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1.发明授权公开(公告)号：US07289305B2
公开(公告)日：2007-10-30
申请号：US11074643
申请日：2005-03-09
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译： 磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性 间隔层和无磁化层。
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2.发明申请公开(公告)号：US20050201020A1
公开(公告)日：2005-09-15
申请号：US11074643
申请日：2005-03-09
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译： 磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性 间隔层和无磁化层。
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3.发明授权公开(公告)号：US07593195B2
公开(公告)日：2009-09-22
申请号：US11609557
申请日：2006-12-12
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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4.发明授权公开(公告)号：US07301733B1
公开(公告)日：2007-11-27
申请号：US10400690
申请日：2003-03-28
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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公开(公告)号：US08929035B2
公开(公告)日：2015-01-06
申请号：US12468467
申请日：2009-05-19
IPC分类号： G11B5/60 , G11B5/33 , G11B5/39 , H01F10/193 , B82Y40/00 , G01R33/09 , B82Y25/00 , H01L43/08 , H01F41/30 , G11C11/16 , H01L27/22 , H01F10/32
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.
摘要翻译： 具有磁阻效应膜和一对电极的磁阻效应元件，具有第一磁性层的磁阻效应膜，其磁化方向基本上被固定在一个方向上;第二磁化层，其磁化方向响应于外部磁性而变化 位于第一和第二磁性层之间的非磁性中间层，以及设置在第一磁性层中的第二磁性层中在第一磁性层和非磁性中间层之间的界面处的膜，和/或 第二磁性层和非磁性中间层之间的界面。
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6.发明授权公开(公告)号：US07505234B2
公开(公告)日：2009-03-17
申请号：US11930699
申请日：2007-10-31
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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7.发明申请MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 审中-公开磁阻效应元件，磁头，磁力再生装置和磁记忆公开(公告)号：US20080068764A1
公开(公告)日：2008-03-20
申请号：US11931089
申请日：2007-10-31
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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8.发明申请公开(公告)号：US20090225477A1
公开(公告)日：2009-09-10
申请号：US12468467
申请日：2009-05-19
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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9.发明申请公开(公告)号：US20090141408A1
公开(公告)日：2009-06-04
申请号：US12366972
申请日：2009-02-06
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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10.发明授权公开(公告)号：US07843669B2
公开(公告)日：2010-11-30
申请号：US12366972
申请日：2009-02-06
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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