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    Process of producing alkoxysilanes
    1.
    发明授权
    Process of producing alkoxysilanes 失效
    生产烷氧基硅烷的方法

    公开(公告)号：US07005532B2

    公开(公告)日：2006-02-28

    申请号：US10489719

    申请日：2002-09-11

    申请人： Eiichi Suzuki ,  Masaki Okamoto ,  Seitaro Tajima ,  Hiroshi Suzuki ,  Katsuyoshi Harada

    发明人： Eiichi Suzuki ,  Masaki Okamoto ,  Seitaro Tajima ,  Hiroshi Suzuki ,  Katsuyoshi Harada

    IPC分类号： C07F7/18

    CPC分类号： C07F7/1876 ,  C07F7/1804

    摘要： An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material.The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon—carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon—carbon unsaturated bond in the compound (B).

    摘要翻译： 本发明的目的是提供一种制备不使用氯硅烷作为中间原料的烷氧基硅烷的方法，其环境方面得到改善，并且对于所需材料的产率是令人满意的。

    Process of producing alkoxysilanes
    2.
    发明申请
    Process of producing alkoxysilanes 失效
    生产烷氧基硅烷的方法

    公开(公告)号：US20050020845A1

    公开(公告)日：2005-01-27

    申请号：US10489719

    申请日：2002-09-11

    申请人： Eiichi Suzuki ,  Masaki Okamoto ,  Seitaro Tajima ,  Hiroshi Suzuki ,  Katsuyoshi Harada

    发明人： Eiichi Suzuki ,  Masaki Okamoto ,  Seitaro Tajima ,  Hiroshi Suzuki ,  Katsuyoshi Harada

    IPC分类号： C07F7/18 ,  C07F7/04 ,  C07F7/08

    CPC分类号： C07F7/1876 ,  C07F7/1804

    摘要： An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material. The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon-carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon-carbon unsaturated bond in the compound (B).

    摘要翻译： 本发明的目的是提供一种制备不使用氯硅烷作为中间原料的烷氧基硅烷的方法，其环境方面得到改善，并且对于所需材料的产率而言是令人满意的。 本发明涉及一种制备烷氧基硅烷的方法，该方法包括使（A）具有至少一个氢 - 硅键和至少一个烷氧基的有机硅化合物和（B）在蒸气中具有碳 - 碳不饱和键的有机化合物 在含有氢化硅烷化催化剂和聚亚烷基二醇的混合物存在下，负载在载体上，从而将化合物（A）的氢和硅加入化合物（B）中的碳 - 碳不饱和键。

    SHIELD CONNECTOR
    4.
    发明申请
    SHIELD CONNECTOR 失效
    屏蔽连接器

    公开(公告)号：US20100248541A1

    公开(公告)日：2010-09-30

    申请号：US12725634

    申请日：2010-03-17

    申请人： Masaki Okamoto

    发明人： Masaki Okamoto

    IPC分类号： H01R13/648

    CPC分类号： H01R13/648 ,  H01R13/504 ,  H01R43/24

    摘要： A shield connector (C) includes a tubular metallic shield shell (30) integrally attached to the outer circumferential surface of a housing (10) made of resin by insert molding. The shield shell (30) is formed with a cut (32) extending between opposite ends in a longitudinal direction, and a pair of opening preventing pieces (34A, 34B) which extend radially inward or outward, circumferentially face each other and can come into contact with each other when edges (33A, 33B) at the opposite sides of the cut (32) are displaced in directions away from each other are provided on the opposite edges (33A, 33B) of the shield shell 30 facing each other with the cut (32) therebetween.

    摘要翻译： 屏蔽连接器（C）包括通过插入成型一体地附接到由树脂制成的壳体（10）的外周表面的管状金属屏蔽壳（30）。 屏蔽壳30形成有在长度方向的相对端之间延伸的切口（32），并且一对径向向内或向外延伸的开口防止件（34A，34B）彼此周向地面对，并且可以进入 在屏蔽壳30的彼此面对的相对边缘（33A，33B）上设置有在切割部（32）的相对侧上的边缘（33A，33B）彼此偏离的方向上彼此相对的方式彼此接触， 在它们之间切割（32）。

    Method of manufacturing semiconductor device and semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device and semiconductor device 失效
    制造半导体器件和半导体器件的方法

    公开(公告)号：US07378340B2

    公开(公告)日：2008-05-27

    申请号：US11346890

    申请日：2006-02-03

    申请人： Yoshiyuki Enomoto ,  Hiroyuki Kawashima ,  Masaki Okamoto

    发明人： Yoshiyuki Enomoto ,  Hiroyuki Kawashima ,  Masaki Okamoto

    IPC分类号： H01L27/15

    CPC分类号： H01L23/53295 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76838 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film. The second-mask forming layer is etched through the fourth mask to thereby form a second mask having the interconnect trench pattern, and the first insulating film that remains under the bottoms of the via holes is removed. Subsequently, the second insulating film is etched through the second mask to thereby form an interconnect trench, and then the second mask is removed.

    摘要翻译： 本发明提供一种制造半导体器件和半导体器件的方法，该半导体器件和半导体器件允许在形成双镶嵌结构时使用具有低介电常数的中间层和互连绝缘膜。 第一绝缘膜，第二绝缘膜，第一掩模形成层，第二掩模形成层，第三掩模形成层和第四掩模形成层依次沉积在衬底上。 图案化第四掩模形成层以形成具有互连沟槽图案的第四掩模。 在第四掩模上形成抗蚀剂掩模之后，蚀刻到第二绝缘膜的层以打开通孔。 通过第四掩模蚀刻第三掩模形成层，从而形成具有互连沟槽图案的第三掩模，并且在第一绝缘膜上向下延伸通孔。 通过第四掩模蚀刻第二掩模形成层，从而形成具有互连沟槽图案的第二掩模，并且去除留在通孔底部的第一绝缘膜。 随后，通过第二掩模蚀刻第二绝缘膜，从而形成互连沟槽，然后去除第二掩模。

    L-shaped bulb socket
    6.
    发明授权
    L-shaped bulb socket 失效
    L形灯泡插座

    公开(公告)号：US07063576B2

    公开(公告)日：2006-06-20

    申请号：US10991567

    申请日：2004-11-18

    申请人： Masashi Ooi ,  Masaki Okamoto

    发明人： Masashi Ooi ,  Masaki Okamoto

    IPC分类号： H01R24/00 ,  H01R13/53

    CPC分类号： H01R33/09 ,  H01R11/05 ,  H01R13/04 ,  H01R13/11 ,  H01R13/743

    摘要： Each terminal (3) of a bulb socket (1) has a power-supplying tab (31) and a bulb connecting portion (32) that are integral with one another. The bulb connecting portion (32) is on an extension of the power-supplying tab (31) extending along an inserting direction into a connector accommodating portion (25). Thus, the bulb socket (1) is reduced in height, the number of assembling steps is reduced, and the deformation of the terminals can be avoided. Further, a reduction in the number of parts leads to reduced production costs.

    摘要翻译： 灯泡插座（1）的每个端子（3）具有彼此成一体的供电突片（31）和灯泡连接部分（32）。 灯泡连接部分（32）位于供电接头（31）的沿着插入方向延伸到连接器容纳部分（25）中的延伸部分上。 因此，灯泡插座（1）的高度减小，组装步骤的数量减少，并且可以避免端子的变形。 此外，部件数量的减少导致生产成本降低。

    Connector and method for producing the same
    7.
    发明授权
    Connector and method for producing the same 失效
    连接器及其制造方法

    公开(公告)号：US06796852B2

    公开(公告)日：2004-09-28

    申请号：US10202032

    申请日：2002-07-23

    申请人： Masaki Okamoto

    发明人： Masaki Okamoto

    IPC分类号： H01R13405

    CPC分类号： H01R43/24 ,  H01R13/405 ,  H01R43/16

    摘要： In a process of secondary insert molding, a molten resin is injected into a cavity (236) for secondary molding that is formed by bring a clipping portion (234) of a mold for secondary molding into contact with an outer surface of a primary molding article (216). Projecting areas of ends (214A) of terminals (214) on an outer surface of a resin molding portion (210) are formed of a primary molding resin portion (219). Thus, the cavity (236) for secondary molding and clipping portion (234) are in a position where the ends (214A) of the terminals (214) do not contact the cavity (236) and clipping portion (234).

    摘要翻译： 在二次嵌入成型的过程中，将熔融树脂注入到用于二次模塑的空腔（236）中，该空腔通过使用于二次模制的模具的夹持部分（234）与初级模制品的外表面接触而形成 （216）。 在树脂成型部（210）的外表面上的端子（214）的端部（214A）的突出区域由初级模制树脂部分（219）形成。 因此，用于二次模制和夹紧部分（234）的腔（236）处于端子（214）的端部（214A）不接触空腔（236）和夹持部分（234）的位置。

    Connection configuration of a multiple-light lighting fixture
    8.
    发明授权
    Connection configuration of a multiple-light lighting fixture 失效
    多光照明灯具的连接配置

    公开(公告)号：US06343942B1

    公开(公告)日：2002-02-05

    申请号：US09421318

    申请日：1999-10-18

    申请人： Masaki Okamoto

    发明人： Masaki Okamoto

    IPC分类号： H01R2500

    CPC分类号： H01R33/09 ,  H01R25/142

    摘要： Electric wires 41 are housed within a housing space 36 and make contact with bulb-inking contacting members 22, all of the bulbs 42 being connected via bulb terminal fittings 19 and bulb-linking contacting members 22. A multiple-light lighting fixture can be made suitable for a varying number of bulbs or for bulbs of varying pitch merely by altering the length of the electric wires 41. As a result costs can be reduced compared to the case in which a bus bar is formed in a unified manner with terminal areas which make contact with bulbs, and in which a plurality of types of bus bars are produced in order to correspond to the number of bulbs or the pitch thereof.

    摘要翻译： 电线41容纳在容纳空间36内并与灯泡接触构件22接触，所有灯泡42通过灯泡端子配件19和灯泡连接接触构件22连接。可以制造多灯照明器具 适用于不同数量的灯泡或仅通过改变电线41的长度而变化的灯泡的灯泡。结果，与以与终端区域的终端区域形成总线的情况相比，可以降低成本 与灯泡接触，并且其中生产多种类型的母线以便对应于灯泡数量或节距。