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    Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit
    1.
    发明授权
    Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit 有权
    具有存储功能的晶体管电路，以及包括传输晶体管电路的开关盒电路

    公开(公告)号：US08405443B2

    公开(公告)日：2013-03-26

    申请号：US13419555

    申请日：2012-03-14

    申请人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    发明人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    IPC分类号： H03K17/687

    CPC分类号： H01L27/112 ,  H03K19/17736

    摘要： A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.

    摘要翻译： 根据实施例的传输晶体管电路包括：连接到第一信号线的第一输入/输出端子; 连接到第二信号线的第二输入/输出端子; 第一装置，具有连接到第一电源和第二端子的第一端子; 第二装置，具有连接到第二端子的第三端子和连接到第二电源的第四端子; 第一晶体管，其源极/漏极中的一个连接到第二端子，栅极接收第一控制信号; 以及第二晶体管，其栅极连接到第一晶体管的源极/漏极中的另一个，栅极/漏极中的一个连接到第一输入/输出端子，另一个源极/漏极连接到第二输入/输出端 终奌站。 第一和第二器件中的一个是非易失性存储器件，第一和第二器件中的另一个是MOSFET。

    PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIRCUIT INCLUDING THE PASS TRANSISTOR CIRCUIT
    3.
    发明申请
    PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIRCUIT INCLUDING THE PASS TRANSISTOR CIRCUIT 有权
    具有存储器功能的通用晶体管电路，以及包括通过晶体管电路的开关盒电路

    公开(公告)号：US20120223762A1

    公开(公告)日：2012-09-06

    申请号：US13419555

    申请日：2012-03-14

    申请人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    发明人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    IPC分类号： H03K17/00

    CPC分类号： H01L27/112 ,  H03K19/17736

    摘要： A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.

    摘要翻译： 根据实施例的传输晶体管电路包括：连接到第一信号线的第一输入/输出端子; 连接到第二信号线的第二输入/输出端子; 第一装置，具有连接到第一电源和第二端子的第一端子; 第二装置，具有连接到第二端子的第三端子和连接到第二电源的第四端子; 第一晶体管，其源极/漏极中的一个连接到第二端子，栅极接收第一控制信号; 以及第二晶体管，其栅极连接到第一晶体管的源极/漏极中的另一个，栅极/漏极中的一个连接到第一输入/输出端子，另一个源极/漏极连接到第二输入/输出端 终奌站。 第一和第二器件中的一个是非易失性存储器件，第一和第二器件中的另一个是MOSFET。

    SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT USING THE SPIN MOSFET
    6.
    发明申请
    SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT USING THE SPIN MOSFET 有权
    旋转MOSFET和使用旋转MOSFET的可重新配置的逻辑电路

    公开(公告)号：US20100019798A1

    公开(公告)日：2010-01-28

    申请号：US12486999

    申请日：2009-06-18

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Mizue Ishikawa ,  Takao Marukame

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Mizue Ishikawa ,  Takao Marukame

    IPC分类号： H03K19/0944 ,  H01L29/00

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F10/3272 ,  H01F10/3286

    摘要： It is made possible to provide a spin MOSFET that can minimize the increase in production costs and can perform both spin injection writing and reading. A spin MOSFET includes: a substrate that has a semiconductor region of a first conductivity type; first and second ferromagnetic stacked films that are formed at a distance from each other on the semiconductor region, and each have the same stacked structure comprising a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer stacked in this order, the second ferromagnetic stacked film having a film-plane area different from that of the first ferromagnetic stacked film; a gate insulating film that is formed on a portion of the semiconductor region, the portion being located between the first ferromagnetic stacked film and the second ferromagnetic stacked film; and a gate that is formed on the gate insulating film.

    摘要翻译： 可以提供一种可以使生产成本增加最小化的自旋MOSFET，并且可以执行自动注入写入和读取两种操作。 自旋MOSFET包括：具有第一导电类型的半导体区域的衬底; 第一和第二铁磁层叠膜，其形成在半导体区域上彼此间隔一定距离处，并且各自具有包括依次层叠的第一铁磁层，非磁性层和第二铁磁层的相同层叠结构，第二铁磁体 具有与第一铁磁性层叠膜不同的膜面积的层叠膜; 形成在所述半导体区域的一部分上的所述栅绝缘膜，所述栅极绝缘膜位于所述第一铁磁层叠膜和所述第二铁磁性堆叠膜之间; 以及形成在栅极绝缘膜上的栅极。

    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
    7.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
    磁电效应元件和磁记忆

    公开(公告)号：US20090244960A1

    公开(公告)日：2009-10-01

    申请号：US12481726

    申请日：2009-06-10

    申请人： Yoshiaki SAITO ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki SAITO ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： G11C11/15

    CPC分类号： G11C11/15 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/08

    摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.

    摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。 磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层 磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域 自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。

    Spin-injection FET
    8.
    发明授权
    Spin-injection FET 有权
    自旋注入FET

    公开(公告)号：US07248497B2

    公开(公告)日：2007-07-24

    申请号：US11626285

    申请日：2007-01-23

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/115 ,  H01L29/66984 ,  H01L29/7881

    摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.

    摘要翻译： 自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一和第二铁磁体之间的通道上的栅极，第一铁磁体， 驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线，辅助电流产生磁 第二铁磁体的磁化容易轴方向的第二驱动器/沉降片，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。

    SPIN-INJECTION FET
    9.
    发明申请
    SPIN-INJECTION FET 有权
    旋转注入FET

    公开(公告)号：US20070115716A1

    公开(公告)日：2007-05-24

    申请号：US11626285

    申请日：2007-01-23

    申请人： Yoshiaki SAITO ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki SAITO ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/115 ,  H01L29/66984 ,  H01L29/7881

    摘要： An spin-injection FET according to an embodiment of the invention includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.

    摘要翻译： 根据本发明的实施例的自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一 和第二铁磁体，第一驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线 辅助电流产生第二铁磁体的磁化容易轴方向的磁场，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。

    Spin-injection FET
    10.
    发明授权
    Spin-injection FET 有权

    公开(公告)号：US07200037B2

    公开(公告)日：2007-04-03

    申请号：US11255101

    申请日：2005-10-21

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/115 ,  H01L29/66984 ,  H01L29/7881

    摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.