公开(公告)号：US20080128851A1

公开(公告)日：2008-06-05

申请号：US11662285

申请日：2005-09-09

申请人： Hiroji Aga ,  Norihiro Kobayashi ,  Masayuki Imai ,  Tatsuo Enomoto ,  Hiroshi Takeno

发明人： Hiroji Aga ,  Norihiro Kobayashi ,  Masayuki Imai ,  Tatsuo Enomoto ,  Hiroshi Takeno

IPC分类号： H01L29/00 ,  H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/3226

摘要： A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ

摘要翻译： 一种制造SOI晶片的方法包括接合步骤，薄化和接合退火步骤。 假设SiO 2的折射率n 1为1.5，Si的折射率n 2为3.5，氧化硅膜2和SOI层15的光学厚度t OP 在红外波长区域中，作为t OP = N 1×t 1 + n 2×t 2，氧化硅膜2的厚度t 1和SOI层的厚度t 2满足关系 并且使得（t 1×n 1）/（t 2×n 2）落在0.2-3范围内。通过在键合退火之前进行的核激光退火 在接合退火之后将基底晶片中的氧沉淀形成密度调节到小于1×10 9 / cm 3以上。 该结构成功地提供了制造具有薄氧化硅膜和SOI层的SOI晶片的方法，并且不太可能引起翘曲。

公开(公告)号：US07902042B2

公开(公告)日：2011-03-08

申请号：US11662285

申请日：2005-09-09

申请人： Hiroji Aga ,  Norihiro Kobayashi ,  Masayuki Imai ,  Tatsuo Enomoto ,  Hiroshi Takeno

发明人： Hiroji Aga ,  Norihiro Kobayashi ,  Masayuki Imai ,  Tatsuo Enomoto ,  Hiroshi Takeno

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/3226

摘要： A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ

摘要翻译： 一种制造SOI晶片的方法包括接合步骤，薄化和接合退火步骤。 假设SiO 2的折射率n1为1.5，Si的折射率n2为3.5，红外波长区域中的氧化硅膜2和SOI层15的光学厚度tOP为tOP = n1×t1 + n2×t2，厚度 氧化硅膜2的t1和SOI层的厚度t2以满足0.1λ

公开(公告)号：US20110104870A1

公开(公告)日：2011-05-05

申请号：US12866271

申请日：2009-02-17

申请人： Norihiro Kobayashi ,  Tohru Ishizuka ,  Hiroji Aga ,  Nobuhiko Noto

发明人： Norihiro Kobayashi ,  Tohru Ishizuka ,  Hiroji Aga ,  Nobuhiko Noto

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.

摘要翻译： 一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子 将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。 将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。 该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

公开(公告)号：US08097523B2

公开(公告)日：2012-01-17

申请号：US12866271

申请日：2009-02-17

申请人： Norihiro Kobayashi ,  Tohru Ishizuka ,  Hiroji Aga ,  Nobuhiko Noto

发明人： Norihiro Kobayashi ,  Tohru Ishizuka ,  Hiroji Aga ,  Nobuhiko Noto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.

摘要翻译： 一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子 将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。 将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。 该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

公开(公告)号：US07521334B2

公开(公告)日：2009-04-21

申请号：US11659283

申请日：2005-11-29

申请人： Norihiro Kobayashi ,  Toru Ishizuka ,  Tomohiko Ohta ,  Hiroji Aga ,  Yasuo Nagaoka

发明人： Norihiro Kobayashi ,  Toru Ishizuka ,  Tomohiko Ohta ,  Hiroji Aga ,  Yasuo Nagaoka

IPC分类号： H01L21/30

CPC分类号： H01L21/2007 ,  H01L21/76254

摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

摘要翻译： 一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合到所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜， 将晶片直接接合到基底晶片。 因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

公开(公告)号：US08202787B2

公开(公告)日：2012-06-19

申请号：US13129538

申请日：2009-11-11

申请人： Tohru Ishizuka ,  Norihiro Kobayashi ,  Hiroji Aga ,  Nobuhiko Noto

发明人： Tohru Ishizuka ,  Norihiro Kobayashi ,  Hiroji Aga ,  Nobuhiko Noto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L22/12 ,  H01L22/20 ,  H01L29/78603

摘要： A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.

摘要翻译： 一种制造具有预定厚度的具有预定厚度的掩埋氧化物膜的SOI晶片的方法，包括：在掩埋氧化膜上形成SOI层的SOI晶片材料上进行用于减小掩埋氧化膜厚度的热处理，其中， 基于通过热处理而减少的掩埋氧化膜的厚度的比率，计算要进行用于减小掩埋氧化膜的厚度的热处理的SOI晶片材料的SOI层相对于 掩埋氧化膜的面内范围的变化量的允许值，由热处理引起的变化，以及通过使接合晶片的厚度变薄而获得的SOI晶片材料，使得具有计算出的厚度 对SOI层进行热处理，以减小掩埋氧化膜的厚度。

公开(公告)号：US20100120223A1

公开(公告)日：2010-05-13

申请号：US12452085

申请日：2008-07-03

申请人： Norihiro Kobayashi ,  Hiroji Aga ,  Yasuo Nagaoka ,  Nobuhiko Noto

发明人： Norihiro Kobayashi ,  Hiroji Aga ,  Yasuo Nagaoka ,  Nobuhiko Noto

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/26506

摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.

摘要翻译： 本发明是一种通过离子注入分层方法制造接合晶片的方法，该方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与基底晶片接合成为支撑基板的步骤， 沿着微气泡层接合晶片作为边界以在基底晶片上形成薄膜，所述方法包括：在使用臭氧水分离所述接合晶片之后清洁所述接合晶片; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并除去热氧化膜，在接合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。 结果，能够去除离子注入引起的损伤的粘合晶片的制造方法，能够抑制脱层后的接合晶片的表面的表面粗糙度的劣化的凹陷缺陷的发生， 提供。

公开(公告)号：US20080102603A1

公开(公告)日：2008-05-01

申请号：US11659283

申请日：2005-11-29

申请人： Norihiro Kobayashi ,  Toru Ishizuka ,  Tomohiko Ohta ,  Hiroji Aga ,  Yasuo Nagaoka

发明人： Norihiro Kobayashi ,  Toru Ishizuka ,  Tomohiko Ohta ,  Hiroji Aga ,  Yasuo Nagaoka

IPC分类号： H01L21/46

CPC分类号： H01L21/2007 ,  H01L21/76254

摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

摘要翻译： 一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合至所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜， 将晶片直接接合到基底晶片。 因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

公开(公告)号：US20110223740A1

公开(公告)日：2011-09-15

申请号：US13129538

申请日：2009-11-11

申请人： Tohru Ishizuka ,  Norihiro Kobayashi ,  Hiroji Aga ,  Nobuhiko Noto

发明人： Tohru Ishizuka ,  Norihiro Kobayashi ,  Hiroji Aga ,  Nobuhiko Noto

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L22/12 ,  H01L22/20 ,  H01L29/78603

摘要： A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.

摘要翻译： 一种制造具有预定厚度的具有预定厚度的掩埋氧化物膜的SOI晶片的方法，包括：在掩埋氧化膜上形成SOI层的SOI晶片材料上进行用于减小掩埋氧化膜厚度的热处理，其中， 基于通过热处理而减少的掩埋氧化膜的厚度的比率，计算要进行用于减小掩埋氧化膜的厚度的热处理的SOI晶片材料的SOI层相对于 掩埋氧化膜的面内范围的变化量的允许值，由热处理引起的变化，以及通过使接合晶片的厚度变薄而获得的SOI晶片材料，使得具有计算出的厚度 对SOI层进行热处理，以减小掩埋氧化膜的厚度。

公开(公告)号：US06238990B1

公开(公告)日：2001-05-29

申请号：US09185901

申请日：1998-11-04

申请人： Hiroji Aga ,  Norihiro Kobayashi ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Norihiro Kobayashi ,  Kiyoshi Mitani

IPC分类号： H02L21336

CPC分类号： H01L21/3226 ,  H01L21/324 ,  H01L21/76256

摘要： A method for heat-treating an SOI wafer in a reducing atmosphere, wherein the SOI wafer is heat-treated through use of a rapid thermal annealer at a temperature within the range of 1100° C. to 1300° C. for 1 sec to 60 sec. The reducing atmosphere is preferably an atmosphere of 100% hydrogen or a mixed gas atmosphere containing hydrogen and argon. The heat treatment is preferably performed for 1 sec to 30 sec. The method eliminates COPs in an SOI layer of an SOI wafer in accordance with a hydrogen annealing method, while preventing etching of the SOI layer and a buried oxide layer.

摘要翻译： 一种用于在还原气氛中对SOI晶片进行热处理的方法，其中通过使用快速热退火炉在1100℃至1300℃的温度范围内对SOI晶片进行热处理1秒至60秒 秒 还原气氛优选为100％氢气或含有氢气和氩气的混合气体气氛。 优选进行1秒〜30秒的热处理。 该方法根据氢退火方法消除SOI晶片的SOI层中的COP，同时防止SOI层和掩埋氧化物层的蚀刻。