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公开(公告)号:US20050124518A1
公开(公告)日:2005-06-09
申请号:US11037521
申请日:2005-01-18
申请人: Hiroaki Sugimoto , Seiichiro Okuda , Takuya Kuroda
发明人: Hiroaki Sugimoto , Seiichiro Okuda , Takuya Kuroda
IPC分类号: B08B5/00 , B08B3/02 , B08B3/08 , B08B7/00 , H01L21/304 , H01L21/306 , C11D1/00
CPC分类号: H01L21/02052 , B08B3/02
摘要: A substrate treating apparatus includes a cleaning medium feed mechanism having a discharge nozzle for discharging warm water as a cleaning medium toward a substrate. The discharge nozzle is reciprocable between a position opposed to the center of rotation of the substrate held and rotated by a spin chuck and a position opposed to the edge of the substrate. The discharge nozzle is connected to a deionized water source through a solenoid valve and a heater. Deionized water fed from the deionized water source is heated warm and supplied to the substrate through the discharge nozzle.
摘要翻译: 基板处理装置包括具有用于将温水作为清洁介质朝向基板排出的排出喷嘴的清洗介质供给机构。 排出喷嘴可以在通过旋转卡盘保持和旋转的基板的旋转中心与与基板的边缘相对的位置相对的位置之间往复运动。 排放喷嘴通过电磁阀和加热器连接到去离子水源。 从去离子水源供给的去离子水被加温,并通过排出喷嘴供给到基材。
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公开(公告)号:US07267130B2
公开(公告)日:2007-09-11
申请号:US10836283
申请日:2004-05-03
申请人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
IPC分类号: B08B3/02
CPC分类号: H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
摘要翻译: 基板处理装置设置有气液混合喷嘴,用于通过混合液体和加压气体来产生处理液雾,以将处理液雾以高速排放到基板。 液体可以是去除液体,中间漂洗液体或去离子水。 在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除,从而提高了工艺的质量。
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公开(公告)号:US06951221B2
公开(公告)日:2005-10-04
申请号:US09957652
申请日:2001-09-21
申请人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
CPC分类号: H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
摘要翻译: 基板处理装置设置有气液混合喷嘴,用于通过混合液体和加压气体来产生处理液雾,以将处理液雾以高速排放到基板。 液体可以是去除液体,中间漂洗液体或去离子水。 在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除,从而提高了工艺的质量。
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公开(公告)号:US07479205B2
公开(公告)日:2009-01-20
申请号:US10841646
申请日:2004-05-10
申请人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
IPC分类号: H01L21/027 , H01L21/44
CPC分类号: H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288
摘要: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
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公开(公告)号:US07428907B2
公开(公告)日:2008-09-30
申请号:US10838926
申请日:2004-05-05
申请人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人: Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
IPC分类号: B08B3/02
CPC分类号: H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
摘要翻译: 基板处理装置设置有气液混合喷嘴,用于通过混合液体和加压气体来产生处理液雾,以将处理液雾以高速排放到基板。 液体可以是去除液体,中间漂洗液体或去离子水。 在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除,从而提高了工艺的质量。
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公开(公告)号:US06550988B2
公开(公告)日:2003-04-22
申请号:US09984533
申请日:2001-10-30
申请人: Hiroaki Sugimoto , Seiichiro Okuda , Takuya Kuroda
发明人: Hiroaki Sugimoto , Seiichiro Okuda , Takuya Kuroda
IPC分类号: G03D500
CPC分类号: H01L21/67051 , G03F7/3021 , H01L21/67028 , Y10S134/902
摘要: A removal liquid is supplied to a substrate on which a thin film formed is patterned by dry etching using a resist film as a mask, and cleaning is made with de-ionized water, thereby removing a reaction product generated on the surface of the substrate. After that, the processed substrate is heated, thereby completely drying the substrate from which the reaction product has been eliminated.
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公开(公告)号:US06805769B2
公开(公告)日:2004-10-19
申请号:US09973182
申请日:2001-10-10
申请人: Seiichiro Okuda , Hiroaki Sugimoto
发明人: Seiichiro Okuda , Hiroaki Sugimoto
IPC分类号: H01L21027
CPC分类号: B08B3/024
摘要: Reaction products produced under dry etching attach to a substrate undergoing dry etching. It is necessary to remove the reaction products for the next step. Therefore, in the case of the background art, the processing of supplying a remover for reaction products, an intermediate rinse for washing away the remover, and deionized water to a substrate in order is performed. The above processing is conventionally performed under an atmospheric atmosphere. Therefore, a thin film may be changed in quality due to atmospheric components. Therefore, a substrate processing apparatus of the present invention uses means for blowing nitrogen gas on a substrate and supplies a remover to the substrate while blowing nitrogen. Thereby, it is possible to prevent a thin film from being changed in quality due to atmospheric components.
摘要翻译: 在干蚀刻下生产的反应产物附着到经历干蚀刻的基底上。 需要除去下一步的反应产物。 因此,在背景技术的情况下,进行反应产物的除去剂的处理,将去除剂除去的中间漂洗液和去离子水按顺序排列到基板上。上述处理通常在大气环境下进行 。 因此,由于大气成分,薄膜的质量可能会改变。因此,本发明的基板处理装置使用在基板上吹氮气的装置,并在吹氮气的同时将去除剂供给到基板。 由此,可以防止由于大气成分而导致薄膜质量变化。
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公开(公告)号:US07418970B2
公开(公告)日:2008-09-02
申请号:US10740711
申请日:2003-12-18
IPC分类号: B08B3/00
CPC分类号: H01L21/67034 , Y10S134/902
摘要: A substrate processing apparatus includes a container in which a heating plate, a discharge nozzle for discharging a vapor of organic solvent, and a discharge nozzle for supplying a process gas and a cooling gas are provided. A pump in communication with an exhaust outlet of the container exhausts an atmosphere from the container to reduce pressure in the container. Therefore, the substrate processing apparatus is capable of performing (1) the process of drying a substrate in a reduced-pressure atmosphere by the use of the vapor of organic solvent, and (2) the process of drying the substrate in the reduced-pressure atmosphere by heating, to thereby efficiently dry the substrate.
摘要翻译: 基板处理装置包括:容器,其中设置有加热板,用于排出有机溶剂的蒸气的排出喷嘴和用于供给处理气体和冷却气体的排出喷嘴。 与容器的排气口连通的泵从容器排出气氛以减小容器中的压力。 因此,基板处理装置能够通过使用有机溶剂的蒸气来进行(1)在减压气氛中干燥基板的工序,(2)在减压下干燥基板的工序 通过加热,从而有效地干燥基板。
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公开(公告)号:US5762709A
公开(公告)日:1998-06-09
申请号:US680983
申请日:1996-07-16
CPC分类号: H01L21/6715 , B05C11/08
摘要: A substrate spin coating apparatus for forming a coating film on the upper surface of a spinning substrate includes a spin chuck for supporting and spinning the substrate while holding same substantially in horizontal posture. A scatter preventive cup surrounds lateral and lower regions of the spin chuck, and defines an opening in an upper central region thereof for allowing entry of air flows. An exhaust vent is provided for downwardly exhausting the air flows, and a nozzle is provided for supplying a coating solution through the opening of the scatter preventive cup to the upper surface of the substrate. The scatter preventive cup includes an air passage formed in a bottom region thereof and opening toward a lower surface of the substrate. An air flow adjusting unit is connected to the air passage for adjusting an air flow to a predetermined temperature and supplying the adjusted air flow to the air passage.
摘要翻译: 用于在纺丝基材的上表面上形成涂膜的基材旋涂装置包括:旋转卡盘,用于支撑和旋转基材,同时基本保持水平姿势。 散射防止杯围绕旋转卡盘的横向和下部区域,并且在其上部中心区域中限定开口以允许空气流进入。 设置有用于向下排出空气流的排气口,并且设置有用于通过散射防止杯的开口将涂布溶液供给到基板的上表面的喷嘴。 散射防止杯包括形成在其底部区域中并且朝向基板的下表面开口的空气通道。 气流调节单元连接到空气通道,用于将空气流调节到预定温度,并将经调节的空气流供应到空气通道。
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公开(公告)号:US6000862A
公开(公告)日:1999-12-14
申请号:US725846
申请日:1996-10-04
申请人: Seiichiro Okuda , Kenji Sugimoto
发明人: Seiichiro Okuda , Kenji Sugimoto
IPC分类号: H01L21/027 , B05C11/08 , G03F7/30 , G03D7/00 , G03D5/00
CPC分类号: B05C11/08 , G03F7/3021
摘要: A substrate developing method and apparatus for improving uniformity of a developing process by adjusting a temperature gradient of a developer spread over the surface of a substrate. The developer is delivered to a central region of the substrate surface and spread over the surface. The developer in this state has activity diminishing, and thereby lowering the developing rate, gradually from center to edge of the substrate. With a gas flowing down around the edge of the substrate during the developing process, the developer vaporizes from peripheral regions of the substrate at an increased rate, thereby lowering the developer temperature in the peripheral regions. This increases the developing rate gradually from edge to center of the substrate. The uniformity of the developing process is improved by balancing the gradient of developing rate due to the temperature variation of the developer against the gradient of developing rate due to the lowering of developer activity.
摘要翻译: 一种用于通过调节在衬底表面上展开的显影剂的温度梯度来改善显影过程的均匀性的衬底显影方法和装置。 显影剂被输送到基底表面的中心区域并且在表面上分布。 在这种状态下的显影剂的活性逐渐降低,从而降低了显影速率,从衬底的中心到边缘逐渐降低。 在显影过程中,气体沿着衬底的边缘向下流动,显影剂以增加的速率从衬底的周边区域蒸发,从而降低了周边区域中的显影剂温度。 这从基板的边缘到中心逐渐增加显影速率。 通过平衡由于显影剂活性降低引起的显影剂的温度变化与显影速率梯度的显影速率梯度的改善,改善了显影过程的均匀性。
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