摘要:
A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要:
A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要:
A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要:
A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要:
A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要:
A CAM unit has a memory array for storing storage data, and a RAM unit has a memory array for storing the same storage data and check bits added thereto for determining whether the storage data in its memory array has an error. An error correction circuit uses the check bits to correct any error of data read from the memory array of the RAM unit and rewrite the error-corrected data to the memory arrays. Even if a soft error occurs in the storage data, the check bits can be used to correct the error in the data and rewrite the error-corrected data. Thus, a matching comparison can be performed on the storage data with high reliability.
摘要:
In a parallel operational processing device having an operational processing unit arranged between memory blocks each having a plurality of memory cells arranged in rows and columns, the respective columns of each memory block are alternately connected to the operational processing units on the opposite sides of the memory block. By selecting one word line in one memory block, data can be transferred to two operational processing units. The number of the word lines selected per one operational processing unit is reduced, and power consumption is reduced. The bit operation units and sense amplifiers/write drivers of the operational processing units have arrangement pitch conditions mitigated and are reduced in number, and an isolation region between the memory blocks is not required and the layout area is reduced. Thus, the parallel operational processing device with a layout area and the power consumption reduced, can achieve a fast operation.
摘要:
A CAM unit has a memory array for storing storage data, and a RAM unit has a memory array for storing the same storage data and check bits added thereto for determining whether the storage data in its memory array has an error. An error correction circuit uses the check bits to correct any error of data read from the memory array of the RAM unit and rewrite the error-corrected data to the memory arrays. Even if a soft error occurs in the storage data, the check bits can be used to correct the error in the data and rewrite the error-corrected data. Thus, a matching comparison can be performed on the storage data with high reliability.
摘要:
In a memory circuit, a transistor formed in the same process as that of a logic transistor is used for peripheral circuitry except for a region to be supplied with high voltage. Thus, the manufacturing process can be simplified and a logic-merged memory operating at a high speed is provided.
摘要:
A CAM (Content Addressable Memory) cell includes first and second data storage portions storing data, horizontal port write gates for storing data applied through a match line pair in the data storage portions in a data write through a horizontal port, and search/read gates for driving the match lines of the match line pair in accordance with the data stored in the data storage portions in a search operation and in a data read through the horizontal port. The match lines are used as horizontal bit line pair, or signal lines for accessing the horizontal port. As the first and second data storage portions are used, it becomes possible to store ternary data, and accordingly, a write mask function of inhibiting a data write at a destination of data transfer is realized. Further, as the CAM cell is used, an arithmetic/logic operation following a search process can be executed selectively, and high speed data writing/reading becomes possible.