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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120168838A1

    公开(公告)日：2012-07-05

    申请号：US13419947

    申请日：2012-03-14

    申请人： Takao MARUKAME ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Hideyuki Sugiyama ,  Yoshiaki Saito

    发明人： Takao MARUKAME ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Hideyuki Sugiyama ,  Yoshiaki Saito

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L29/66984 ,  H01L21/823814 ,  H01L21/84 ,  H01L21/845 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/49 ,  H01L29/66075

    摘要： A semiconductor device according to an embodiment includes: a semiconductor layer; source and drain regions in the semiconductor layer; a magnetic metal semiconductor compound film on each of the source and drain regions, the magnetic metal semiconductor compound film including the same semiconductor as a semiconductor of the semiconductor layer and a magnetic metal; a gate insulating film on the semiconductor layer between the source region and the drain region; a gate electrode on the gate insulating film; a gate sidewall formed at a side portion of the gate electrode, the gate sidewall being made of an insulating material; a film stack formed on the magnetic metal semiconductor compound film on each of the source and drain regions, the film stack including a magnetic layer; and an oxide layer formed on the gate sidewall, the oxide layer containing the same element as an element in the film stack.

    摘要翻译： 根据实施例的半导体器件包括：半导体层; 半导体层中的源极和漏极区域; 在源极和漏极区域中的每一个上的磁性金属半导体化合物膜，包括与半导体层的半导体相同的半导体的磁性金属半导体化合物膜和磁性金属; 源极区域和漏极区域之间的半导体层上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 栅极侧壁，其形成在所述栅电极的侧部，所述栅极侧壁由绝缘材料制成; 在所述源极和漏极区域中的每一个上形成在所述磁性金属半导体化合物膜上的膜堆叠，所述膜堆叠包括磁性层; 以及形成在栅极侧壁上的氧化物层，所述氧化物层包含与膜堆叠中的元件相同的元件。

    Spin MOSFET and reconfigurable logic circuit
    6.
    发明授权
    Spin MOSFET and reconfigurable logic circuit 有权
    旋转MOSFET和可重构逻辑电路

    公开(公告)号：US08026561B2

    公开(公告)日：2011-09-27

    申请号：US12725561

    申请日：2010-03-17

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa

    IPC分类号： H01L21/02

    CPC分类号： H01L43/02 ,  B01D53/1493 ,  B01D53/62 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L28/00 ,  H01L29/0843 ,  H01L29/0895 ,  H01L29/66984 ,  H01L43/10

    摘要： A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower face and the upper face; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on an upper face of the second ferromagnetic layer; a third ferromagnetic layer provided on an upper face of the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween.

    摘要翻译： 自旋MOSFET包括：设置在半导体衬底的上表面上并且具有与膜平面垂直的固定磁化方向的第一铁磁层; 设置在所述第一铁磁层的上表面上的半导体层，包括与所述第一铁磁层的上表面相对的下表面，与所述下表面相对的上表面，以及与所述下表面和所述上表面不同的侧面 ; 第二铁磁层，设置在所述半导体层的上表面上，并且具有与膜平面垂直的可变磁化方向; 设置在所述第二铁磁层的上表面上的第一隧道势垒; 设置在所述第一隧道屏障的上表面上的第三铁磁层; 设置在所述半导体层的侧面上的栅极绝缘膜; 以及设置在半导体层的侧面上的栅电极，其间插入有栅极绝缘膜。

    Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit
    7.
    发明授权
    Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit 有权
    具有存储功能的晶体管电路，以及包括传输晶体管电路的开关盒电路

    公开(公告)号：US08405443B2

    公开(公告)日：2013-03-26

    申请号：US13419555

    申请日：2012-03-14

    申请人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    发明人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    IPC分类号： H03K17/687

    CPC分类号： H01L27/112 ,  H03K19/17736

    摘要： A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.

    摘要翻译： 根据实施例的传输晶体管电路包括：连接到第一信号线的第一输入/输出端子; 连接到第二信号线的第二输入/输出端子; 第一装置，具有连接到第一电源和第二端子的第一端子; 第二装置，具有连接到第二端子的第三端子和连接到第二电源的第四端子; 第一晶体管，其源极/漏极中的一个连接到第二端子，栅极接收第一控制信号; 以及第二晶体管，其栅极连接到第一晶体管的源极/漏极中的另一个，栅极/漏极中的一个连接到第一输入/输出端子，另一个源极/漏极连接到第二输入/输出端 终奌站。 第一和第二器件中的一个是非易失性存储器件，第一和第二器件中的另一个是MOSFET。

    PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIRCUIT INCLUDING THE PASS TRANSISTOR CIRCUIT
    8.
    发明申请
    PASS TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, AND SWITCHING BOX CIRCUIT INCLUDING THE PASS TRANSISTOR CIRCUIT 有权
    具有存储器功能的通用晶体管电路，以及包括通过晶体管电路的开关盒电路

    公开(公告)号：US20120223762A1

    公开(公告)日：2012-09-06

    申请号：US13419555

    申请日：2012-03-14

    申请人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    发明人： Hideyuki Sugiyama ,  Tetsufumi Tanamoto ,  Takao Marukame ,  Mizue Ishikawa ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    IPC分类号： H03K17/00

    CPC分类号： H01L27/112 ,  H03K19/17736

    摘要： A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.

    摘要翻译： 根据实施例的传输晶体管电路包括：连接到第一信号线的第一输入/输出端子; 连接到第二信号线的第二输入/输出端子; 第一装置，具有连接到第一电源和第二端子的第一端子; 第二装置，具有连接到第二端子的第三端子和连接到第二电源的第四端子; 第一晶体管，其源极/漏极中的一个连接到第二端子，栅极接收第一控制信号; 以及第二晶体管，其栅极连接到第一晶体管的源极/漏极中的另一个，栅极/漏极中的一个连接到第一输入/输出端子，另一个源极/漏极连接到第二输入/输出端 终奌站。 第一和第二器件中的一个是非易失性存储器件，第一和第二器件中的另一个是MOSFET。

    SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT USING THE SPIN MOSFET
    9.
    发明申请
    SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT USING THE SPIN MOSFET 有权
    旋转MOSFET和使用旋转MOSFET的可重新配置的逻辑电路

    公开(公告)号：US20100019798A1

    公开(公告)日：2010-01-28

    申请号：US12486999

    申请日：2009-06-18

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Mizue Ishikawa ,  Takao Marukame

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Mizue Ishikawa ,  Takao Marukame

    IPC分类号： H03K19/0944 ,  H01L29/00

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F10/3272 ,  H01F10/3286

    摘要： It is made possible to provide a spin MOSFET that can minimize the increase in production costs and can perform both spin injection writing and reading. A spin MOSFET includes: a substrate that has a semiconductor region of a first conductivity type; first and second ferromagnetic stacked films that are formed at a distance from each other on the semiconductor region, and each have the same stacked structure comprising a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer stacked in this order, the second ferromagnetic stacked film having a film-plane area different from that of the first ferromagnetic stacked film; a gate insulating film that is formed on a portion of the semiconductor region, the portion being located between the first ferromagnetic stacked film and the second ferromagnetic stacked film; and a gate that is formed on the gate insulating film.

    摘要翻译： 可以提供一种可以使生产成本增加最小化的自旋MOSFET，并且可以执行自动注入写入和读取两种操作。 自旋MOSFET包括：具有第一导电类型的半导体区域的衬底; 第一和第二铁磁层叠膜，其形成在半导体区域上彼此间隔一定距离处，并且各自具有包括依次层叠的第一铁磁层，非磁性层和第二铁磁层的相同层叠结构，第二铁磁体 具有与第一铁磁性层叠膜不同的膜面积的层叠膜; 形成在所述半导体区域的一部分上的所述栅绝缘膜，所述栅极绝缘膜位于所述第一铁磁层叠膜和所述第二铁磁性堆叠膜之间; 以及形成在栅极绝缘膜上的栅极。

    Spin transistor and memory
    10.
    发明授权
    Spin transistor and memory 有权
    旋转晶体管和存储器

    公开(公告)号：US09112139B2

    公开(公告)日：2015-08-18

    申请号：US13526007

    申请日：2012-06-18

    申请人： Tomoaki Inokuchi ,  Takao Marukame ,  Tetsufumi Tanamoto ,  Hideyuki Sugiyama ,  Mizue Ishikawa ,  Yoshiaki Saito

    发明人： Tomoaki Inokuchi ,  Takao Marukame ,  Tetsufumi Tanamoto ,  Hideyuki Sugiyama ,  Mizue Ishikawa ,  Yoshiaki Saito

    IPC分类号： H01L43/08 ,  H01L29/66

    CPC分类号： H01L43/08 ,  H01L29/66984

    摘要： A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.

    摘要翻译： 根据实施例的自旋晶体管包括：形成在衬底上并用作源极和漏极之一的第一磁性层; 绝缘膜，其具有面向第一磁性层的上表面的下表面，与下表面相对的上表面，以及不同于下表面和上表面的侧面，绝缘膜形成在第一磁性层的上表面上 第一磁性层，作为通道; 第二磁性层，形成在绝缘膜的上表面上并用作源极和漏极中的另一个; 沿绝缘膜的侧面形成的栅电极; 以及位于绝缘膜的栅极和侧面之间的栅极绝缘膜。