公开(公告)号：US08575674B2

公开(公告)日：2013-11-05

申请号：US13264460

申请日：2010-04-15

申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

IPC分类号： H01L29/76

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co 2 FeAl x Si 1-x（0 @ x @ 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。

公开(公告)号：US20120112299A1

公开(公告)日：2012-05-10

申请号：US13321956

申请日：2010-05-07

申请人： Koichiro Inomata ,  Wenhong Wang ,  Hiroaki Sukegawa

发明人： Koichiro Inomata ,  Wenhong Wang ,  Hiroaki Sukegawa

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

摘要： For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co2FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co2FeAl having a smallest α though not a half-metal.

摘要翻译： 对于本铁磁隧道结结构，采用的是一种特征在于使用MgO阻挡层并使用Co2FeAl全Heusler合金作为其中的任何铁磁层的方法。 铁磁隧道结结构的特征在于，Co 2 FeAl特别包括B2结构，并且在Cr缓冲层上形成铁磁层之一。 磁阻元件的特征在于其中的铁磁隧道结结构是上述铁磁隧道结结构中的任一个。 因此，尽管不是半金属，但是使用具有最小α的Co 2 FeAl，可以获得大的TMR，特别是在室温下超过100％的TMR。

公开(公告)号：US08866243B2

公开(公告)日：2014-10-21

申请号：US13321956

申请日：2010-05-07

申请人： Koichiro Inomata ,  Wenhong Wang ,  Hiroaki Sukegawa

发明人： Koichiro Inomata ,  Wenhong Wang ,  Hiroaki Sukegawa

IPC分类号： H01L29/82 ,  H01F10/32 ,  G11B5/39 ,  B82Y25/00 ,  G01R33/09 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/10

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

摘要： For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co2FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co2FeAl having a smallest α though not a half-metal.

摘要翻译： 对于本铁磁隧道结结构，采用的是一种特征在于使用MgO阻挡层并使用Co2FeAl全Heusler合金作为其中的任何铁磁层的方法。 铁磁隧道结结构的特征在于，Co 2 FeAl特别包括B2结构，并且在Cr缓冲层上形成铁磁层之一。 磁阻元件的特征在于其中的铁磁隧道结结构是上述铁磁隧道结结构中的任一个。 因此，尽管不是半金属，但是使用具有最小α的Co 2 FeAl，可以获得大的TMR，特别是在室温下超过100％的TMR。

公开(公告)号：US20120091548A1

公开(公告)日：2012-04-19

申请号：US13264460

申请日：2010-04-15

申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co2FeAlxSi1-x（0＆nlE; x＆nlE; 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。

公开(公告)号：US20090015969A1

公开(公告)日：2009-01-15

申请号：US10589283

申请日：2005-02-08

申请人： Ryosuke Kainuma ,  Koichiro Inomata ,  Kiyohito Ishida

发明人： Ryosuke Kainuma ,  Koichiro Inomata ,  Kiyohito Ishida

IPC分类号： G11B5/33 ,  H01F1/00

CPC分类号： H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/324 ,  H01F10/3254 ,  H01L43/10 ,  Y10T428/1114

摘要： Magnetic thin film having high spin polarizability and a magnetoresistance effect device and a magnetic device using the same, provided with a substrate (2) and Co2MGa1-xAlx thin film (3) formed on the substrate (2), the Co2MGa1-xAlx thin film (3) has a L21 or B2 single phase structure, M of the thin film is either one or two or more of Ti, V, Mo, W, Cr, Mn, and Fe, an average valence electron concentration Z in M is 5.5≦Z≦7.5, and 0≦x≦0.7, shows ferromagnetism at room temperature, and can attain high spin polarizability. A buffer layer (4) may be inserted between the substrate (2) and the Co2FexCr1-xAl thin film (3). The tunnel magnetoresistance effect device and the giant magnetoresistance effect device using this magnetic thin film can attain large TMR and GMR at room temperature under the low magnetic field.

摘要翻译： 具有高自旋极化性的磁性薄膜和磁阻效应器件及使用该磁性器件的磁性器件，在基片（2）上形成有衬底（2）和Co2MGa1-xAlx薄膜（3），Co2MGa1-xAlx薄膜 （3）具有L21或B2单相结构，M的薄膜为Ti，V，Mo，W，Cr，Mn和Fe中的一种或两种以上，M中的平均价电子浓度Z为5.5 <= Z <= 7.5，0 <= x <= 0.7，在室温下显示出铁磁性，并且可以获得高的自旋极化性。 可以在衬底（2）和Co2FexCr1-xAl薄膜（3）之间插入缓冲层（4）。 使用这种磁性薄膜的隧道磁阻效应器件和巨磁阻效应器件可以在低磁场下在室温下获得大的TMR和GMR。

公开(公告)号：US20060060027A1

公开(公告)日：2006-03-23

申请号：US11258569

申请日：2005-10-25

申请人： Katsumi Okayama ,  Kaoru Kobayashi ,  Koichiro Inomata ,  Satoshi Sugimoto ,  Yoshihiro Kato

发明人： Katsumi Okayama ,  Kaoru Kobayashi ,  Koichiro Inomata ,  Satoshi Sugimoto ,  Yoshihiro Kato

IPC分类号： B22F9/24

CPC分类号： B82Y30/00 ,  B22F1/0018 ,  B22F1/0059 ,  B22F9/24 ,  B22F9/305 ,  B22F2998/00 ,  B82Y25/00 ,  B82Y40/00 ,  C22C32/0094 ,  H01F1/0054 ,  H01F41/30 ,  H01F41/301 ,  Y10S977/777 ,  Y10S977/783 ,  Y10T428/12146 ,  Y10T428/254 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/29 ,  Y10T428/2991 ,  Y10T428/2998 ,  B22F3/02

摘要： A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.

公开(公告)号：US6069820A

公开(公告)日：2000-05-30

申请号：US247300

申请日：1999-02-10

申请人： Koichiro Inomata ,  Yoshiaki Saito ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Yoshiaki Saito ,  Tatsuya Kishi

IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/33 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01L27/115 ,  H01L29/66 ,  H01L43/08 ,  G11C7/00

CPC分类号： H01L29/66984 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/332 ,  G11B5/3903 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/115 ,  H01L43/08

摘要： A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.

摘要翻译： 在磁性器件的铁磁层中引入离散的能级，并且隧道电流流过多个隧道结。 隧道结设置在第一和第二电极之间，第一铁磁层介于两个隧道结之间。 隧道电流的变化取决于铁磁层与另一铁磁层的磁化方向之间的关系。 隧道电流在平行关系和反平行关系之间变化。

公开(公告)号：US5700588A

公开(公告)日：1997-12-23

申请号：US613170

申请日：1996-03-08

申请人： Yoshiaki Saito ,  Shiho Okuno ,  Koichiro Inomata

发明人： Yoshiaki Saito ,  Shiho Okuno ,  Koichiro Inomata

IPC分类号： G01R33/09 ,  H01L43/10 ,  G11B5/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12632 ,  Y10T428/12875 ,  Y10T428/12896 ,  Y10T428/1291

摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.

摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 含有Fe，Co和Ni三种磁性元素的磁性层。 任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。

公开(公告)号：US5578385A

公开(公告)日：1996-11-26

申请号：US364524

申请日：1994-12-27

申请人： Yoshiaki Saito ,  Shiho Okuno ,  Koichiro Inomata

发明人： Yoshiaki Saito ,  Shiho Okuno ,  Koichiro Inomata

IPC分类号： G01R33/09 ,  H01L43/10 ,  G11B5/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12632 ,  Y10T428/12875 ,  Y10T428/12896 ,  Y10T428/1291

摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.

摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。 彼此相邻的两个磁性层，其间插入非磁性层之一，在基本不施加磁场的条件下进行反铁磁耦合。

公开(公告)号：US5071493A

公开(公告)日：1991-12-10

申请号：US470748

申请日：1990-01-26

申请人： Tetsuhiko Mizoguchi ,  Isao Sakai ,  Koichiro Inomata

发明人： Tetsuhiko Mizoguchi ,  Isao Sakai ,  Koichiro Inomata

IPC分类号： C22C38/00 ,  H01F1/053 ,  H01F1/057 ,  H01F1/08

CPC分类号： H01F1/0577

摘要： There is disclosed a permanent magnet comprising a sintered alloy composed of rare earth elements (R), boron and iron. This permanent magnet is substantially constituted by 2-phase systems, i.e. a ferromagnetic Fe-rich phase (Nd.sub.2 Fe.sub.14 B) and a nonmagnetic R-rich phase (Nd.sub.97 Fe.sub.3), and has BH.sub.max of more than 38.0 MGOe.

摘要翻译： 公开了一种永磁体，其包括由稀土元素（R），硼和铁组成的烧结合金。 该永磁体基本上由两相体系构成，即铁磁性富Fe相（Nd2Fe14B）和非磁性富R相（Nd97Fe3），BHmax大于38.0MGOe。