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公开(公告)号：US20070173072A1
公开(公告)日：2007-07-26
申请号：US10589077
申请日：2005-02-17
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , H01L21/31604
摘要： [Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed. [Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted. HnSi2(OR)6-n(In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)
摘要翻译： [问题]提供一种在低温下具有比TEOS更好质量的氧化硅膜的方法。 并且提供一种制造其中形成由氧化硅构成的绝缘膜的半导体器件的方法。 解决问题的手段通过CVD法制造由氧化硅构成的膜，其中由以下通式表示的硅烷化合物反应。 通过CVD法沉积绝缘膜，其中由以下通式表示的硅烷化合物反应。 <？in-line-formula description =“In-line Formulas”end =“lead”？> H＆lt; 2＆lt; 2＆gt;（OR）6-n < （式中，R为碳原子数为1〜5的烷基，n为0〜10的整数） 0到2.）
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公开(公告)号：US07488693B2
公开(公告)日：2009-02-10
申请号：US10589077
申请日：2005-02-17
IPC分类号： H01L21/26
CPC分类号： C23C16/401 , H01L21/31604
摘要： [Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed.[Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted. HnSi2(OR)6−n (In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)
摘要翻译： [问题]提供一种在低温下具有比TEOS更好质量的氧化硅膜的方法。 并且提供一种制造其中形成由氧化硅构成的绝缘膜的半导体器件的方法。 解决问题的手段通过CVD法制造由氧化硅构成的膜，其中由以下通式表示的硅烷化合物反应。 通过CVD法沉积绝缘膜，其中由以下通式表示的硅烷化合物反应。 <？in-line-formula description =“In-line Formulas”end =“lead”？> HnSi2（OR）6-n <？in-line-formula description =“In-line Formulas”end =“tail”？ >（在上式中，R为碳原子数1〜5的烷基，n为0〜2的整数）
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公开(公告)号：US20090104100A1
公开(公告)日：2009-04-23
申请号：US12224508
申请日：2007-02-06
申请人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
发明人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
IPC分类号： B01D53/70
CPC分类号： B01D53/68 , B01D2257/204 , C23C16/4412 , F23G7/063 , F23L7/002
摘要： Hexachlorodisilane is decomposed into hydrochloric acid, silicon dioxide and water by introducing hexachlorodisilane-containing flue gas into a reaction region without moistening the flue gas and by supplying oxygen-containing gas that also contains a small amount of moisture to the reaction region maintained at a temperature at which hexachlorodisilane decomposes.
摘要翻译： 将六氯二硅烷分解成盐酸，二氧化硅和水，通过将六氯二硅烷的烟道气引入反应区而不使烟道气润湿，并将含有少量水分的含氧气体供给到保持在温度 六氯代硅烷分解。
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公开(公告)号：US07976807B2
公开(公告)日：2011-07-12
申请号：US12224508
申请日：2007-02-06
申请人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
发明人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
IPC分类号： B01D53/68
CPC分类号： B01D53/68 , B01D2257/204 , C23C16/4412 , F23G7/063 , F23L7/002
摘要： Hexachlorodisilane is decomposed into hydrochloric acid, silicon dioxide and water by introducing hexachlorodisilane-containing flue gas into a reaction region without moistening the flue gas and by supplying oxygen-containing gas that also contains a small amount of moisture to the reaction region maintained at a temperature at which hexachlorodisilane decomposes.
摘要翻译： 将六氯二硅烷分解成盐酸，二氧化硅和水，通过将六氯二硅烷的烟道气引入反应区而不使烟道气润湿，并将含有少量水分的含氧气体供给到保持在温度 六氯代硅烷分解。
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公开(公告)号：US20050020845A1
公开(公告)日：2005-01-27
申请号：US10489719
申请日：2002-09-11
CPC分类号： C07F7/1876 , C07F7/1804
摘要： An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material. The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon-carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon-carbon unsaturated bond in the compound (B).
摘要翻译： 本发明的目的是提供一种制备不使用氯硅烷作为中间原料的烷氧基硅烷的方法，其环境方面得到改善，并且对于所需材料的产率而言是令人满意的。 本发明涉及一种制备烷氧基硅烷的方法，该方法包括使（A）具有至少一个氢 - 硅键和至少一个烷氧基的有机硅化合物和（B）在蒸气中具有碳 - 碳不饱和键的有机化合物 在含有氢化硅烷化催化剂和聚亚烷基二醇的混合物存在下，负载在载体上，从而将化合物（A）的氢和硅加入化合物（B）中的碳 - 碳不饱和键。
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公开(公告)号：US07005532B2
公开(公告)日：2006-02-28
申请号：US10489719
申请日：2002-09-11
IPC分类号： C07F7/18
CPC分类号： C07F7/1876 , C07F7/1804
摘要： An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material.The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon—carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon—carbon unsaturated bond in the compound (B).
摘要翻译： 本发明的目的是提供一种制备不使用氯硅烷作为中间原料的烷氧基硅烷的方法，其环境方面得到改善，并且对于所需材料的产率是令人满意的。
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公开(公告)号：US4645688A
公开(公告)日：1987-02-24
申请号：US679460
申请日：1984-12-07
CPC分类号： C08G77/54 , C08G73/1042 , C08G73/106 , H01B3/303 , H01B3/46 , H01L23/296 , H01L2924/0002
摘要： There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.
摘要翻译： 公开了一种用于保护涂层材料的组合物，优选用于半导体器件的保护涂层材料，其由半导体存储元件的主要元件，包含用于封装所述元件的无机材料的封装层和固化保护层 布置在所述存储元件和所述封装层之间的涂料，其由通过二氨基硅氧烷，不含硅的有机二胺和有机四元酸二酐反应获得的聚酰胺酸和具有固化的层的半导体器件 由通过上述聚酰胺酸脱水闭环得到的聚酰亚胺 - 硅氧烷共聚物构成的保护涂料。
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公开(公告)号：US4511705A
公开(公告)日：1985-04-16
申请号：US568284
申请日：1984-01-05
CPC分类号： C08G77/54 , C08G73/1042 , C08G73/106 , H01B3/303 , H01B3/46 , H01L23/296 , H01L2924/0002
摘要： There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.
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公开(公告)号：US09871933B2
公开(公告)日：2018-01-16
申请号：US15370061
申请日：2016-12-06
申请人： Hiroshi Suzuki , Takao Suzuki
发明人： Hiroshi Suzuki , Takao Suzuki
CPC分类号： H04N1/0044 , G06F3/1208 , G06F3/1256 , G06F3/1294 , G06K15/1813 , G06K15/1822 , H04N1/00204 , H04N1/00344 , H04N2201/0039 , H04N2201/0094
摘要： An information processing apparatus is for generating image data by using drawing information for drawing an image. The information processing apparatus includes a print data acquirer configured to acquire print data including the drawing information from outside; a request acceptor configured to accept a request to display the image data of any page in the print data; a reader configured to read specific drawing information of pages in the print data up to a page before the any page accepted by the request acceptor, from a drawing information storage storing the specific drawing information, which is the drawing information that may be applied to the image data of pages after a page in which the drawing information is described, among the drawing information included in the print data; and a generator configured to generate the image data of the any page by applying the read specific drawing information.
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10.发明授权公开(公告)号：US09870185B2
公开(公告)日：2018-01-16
申请号：US15237560
申请日：2016-08-15
申请人： Hiroshi Suzuki , Toshiyuki Haginoya
发明人： Hiroshi Suzuki , Toshiyuki Haginoya
IPC分类号： G06F3/12
CPC分类号： G06F3/1288 , G06F3/1211 , G06F3/1219 , G06F3/1256 , G06F3/1286
摘要： A disclosed print manager server includes one or more processors and a memory configured to store a print management program. The processors execute the print management program to perform a process including analyzing an attribute of print data introduced, predicting a page of a preview image to be generated based on the analyzed attribute, a preview history of previous print jobs, and a preview prediction condition, generating the preview image of the predicted page, and providing the generated preview image in response to a request to display a preview.
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