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公开(公告)号：US5474391A
公开(公告)日：1995-12-12
申请号：US136890
申请日：1993-10-18
申请人： Hirokazu Andou , Hideaki Ishimizu , Mitsuru Kishimoto , Yoichi Umezawa , Hiroshi Sakaino , Masahiko Shimosugi , Takanori Mimura
发明人： Hirokazu Andou , Hideaki Ishimizu , Mitsuru Kishimoto , Yoichi Umezawa , Hiroshi Sakaino , Masahiko Shimosugi , Takanori Mimura
IPC分类号： B41J25/308 , B41J25/304
CPC分类号： B41J25/3082 , B41J25/308
摘要： An impact printer having a print head, the print head having a movable armature, a printing wire fixed to the armature, and sensor for detecting movement of the armature. The position of the armature is monitored based on an output of the sensor. A home sensor detects whether the print head is at a home position. A paper end sensor detect whether a printing medium is between the platen and the print head. A gap motor means adjusts a gap between the printing wire and the platen. A gap controller is responsive to detection signals output by said home sensor and said paper end sensor, for controlling the print head to swing the armature so as to cause the tip of said printing wire to strike the platen, determining a time of impact of the tip with the platen based on the monitored position of the armature, performing a comparison of the time of impact with a predetermined impact time, and outputting a drive signal to the gap motor for adjusting the gap according to a result of the comparison.
摘要翻译： 具有打印头的冲击打印机，打印头具有可移动的电枢，固定到电枢的打印线以及用于检测电枢的移动的传感器。 基于传感器的输出来监测电枢的位置。 家庭传感器检测打印头是否处于原始位置。 纸端传感器检测打印介质是否位于压板和打印头之间。 间隙电动机装置调节印刷线和压板之间的间隙。 间隙控制器响应由所述家用传感器和所述纸端传感器输出的检测信号，用于控制打印头摆动电枢，以使所述打印线的末端撞击所述压板，确定所述打印头的影响时间 基于电枢的监视位置对压板进行顶端，执行冲击时间与预定冲击时间的比较，并且根据比较结果将驱动信号输出到间隙电动机以调整间隙。
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2.发明授权Wire dot print head with print wires fixed to tip portions of armatures differentiated in resiliency 失效丝印打印头，打印线固定在不同弹性的电枢的尖端部分
公开(公告)号：US5651621A
公开(公告)日：1997-07-29
申请号：US498889
申请日：1995-07-06
IPC分类号： B41J2/28
CPC分类号： B41J2/28
摘要： Resiliency of a flat spring 7 corresponding to an end print wire 12 is set to be greater than that corresponding to a central print wire 12 by varying width of an effective spring portion 7b of a flat spring piece 7A to which an armature 13 is attached depending on positions of corresponding tips of the print wires 12. Distance between a magnet yoke 5 and a core 15 provided between the flat spring 7 and a permanent magnet 4 at a position corresponding to a central print wire 12 side is set to be smaller than that at a position corresponding to an end print wire 12 side by varying it depending on positions of corresponding tips of the print wires 12.
摘要翻译： 对应于端部印刷线12的平板弹簧7的弹性通过将电枢13所附接的平板弹簧片7A的有效弹簧部分7b的宽度变化而设置为大于对应于中央印刷线12的弹簧7的弹性力 在打印线12的相应末端的位置上。设置在与中心印刷线12侧对应的位置处的板簧7和永磁体4之间的磁轭5和芯15之间的距离设定为小于 通过根据打印丝12的相应末端的位置进行变化来对应于端部印刷线12侧的位置。
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公开(公告)号：US07813681B2
公开(公告)日：2010-10-12
申请号：US12054444
申请日：2008-03-25
申请人： Takanori Mimura , Junichi Ito , Shinichi Otani
发明人： Takanori Mimura , Junichi Ito , Shinichi Otani
IPC分类号： G03G15/08
CPC分类号： G03G15/0813
摘要： A contact pressure setting method of setting a contact pressure between contact members of an image forming apparatus. A film member is inserted into a gap between the contact members and the contact pressure is set so that a pulling force to pull out the film member lies within a predetermined range. Thus, the contact pressure can be accurately and easily recognized and the contact pressure can be set to be uniform.
摘要翻译： 一种设定图像形成装置的接触构件之间的接触压力的接触压力设定方法。 将膜构件插入到接触构件之间的间隙中，并且设定接触压力，使得拉出膜构件的拉力位于预定范围内。 因此，可以准确且容易地识别接触压力，并且可以将接触压力设定为均匀。
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公开(公告)号：US20060063385A1
公开(公告)日：2006-03-23
申请号：US11231979
申请日：2005-09-22
申请人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
发明人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32132
摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.
摘要翻译： 蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层 预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。 蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。
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公开(公告)号：US20120132367A1
公开(公告)日：2012-05-31
申请号：US13303392
申请日：2011-11-23
IPC分类号： H01L21/306 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/5096 , H01J37/32091 , H01J37/32366 , H01J37/32385 , H01J37/3244
摘要： There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.
摘要翻译： 提供了一种处理装置，其包括：处理气体排出单元，设置在处理室内，以面对安装台并构造成将处理气体排放到处理室中; 对应于处理目标对象的中心部分的第一空间; 对应于处理目标对象的边缘部分的第二空间; 形成在所述第一空间和所述第二空间之间的至少一个第三空间; 以及包括处理气体分配管和阀的处理气体分配单元。 这些空间设置在处理气体排出单元内并由分隔壁分隔开。 在空间处，形成有用于排出处理气体的排出孔。 处理气体分配管与空间连通，并且阀被打开或关闭以允许相邻处理气体分配管彼此连通或彼此隔离。
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公开(公告)号：US20110048453A1
公开(公告)日：2011-03-03
申请号：US12873458
申请日：2010-09-01
申请人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
发明人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
IPC分类号： C25F5/00
CPC分类号： C23C16/4405 , H01J37/32862
摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.
摘要翻译： 提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。 在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。
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公开(公告)号：US07344652B2
公开(公告)日：2008-03-18
申请号：US11487516
申请日：2006-07-17
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译： 一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。 在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。 将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。 掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。 因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。
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公开(公告)号：USD546873S1
公开(公告)日：2007-07-17
申请号：US29232694
申请日：2005-06-21
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公开(公告)号：US20060255447A1
公开(公告)日：2006-11-16
申请号：US11487516
申请日：2006-07-17
IPC分类号： H01L23/48
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译： 一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。 在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。 将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。 掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。 因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。
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公开(公告)号：USD529076S1
公开(公告)日：2006-09-26
申请号：US29232693
申请日：2005-06-21
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