)号：US08304373B2

公开(公告)日：2012-11-06

申请号：US10535495

申请日：2003-11-20

申请人： Yoshiaki Yamamoto

发明人： Yoshiaki Yamamoto

IPC分类号： C10M141/00 ,  C10M157/00

CPC分类号： C10M111/06 ,  C10M169/04 ,  C10M2201/053 ,  C10M2201/085 ,  C10M2205/022 ,  C10M2205/0225 ,  C10M2205/14 ,  C10M2205/143 ,  C10M2205/16 ,  C10M2205/163 ,  C10M2207/126 ,  C10M2207/281 ,  C10M2207/283 ,  C10M2207/289 ,  C10M2213/062 ,  C10M2215/08 ,  C10M2215/0806 ,  C10M2215/2203 ,  C10M2215/221 ,  C10M2215/222 ,  C10M2215/2225 ,  C10N2210/01 ,  C10N2210/02 ,  C10N2230/06 ,  C10N2230/08 ,  C10N2250/08 ,  C10N2250/18 ,  F16C33/201

摘要： A solid lubricant for being embedded in pores or grooves formed at a sliding surface of a sliding member body, comprises 5 to 30% by volume of a polyethylene resin, 20 to 60% by volume of a hydrocarbon-based wax and 10 to 60% by volume of melamine cyanurate. Such a solid lubricant can exhibit sliding properties identical to or higher than those of lead-containing solid lubricants, even under high load conditions.

摘要翻译： 用于嵌入在滑动构件主体的滑动表面形成的孔或槽中的固体润滑剂包含5至30体积％的聚乙烯树脂，20至60体积％的烃类蜡和10至60体积％ 的氰尿酸三聚氰胺。 这样的固体润滑剂即使在高负载条件下也能够显示与含铅固体润滑剂相同或更高的滑动性能。