公开(公告)号：US07960281B2

公开(公告)日：2011-06-14

申请号：US12323507

申请日：2008-11-26

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/44

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the nMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成nMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅电极（14）作为掩模，注入具有较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成nMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了nMOS晶体管的载流子迁移率。

公开(公告)号：US06872642B2

公开(公告)日：2005-03-29

申请号：US10442226

申请日：2003-05-21

申请人： Hidekazu Oda ,  Hirokazu Sayama ,  Kazunobu Ohta ,  Kouhei Sugihara

发明人： Hidekazu Oda ,  Hirokazu Sayama ,  Kazunobu Ohta ,  Kouhei Sugihara

IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786 ,  H01L21/425

CPC分类号： H01L21/823814 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/823835 ,  H01L29/665 ,  H01L29/6659

摘要： A method of manufacturing a semiconductor device is provided which can suppress leakage current increases by making into silicide. Impurity that suppresses silicide formation reaction (suppression impurity), such as germanium, is introduced into source/drain regions (16, 36) from their upper surfaces. In the source/drain regions (16, 36), a region shallower than a region where the suppression impurity is distributed (50) is made into silicide, so that a silicide film (51) is formed in the source/drain regions (16, 36). Thus, by making the region shallower than the region (50) into silicide, it is possible to suppress that silicide formation reaction extends to the underside of the region to be made into silicide. This enables to reduce the junction leakage between the source/drain regions (16, 36) and a well region.

摘要翻译： 提供一种制造半导体器件的方法，其可以通过制造硅化物来抑制泄漏电流的增加。 抑制硅化物形成反应（抑制杂质）如锗的杂质从其上表面引入源/漏区（16,36）。 在源极/漏极区域（16,36）中，将比抑制杂质分布区域浅的区域（50）制成硅化物，使得在源极/漏极区域（16）中形成硅化物膜（51） ，36）。 因此，通过使区域（50）的区域比硅化物更浅，可以抑制硅化物形成反应延伸到要制成硅化物的区域的下侧。 这使得能够减少源极/漏极区域（16,36）与阱区域之间的结漏电。

公开(公告)号：US06906393B2

公开(公告)日：2005-06-14

申请号：US10620379

申请日：2003-07-17

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the nMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成nMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅电极（14）作为掩模，注入具有较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成nMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了nMOS晶体管的载流子迁移率。

公开(公告)号：US20110207312A1

公开(公告)日：2011-08-25

申请号：US13103558

申请日：2011-05-09

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/283

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the nMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成nMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅极（14）作为掩模，注入具有相对较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成nMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了nMOS晶体管的载流子迁移率。

公开(公告)号：US07470618B2

公开(公告)日：2008-12-30

申请号：US11671216

申请日：2007-02-05

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/44

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the nMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成nMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅电极（14）作为掩模，注入具有较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成nMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了nMOS晶体管的载流子迁移率。

公开(公告)号：US07183204B2

公开(公告)日：2007-02-27

申请号：US11127093

申请日：2005-05-12

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/44

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an NMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the NMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the NMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成NMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅电极（14）作为掩模，注入具有较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成NMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了NMOS晶体管的载流子迁移率。

公开(公告)号：US20050202603A1

公开(公告)日：2005-09-15

申请号：US11127093

申请日：2005-05-12

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/84

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an NMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the NMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the NMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成NMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅电极（14）作为掩模，注入具有较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成NMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了NMOS晶体管的载流子迁移率。

公开(公告)号：US08372747B2

公开(公告)日：2013-02-12

申请号：US13103558

申请日：2011-05-09

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/44

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced.

公开(公告)号：US20070128816A1

公开(公告)日：2007-06-07

申请号：US11671216

申请日：2007-02-05

申请人： Hirokazu SAYAMA ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu SAYAMA ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21/336

CPC分类号： H01L29/7845 ,  H01L21/26506 ,  H01L21/32155 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10805 ,  H01L27/10844 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/7842 ,  H01L29/7848

摘要： A gate insulating film (13) and a gate electrode (14) of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate (10). Using the gate electrode (14) as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode (14) is amorphized. Subsequently, a silicon oxide film (40) is provided to cover the gate electrode (14), at a temperature which is less than the one at which recrystallization of the gate electrode (14) occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode (14), and high tensile stress is applied to a channel region under the gate electrode (14). As a result, carrier mobility of the nMOS transistor is enhanced.

摘要翻译： 在硅衬底（10）上设置用于形成nMOS晶体管的非单晶硅的栅极绝缘膜（13）和栅电极（14）。 使用栅电极（14）作为掩模，注入具有较大质量数（70以上）的诸如As离子或Sb离子的n型掺杂剂，以形成nMOS晶体管的源极/漏极区域，由此， 栅电极（14）非晶化。 随后，提供氧化硅膜（40）以比栅电极（14）再结晶发生的温度小的温度覆盖栅电极（14）。 此后，在约1000℃的温度下进行热处理，由此在栅电极（14）上施加高的压缩残余应力，并且对栅电极（14）下的沟道区域施加高的拉伸应力。 结果，增强了nMOS晶体管的载流子迁移率。

公开(公告)号：US06835610B2

公开(公告)日：2004-12-28

申请号：US10452309

申请日：2003-06-03

申请人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

发明人： Hirokazu Sayama ,  Kazunobu Ohta ,  Hidekazu Oda ,  Kouhei Sugihara

IPC分类号： H01L21336

CPC分类号： H01L21/28052 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/28518 ,  H01L21/32155 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/665

摘要： A method of manufacturing a semiconductor device includes forming a gate insulating film on a semiconductor substrate, forming a polysilicon layer on the gate insulating film, implanting ions into the polysilicon layer, patterning the polysilicon layer to form a gate electrode, annealing the gate electrode, and siliciding an upper portion of the gate electrode to form a silicide layer that has a lower portion facing the gate electrode and an upper portion opposite to the lower portion, the upper portion of the silicide layer being wider than the lower portion. A total dose of ions implanted during the step of implanting is 6×1015/cm2 or larger.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜，在栅极绝缘膜上形成多晶硅层，将离子注入到多晶硅层中，构图多晶硅层以形成栅电极，退火栅电极， 并且将所述栅电极的上部硅化，以形成具有面向所述栅电极的下部和与所述下部相对的上部的硅化物层，所述硅化物层的上部比所述下部宽。 在植入步骤期间植入的离子的总剂量为6×10 15 / cm 2以上。