公开(公告)号：US07486142B2

公开(公告)日：2009-02-03

申请号：US11618197

申请日：2006-12-29

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Yoshiaki Harasawa ,  Makoto Tabei

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Yoshiaki Harasawa ,  Makoto Tabei

IPC分类号： H03G3/30

CPC分类号： H03G3/3047 ,  H03F1/302 ,  H03F3/195 ,  H03F3/343 ,  H03F2200/447 ,  H03F2200/451

摘要： The present invention is directed to compensate electric properties of an RF power module depending on changes with time, temperature dependency, variations, and the like of grounded emitter current amplification factor of an HBT. A compound semiconductor integrated circuit supplies reference current of a reference HBT depending on hFE of an HBT to an input terminal of a first current mirror of a bias circuit of a silicon semiconductor integrated circuit. The base of an output HBT of the compound semiconductor integrated circuit is biased with bias current which increases in response to decrease in hFE of the HBT from an output of the first current mirror of the silicon semiconductor integrated circuit.

摘要翻译： 本发明旨在根据HBT的接地发射极电流放大因子随时间，温度依赖性，变化等的变化来补偿RF功率模块的电性能。 化合物半导体集成电路将HBT的hFE的参考电流提供给硅半导体集成电路的偏置电路的第一电流镜的输入端。 化合物半导体集成电路的输出HBT的基极由偏置电流偏置，该偏置电流响应于HBT的hFE从硅半导体集成电路的第一电流镜的输出的减小而增加。

公开(公告)号：US20070194852A1

公开(公告)日：2007-08-23

申请号：US11618197

申请日：2006-12-29

申请人： Hirokazu Tsuromaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Yoshiaki Harasawa ,  Makoto Tabei

发明人： Hirokazu Tsuromaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Yoshiaki Harasawa ,  Makoto Tabei

IPC分类号： H03G3/10

CPC分类号： H03G3/3047 ,  H03F1/302 ,  H03F3/195 ,  H03F3/343 ,  H03F2200/447 ,  H03F2200/451

摘要： The present invention is directed to compensate electric properties of an RF power module depending on changes with time, temperature dependency, variations, and the like of grounded emitter current amplification factor of an HBT. A compound semiconductor integrated circuit supplies reference current of a reference HBT depending on hFE of an HBT to an input terminal of a first current mirror of a bias circuit of a silicon semiconductor integrated circuit. The base of an output HBT of the compound semiconductor integrated circuit is biased with bias current which increases in response to decrease in hFE of the HBT from an output of the first current mirror of the silicon semiconductor integrated circuit.

摘要翻译： 本发明旨在根据HBT的接地发射极电流放大因子随时间，温度依赖性，变化等的变化来补偿RF功率模块的电性能。 化合物半导体集成电路将HBT的hFE的参考电流提供给硅半导体集成电路的偏置电路的第一电流镜的输入端。 化合物半导体集成电路的输出HBT的基极由偏置电流偏置，该偏置电流响应于HBT的hFE从硅半导体集成电路的第一电流镜的输出的减小而增加。

公开(公告)号：US07304539B2

公开(公告)日：2007-12-04

申请号：US10960097

申请日：2004-10-08

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03G3/10

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US07629851B2

公开(公告)日：2009-12-08

申请号：US12234833

申请日：2008-09-22

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03G3/10

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US20050083129A1

公开(公告)日：2005-04-21

申请号：US10960097

申请日：2004-10-08

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03F1/30 ,  H03G1/00 ,  H03G3/10

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US07443245B2

公开(公告)日：2008-10-28

申请号：US11976638

申请日：2007-10-26

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03G3/10

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US20090072906A1

公开(公告)日：2009-03-19

申请号：US12234833

申请日：2008-09-22

申请人： Hirokazu TSURUMAKI ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu TSURUMAKI ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03G3/00 ,  H03F3/16

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US07501896B2

公开(公告)日：2009-03-10

申请号：US11822183

申请日：2007-07-03

申请人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

发明人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

IPC分类号： H03F3/04

CPC分类号： H01L27/0629 ,  H01L2223/6644 ,  H01L2223/665 ,  H03F1/301 ,  H03F3/195

摘要： A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics is reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.

摘要翻译： 高频功率放大器电子部件（RF功率模块）被构造成以当前反射镜配置向放大器FET施加偏压。 在该RF功率模块中，由于FET的短沟道效应导致​​的偏置点的偏差被校正，并且降低了高频功率放大器特性的变化。 高频功率放大器电路（RF功率模块）被构造成使得高频功率放大器电路中的放大器晶体管的偏置电压以与当前反射镜配置的放大器晶体管连接的偏置晶体管提供。 除了与放大器晶体管的控制端子连接的焊盘（外部端子）之外，还提供了第二焊盘，其以与电流镜配置的放大器晶体管连接的偏置晶体管的控制端子连接。

公开(公告)号：US20080191806A1

公开(公告)日：2008-08-14

申请号：US11822183

申请日：2007-07-03

申请人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

发明人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

IPC分类号： H03F3/04

CPC分类号： H01L27/0629 ,  H01L2223/6644 ,  H01L2223/665 ,  H03F1/301 ,  H03F3/195

摘要： A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics is reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.

摘要翻译： 高频功率放大器电子部件（RF功率模块）被构造成以当前反射镜配置向放大器FET施加偏压。 在该RF功率模块中，由于FET的短沟道效应导致​​的偏置点的偏差被校正，并且降低了高频功率放大器特性的变化。 高频功率放大器电路（RF功率模块）被构造成使得高频功率放大器电路中的放大器晶体管的偏置电压以与当前反射镜配置的放大器晶体管连接的偏置晶体管提供。 除了与放大器晶体管的控制端子连接的焊盘（外部端子）之外，还提供了第二焊盘，其以与电流镜配置的放大器晶体管连接的偏置晶体管的控制端子连接。

公开(公告)号：US07245184B2

公开(公告)日：2007-07-17

申请号：US10858373

申请日：2004-06-02

申请人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

发明人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

IPC分类号： H03F3/04

CPC分类号： H01L27/0629 ,  H01L2223/6644 ,  H01L2223/665 ,  H03F1/301 ,  H03F3/195

摘要： A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.

摘要翻译： 高频功率放大器电子部件（RF功率模块）被构造成以当前反射镜配置向放大器FET施加偏压。 在该RF功率模块中，校正了由于FET的短沟道效应引起的偏置点的偏差，并且降低了高频功率放大器特性的变化。 高频功率放大器电路（RF功率模块）被构造成使得高频功率放大器电路中的放大器晶体管的偏置电压以与当前反射镜配置的放大器晶体管连接的偏置晶体管提供。 除了与放大器晶体管的控制端子连接的焊盘（外部端子）之外，还提供了第二焊盘，其以与电流镜配置的放大器晶体管连接的偏置晶体管的控制端子连接。