Vehicle behavior detector, in-vehicle processing system, detection information calibrator, and in-vehicle processor
    1.
    发明授权
    Vehicle behavior detector, in-vehicle processing system, detection information calibrator, and in-vehicle processor 有权
    车辆行为检测器,车载处理系统,检测信息校准器和车载处理器

    公开(公告)号:US07096116B2

    公开(公告)日:2006-08-22

    申请号:US10747448

    申请日:2003-12-30

    IPC分类号: G01C21/26 G01S1/00

    摘要: A vehicle behavior detector obtains detection information from autonomous sensors to detect a change in vehicle behavior. The detection information is calibrated based on position, bearing, and vehicle speed information obtained from a GPS receiver. For example, the vehicle behavior detector calibrates detection information obtained from the vehicle speed sensor and the angular speed sensor with a Kalman filter process. It is difficult to use only the autonomous sensors to calibrate characteristics changes due to individual sensor differences, environmental changes, and aged deterioration. With using GPS information for calibration, the vehicle behavior detector can accurately detect the vehicle behavior. The accuracy is improved for detection information itself to be output from the vehicle behavior detector to external apparatuses. Using this calibrated detection information, the external apparatuses can perform processes appropriately.

    摘要翻译: 车辆行为检测器从自主传感器获取检测信息,以检测车辆行为的变化。 基于从GPS接收器获得的位置,方位和车速信息校准检测信息。 例如,车辆行为检测器通过卡尔曼滤波处理来校准从车速传感器和角速度传感器获得的检测信息。 仅使用自主传感器来校准由于各个传感器差异,环境变化和老化变差引起的特性变化是困难的。 使用GPS信息进行校准,车辆行为检测器可以准确地检测车辆行为。 提高了检测信息本身从车辆行为检测器输出到外部装置的精度。 使用该校准的检测信息,外部设备可以适当地执行处理。

    Ultrasonic probe and ultrasonic imaging apparatus using the same
    3.
    发明授权
    Ultrasonic probe and ultrasonic imaging apparatus using the same 有权
    超声波探头和超声波成像设备使用相同

    公开(公告)号:US09138203B2

    公开(公告)日:2015-09-22

    申请号:US13581441

    申请日:2011-02-17

    摘要: In order to provide an ultrasonic probe capable of suppressing the influence of multiple reflections occurring on the interface of a transducer with a CMUT chip and a backing layer, an ultrasonic probe of the present invention has a structure where an acoustic lens 14, transducers 11-1 to 11-m, and a backing layer 12 are laminated. Each of the transducers 11-1 to 11-m has a CMUT chip, and the backing layer 12 is formed of a material with a value of substantially the same acoustic impedance as the acoustic lens 14.

    摘要翻译: 为了提供能够抑制在具有CMUT芯片和背衬层的换能器的界面上发生的多次反射的影响的超声波探头,本发明的超声波探头具有以下结构:声透镜14,换能器11- 1〜11μm,层叠背衬层12。 换能器11-1至11-m中的每一个具有CMUT芯片,并且背衬层12由具有与声学透镜14基本相同的声阻抗值的材料形成。

    Projection display apparatus and control method therefor
    4.
    发明授权
    Projection display apparatus and control method therefor 有权
    投影显示装置及其控制方法

    公开(公告)号:US09086614B2

    公开(公告)日:2015-07-21

    申请号:US13814224

    申请日:2010-09-03

    IPC分类号: G03B21/14 G03B21/20 H04N9/31

    摘要: A projection display apparatus comprises a lamp; a display element that modulates light emitted from the lamp according to an amplitude of the image signal, and emits the light as the image light; a light intensity controller that changes a lamp power according to a power changing operation, and, if the changed lamp power is lower than a rated power of the lamp and supplied to the lamp for a certain period of time, increases the lamp power and then reduces the lamp power to an original power, identifies an amplitude of the image signal where an intensity of the image light is constant before and after the change of the lamp power; and an image signal controller that controls the amplitude of the image signal to the identified amplitude, and supplies the display element with the image signal.

    摘要翻译: 投影显示装置包括灯; 显示元件,其根据图像信号的幅度调制从灯发出的光,并且发射光作为图像光; 根据功率变化动作改变灯具功率的光强度控制器,如果变更的灯功率低于灯的额定功率并提供给灯一段时间,则增加灯的功率,然后 将灯功率降低到原始功率,识别在灯功率改变之前和之后图像光的强度恒定的图像信号的幅度; 以及图像信号控制器,其将图像信号的幅度控制为所识别的幅度,并且向显示元件提供图像信号。

    Pattern forming method
    5.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号:US08974680B2

    公开(公告)日:2015-03-10

    申请号:US13426166

    申请日:2012-03-21

    摘要: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymers, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.

    摘要翻译: 图案形成方法包括形成含有具有第一接合基团的亲水性第一均聚物和具有能够与第一接合基团键合的第二接合基团的疏水性第二均聚物的涂膜,在第一和第二接合基团之间形成键,以产生 第一和第二均聚物的嵌段共聚物,并加热涂膜以将共聚物微相分离成亲水结构域和疏水结构域。 亲水和疏水畴交替排列。 该键断裂,然后通过溶剂选择性溶解除去任一结构域,以提供其余结构域的聚合物图案。

    POLYURETHANE FILM AND PROCESSED FILM PRODUCED USING SAME
    6.
    发明申请
    POLYURETHANE FILM AND PROCESSED FILM PRODUCED USING SAME 有权
    聚氨酯薄膜和使用其制造的加工薄膜

    公开(公告)号:US20140163164A1

    公开(公告)日:2014-06-12

    申请号:US14235721

    申请日:2012-06-29

    IPC分类号: C09D175/04

    摘要: A problem to be solved by the present invention is to provide a polyurethane film that offers both soft texture and high strength. The present invention relates to a polyurethane film obtained by solidifying a polyurethane (A) obtained by reacting a polyol (a1) including an aliphatic polyester polyol having an anionic group (a1-1), and a polyester polyol (a1-2) other than the aliphatic polyester polyol (a1-1) with a polyisocyanate (a2), using a metal salt, in which the polyurethane (A) has an aromatic structure in the range of 500 mmol/kg to 2,000 mmol/kg with respect to the entire polyurethane (A).

    摘要翻译: 本发明要解决的问题是提供一种具有柔软质感和高强度的聚氨酯薄膜。 本发明涉及通过使包含具有阴离子性基团(a1-1)的脂肪族聚酯多元醇的多元醇(a1)和除了阴离子性基团(a1-1)以外的聚酯多元醇(a1-2)的反应而得到的聚氨酯(A) 脂肪族聚酯多元醇(a1-1)与多异氰酸酯(a2),使用金属盐,其中聚氨酯(A)的芳族结构相对于整体为500mmol / kg〜2000mmol / kg 聚氨酯(A)。

    Structure for recording medium
    9.
    发明授权
    Structure for recording medium 有权
    记录介质结构

    公开(公告)号:US08377551B2

    公开(公告)日:2013-02-19

    申请号:US13425676

    申请日:2012-03-21

    摘要: A structure includes a substrate, a first layer formed on the substrate, and a second layer formed on the first layer. The first layer is comprised of self-assembled monolayer and contains 4-(6-hydroxyhexyloxy)-4′-methoxybiphenyl. The second layer is obtained by micro-phase separation of a block copolymer containing a hydrophilic polymer comprised of polyethylene oxide and a hydrophobic polymer comprised of polymethacrylic acid containing azobenzene at the side chain. The second layer contains a cylinder phase with its long axis being oriented perpendicular to the substrate. The thickness T of the second layer is within a range of A≦T≦50 nm, where A is a phase separation period length satisfying 5 nm≦A≦50 nm.

    摘要翻译: 一种结构包括基板,形成在基板上的第一层和形成在第一层上的第二层。 第一层由自组装单层组成并含有4-(6-羟基己氧基)-4'-甲氧基联苯。 第二层通过包含由聚环氧乙烷构成的亲水性聚合物和由侧链上含有偶氮苯的聚甲基丙烯酸构成的疏水性聚合物的嵌段共聚物进行微相分离而获得。 第二层包含圆柱相,其长轴垂直于基底取向。 第二层的厚度T在A< NlE; T≦̸ 50nm的范围内,其中A是满足5nm& NlE; A& NlE; 50nm的相分离周期长度。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08263452B2

    公开(公告)日:2012-09-11

    申请号:US12554339

    申请日:2009-09-04

    摘要: A semiconductor device has an n-channel MIS transistor and a p-channel MIS transistor on a substrate. The n-channel MIS transistor includes a p-type semiconductor region formed on the substrate, a lower layer gate electrode which is formed via a gate insulating film above the p-type semiconductor region and which is one monolayer or more and 3 nm or less in thickness, and an upper layer gate electrode which is formed on the lower layer gate electrode, whose average electronegativity is 0.1 or more smaller than the average electronegativity of the lower layer gate electrode. The p-channel MIS transistor includes an n-type semiconductor region formed on the substrate and a gate electrode which is formed via a gate insulating film above the n-type semiconductor region and is made of the same metal material as that of the upper layer gate electrode.

    摘要翻译: 半导体器件在衬底上具有n沟道MIS晶体管和p沟道MIS晶体管。 n沟道MIS晶体管包括形成在基板上的p型半导体区域,通过p型半导体区域上方的栅极绝缘膜形成并且为单层以上且3nm以下的下层栅电极 以及形成在下层栅电极上的上层栅电极,其平均电负性比下层栅电极的平均电负性小0.1或更小。 p沟道MIS晶体管包括形成在衬底上的n型半导体区域和通过n型半导体区域上方的栅极绝缘膜形成并由与上层相同的金属材料制成的栅电极 栅电极。