公开(公告)号：US06998329B2

公开(公告)日：2006-02-14

申请号：US10483613

申请日：2002-07-24

申请人： Hiroji Aga ,  Hiroyuki Takahashi ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Hiroyuki Takahashi ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  B65G49/07

CPC分类号： H01L21/67092 ,  H01L21/76254 ,  Y10S414/135

摘要： In the process of fabricating an SOI wafer based on the Smart Cut® Process, a stack 34 of an SOI wafer 39 and a residual wafer 38 are separated into the individual wafers using a wafer separation jig 1 of this invention. The wafer separation jig 1 comprises a supporting plane 1p on which the stack 34 is supported in the thickness-wise direction, and a stepped portion 2 disposed on the supporting plane 1p, and having a height adjusted so as to stop movement-by-sliding of the lower wafer of the stack, but so as to allow movement-by-sliding of the upper wafer relative to the lower wafer. Both wafers are separated from each other by inclining the supporting plane 1p with the stack 34 placed thereon, so as to allow the upper wafer to move by sliding as being driven by its own weight in the in-plane direction relative to the lower wafer. This method is successful in effectively suppressing friction between the wafers, and thus in preventing the wafer surface from being scratched.

摘要翻译： 在制造基于智能切割工艺的SOI晶片的过程中，使用本发明的晶片分离夹具1将SOI晶片39的堆叠34和残余晶片38分离成单个晶片。 晶片分离夹具1包括在其上沿着​​厚度方向支撑着堆叠34的支撑平面1p和设置在支撑平面1p上的阶梯部分2，并且具有调节以便停止移动的高度 - 堆叠的下部晶片的滑动，但是允许上部晶片相对于下部晶片的滑动。 通过使支撑平面1p与放置在其上的叠层34相互倾斜来将两个晶片彼此分离，以便允许上晶片通过其自重由相对于下晶片的面内方向驱动的滑动而滑动 。 该方法成功地有效地抑制晶片之间的摩擦，从而防止晶片表面被划伤。

公开(公告)号：US20060185581A1

公开(公告)日：2006-08-24

申请号：US11353046

申请日：2006-02-14

申请人： Hiroji Aga ,  Nobuhiko Noto ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Nobuhiko Noto ,  Kiyoshi Mitani

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B31/22 ,  C30B29/06 ,  C30B29/52

摘要： The present invention provides a method for producing a semiconductor wafer comprising at least steps of, forming a Si1-XGeX layer (0

摘要翻译： 本发明提供一种用于制造半导体晶片的方法，该方法至少包括以下步骤：形成具有临界状态的Si 1-X 1 Ge x X 1层（0

公开(公告)号：US20050118789A1

公开(公告)日：2005-06-02

申请号：US10507175

申请日：2003-12-25

申请人： Hiroji Aga ,  Isao Yokokawa ,  Kiyotaka Takano ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Isao Yokokawa ,  Kiyotaka Takano ,  Kiyoshi Mitani

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/26533 ,  H01L21/76254

摘要： The present invention relates to a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by forming an oxide film on a surface of at least one of a bond wafer and a base wafer, bonding the bond wafer to the base wafer through the formed oxide film, and making the bond wafer into a thin film, wherein after the oxide film is formed so that a total thickness of the oxide film formed on the surface of at least one of the bond wafer and the base wafer is thicker than a thickness of the buried oxide film that the SOI wafer to be produced has, the bond wafer is bonded to the base wafer through the formed oxide film, the bond wafer is made into a thin film to form an SOI layer, and thereafter, an obtained bonded wafer is subjected to heat treatment to reduce a thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which blisters and voids are not generated even if the thickness of the buried oxide film is thinned, and its SOI layer has extremely good crystallinity.

摘要翻译： 本发明涉及一种制造SOI晶片的方法，其中通过在接合晶片和基底晶片中的至少一个的表面上形成氧化膜，在掩埋氧化膜上形成SOI层，将接合晶片接合到 通过形成的氧化膜的基底晶片，并将接合晶片制成薄膜，其中在形成氧化物膜之后，使得形成在至少一个接合晶片和基底的表面上的氧化膜的总厚度 晶片比所制造的SOI晶片的埋入氧化膜的厚度厚，通过形成的氧化膜将接合晶片接合到基底晶片，将接合晶片制成薄膜以形成SOI层， 然后，对获得的接合晶片进行热处理以减小掩埋氧化膜的厚度。 因此，可以提供一种制造SOI晶片的方法，其中即使掩埋氧化膜的厚度变薄也不会产生起泡和空隙，并且其SOI层具有非常好的结晶度。

公开(公告)号：US20050042840A1

公开(公告)日：2005-02-24

申请号：US10948234

申请日：2004-09-24

申请人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

IPC分类号： H01L21/762 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

公开(公告)号：US07560313B2

公开(公告)日：2009-07-14

申请号：US10473352

申请日：2002-03-29

申请人： Hiroji Aga ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Kiyoshi Mitani

IPC分类号： H01L21/00

CPC分类号： H01L21/76254

摘要： The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 μm or more existing in a surface of a SOI layer detected by a LPD inspection is 1 counts/cm2 or less, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.

摘要翻译： 本发明提供一种通过离子注入分层方法制造的SOI晶片，其中在SOI晶片的边缘部分中产生的露台部分中的SOI岛区域的宽度基底晶片暴露的距离窄于1mm， 存在于通过LPD检查检测的SOI层的表面中的具有0.19μm以上的尺寸的凹坑状缺陷的密度为1个/ cm 2以下，并且还提供了SOI晶片的制造方法。 因此，提供了通过离子注入分层方法制造的SOI晶片，其中可以抑制在分层中产生的SOI岛的产生，并且可以减少存在于SOI晶片的表面中的LPD的缺陷密度，以及制造 相同，从而可以减少设备故障。

公开(公告)号：US07524744B2

公开(公告)日：2009-04-28

申请号：US10544374

申请日：2004-02-13

申请人： Isao Yokokawa ,  Hiroji Aga ,  Kiyotaka Takano ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Hiroji Aga ,  Kiyotaka Takano ,  Kiyoshi Mitani

IPC分类号： H01L21/425

CPC分类号： H01L21/76243 ,  H01L21/26533

摘要： The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.

摘要翻译： 本发明提供一种制造SOI晶片的方法，其至少包括通过从其一个主表面将氧离子注入硅晶片来形成氧离子注入层的步骤，将硅晶片进行氧化膜形成热处理 将氧离子注入层转换为埋入氧化膜，由此在埋入氧化膜上制造具有SOI层的SOI晶片，其中，当在硅晶片中形成掩埋氧化膜时，形成掩埋氧化膜，使得 其厚度比所制造的SOI晶片的埋入氧化膜的厚度厚，然后对其中形成较厚掩埋氧化膜的硅晶片进行热处理，以减小掩埋氧化物的厚度 电影。 因此，可以提供一种制造SOI晶片的方法，其中具有膜厚度薄且完整性高的掩埋氧化膜的高品质SOI晶片和结晶度和表面质量非常好的SOI层 使用SIMOX法生产。

公开(公告)号：US07176102B2

公开(公告)日：2007-02-13

申请号：US10948234

申请日：2004-09-24

申请人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

摘要翻译： 一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤 微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理 加工型炉。 优选地，首先进行RTA装置的热处理。 通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

公开(公告)号：US06884696B2

公开(公告)日：2005-04-26

申请号：US10380979

申请日：2002-07-09

申请人： Hiroji Aga ,  Shinichi Tomizawa ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Shinichi Tomizawa ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/12

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing a bonded wafer by the ion implantation delamination method includes at least a step of bonding a bond wafer having a micro bubble layer formed by gaseous ion implantation and a base wafer serving as a support substrate and a step of delaminating the bond wafer at the micro bubble layer as a border to form a thin film on the base wafer. After the delamination of the bond wafer, the bonded wafer is subjected to a heat treatment in an atmosphere of an inert gas, hydrogen or a mixed gas thereof, then the bonded wafer is subjected to thermal oxidation to form a thermal oxide film on the surface of the thin film, and then the thermal oxide film is removed to reduce thickness of the thin film.

摘要翻译： 通过离子注入分层方法制造接合晶片的方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与作为支撑基板的基底晶片接合的步骤和将接合晶片分层的步骤 在微气泡层作为边界在基底晶片上形成薄膜。 在接合晶片分层后，在惰性气体，氢气或其混合气体的气氛中对接合的晶片进行热处理，然后将接合的晶片进行热氧化，以在表面上形成热氧化膜 的薄膜，然后去除热氧化膜以减小薄膜的厚度。

公开(公告)号：US06372609B1

公开(公告)日：2002-04-16

申请号：US09555687

申请日：2000-06-02

申请人： Hiroji Aga ,  Naoto Tate ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naoto Tate ,  Kiyoshi Mitani

IPC分类号： H01L2130

CPC分类号： H01L21/76254

摘要： There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.

摘要翻译： 提供了一种通过氢离子分层方法制造具有高质量的SOI晶片的方法，其中去除了在分层之后残留在SOI层的表面上的损伤层和表面粗糙度，保持了SOI层的厚度均匀性。 根据本发明，提供了一种通过氢离子分层方法制造SOI晶片的方法，其中通过在结合热处理之后的氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜， 然后进行还原气氛的热处理。 通过氢分离法制造SOI晶片的方法，其中通过在分解热处理之后在氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后在还原气氛中进行热处理 执行 以及通过该方法制造的SOI晶片。

公开(公告)号：US06239004B1

公开(公告)日：2001-05-29

申请号：US09135976

申请日：1998-08-18

申请人： Hiroji Aga ,  Kiyoshi Mitani ,  Masatake Nakano

发明人： Hiroji Aga ,  Kiyoshi Mitani ,  Masatake Nakano

IPC分类号： H01L2130

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： In a method of fabricating a bonded wafer, an oxide film is first formed on the surface of at least one of two mirror-polished silicon wafers. The two silicon wafers are superposed such that the mirror-polished surfaces come into close contact with each other, and heat treatment is performed in order to join the wafers together firmly. Subsequently, the thickness of one of the wafers is reduced so as to yield a thin film, the surface of which is then polished and subjected to vapor-phase etching in order to make the thickness of the thin film uniform. Optionally, the vapor-phase-etched surface is then mirror-polished. The surface of the bonded wafer is oxidized, and the generated surface oxide film is then removed. In the method, the thickness of the oxide film formed on the surface of the bonded wafer is made not greater than 50 nm. The method reliably eliminates damage and crystal defects generated during etching in accordance with PACE method or subsequent mirror polishing, and thereby enables relatively simple and low cost manufacture of bonded wafers having a very thin SOI layer that has good thickness uniformity and excellent crystallinity.

摘要翻译： 在制造接合晶片的方法中，首先在两个镜面抛光硅晶片中的至少一个的表面上形成氧化膜。 将两个硅晶片叠置成使得镜面抛光表面彼此紧密接触，并且进行热处理以将晶片牢固地接合在一起。 随后，减少一个晶片的厚度，以产生薄膜，然后对其表面进行抛光并进行气相蚀刻，以使薄膜的厚度均匀。 任选地，将气相蚀刻表面进行镜面抛光。 接合晶片的表面被氧化，然后除去生成的表面氧化膜。 在该方法中，形成在接合晶片的表面上的氧化膜的厚度不大于50nm。 该方法可以根据PACE法或随后的镜面抛光可靠地消除蚀刻期间产生的损伤和晶体缺陷，从而能够制造具有良好厚度均匀性和优异结晶度的非常薄的SOI层的接合晶片的相对简单且低成本的制造。