公开(公告)号：US20050258162A1

公开(公告)日：2005-11-24

申请号：US11194337

申请日：2005-08-01

申请人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

发明人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

IPC分类号： H01L21/00 ,  F27B5/14 ,  A21B1/00 ,  C23C16/00

CPC分类号： H01L21/67248 ,  F27B17/0025 ,  F27D5/0037 ,  F27D19/00 ,  F27D99/0006 ,  H01L21/67115

摘要： A light source comprising a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. Thus provided is a thermal processing apparatus using the flash lamps, capable of readily controlling the intensity of irradiation.

摘要翻译： 包括多个闪光灯的光源发出闪光，从而闪光加热由热漫射器和热板保持的半导体晶片。 保持半导体晶片和光源的热扩散器和热板之间的照射距离被调节以达到预定的照射强度。 可以通过垂直移动热扩散器和热板来改变或校正热扩散器与热板和光源之间的照射距离。 因此，提供了能够容易地控制照射强度的使用闪光灯的热处理装置。

公开(公告)号：US07381928B2

公开(公告)日：2008-06-03

申请号：US11194337

申请日：2005-08-01

申请人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

发明人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

IPC分类号： F27D11/00 ,  A21B2/00

CPC分类号： H01L21/67248 ,  F27B17/0025 ,  F27D5/0037 ,  F27D19/00 ,  F27D99/0006 ,  H01L21/67115

摘要： A light source including a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. The thermal processing apparatus which uses the flash lamps, is thus capable of readily controlling the intensity of irradiation.

摘要翻译： 包括多个闪光灯的光源发出闪光，从而对由热扩散器和热板保持的半导体晶片进行闪光加热。 保持半导体晶片和光源的热扩散器和热板之间的照射距离被调节以达到预定的照射强度。 可以通过垂直移动热扩散器和热板来改变或校正热扩散器与热板和光源之间的照射距离。 因此，使用闪光灯的热处理装置能够容易地控制照射强度。

公开(公告)号：US20060081596A1

公开(公告)日：2006-04-20

申请号：US11292612

申请日：2005-12-02

申请人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

发明人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

IPC分类号： A21B1/00 ,  A21B1/22 ,  F27D11/00

CPC分类号： H01L21/67248 ,  F27B17/0025 ,  F27D5/0037 ,  F27D19/00 ,  F27D99/0006 ,  H01L21/67115

摘要： A light source including a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. The thermal processing apparatus which uses the flash lamps, is thus capable of readily controlling the intensity of irradiation.

摘要翻译： 包括多个闪光灯的光源发出闪光，从而对由热扩散器和热板保持的半导体晶片进行闪光加热。 保持半导体晶片和光源的热扩散器和热板之间的照射距离被调节以达到预定的照射强度。 可以通过垂直移动热扩散器和热板来改变或校正热扩散器与热板和光源之间的照射距离。 因此，使用闪光灯的热处理装置能够容易地控制照射强度。

公开(公告)号：US06998580B2

公开(公告)日：2006-02-14

申请号：US10347610

申请日：2003-01-20

申请人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

发明人： Tatsufumi Kusuda ,  Yasuhiro Imaoka ,  Hiromi Murayama ,  Norio Yamamoto ,  Naoto Mori ,  Yoko Yoshihara

IPC分类号： F27D11/00

CPC分类号： H01L21/67248 ,  F27B17/0025 ,  F27D5/0037 ,  F27D19/00 ,  F27D99/0006 ,  H01L21/67115

摘要： A light source comprising a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. Thus provided is a thermal processing apparatus using the flash lamps, capable of readily controlling the intensity of irradiation.

公开(公告)号：US06856762B2

公开(公告)日：2005-02-15

申请号：US10645067

申请日：2003-08-21

申请人： Tatsufumi Kusuda ,  Hiromi Murayama ,  Yasuhiro Imaoka

发明人： Tatsufumi Kusuda ,  Hiromi Murayama ,  Yasuhiro Imaoka

IPC分类号： H01L21/26 ,  H01L21/00 ,  H05B3/00 ,  F26B19/00

CPC分类号： H01L21/67115 ,  H05B3/0047

摘要： In a light diffuser, a strong light diffusion processing is performed to a lamp corresponding part located in a vertical immediate downward direction of each of a plurality of flash lamps, and a weak light diffusion processing is performed to an inter-lamp corresponding part located between lamp corresponding parts adjacent to each other. Thereby, the light transmittance of the lamp corresponding part is lower than that of the inter-lamp corresponding part. Light that is emitted from each of the flash lamps and directed to a vertical immediate downward direction is diffused intensely, while reducing the degree of light diffusion at a location immediately below space between the adjacent flash lamps, thereby improving in-plane uniformity of illumination distribution on a semiconductor wafer. This enables to provide a thermal processing apparatus capable of improving in-plane uniformity of illumination distribution on a substrate.

摘要翻译： 在光扩散器中，对位于多个闪光灯中的每一个的垂直立即向下方向的灯对应部分进行强光扩散处理，并且对位于 灯对应部件相邻。 因此，灯对应部分的透光率低于灯间对应部分的透光率。 从每个闪光灯发射并被引导到垂直立即向下方向的光被强烈扩散，同时减少在相邻闪光灯之间的空间之下的位置处的光漫射程度，从而提高照明分布的面内均匀性 在半导体晶片上。 这能够提供能够提高基板上的照明分布的面内均匀性的热处理装置。

公开(公告)号：US07062161B2

公开(公告)日：2006-06-13

申请号：US10661240

申请日：2003-09-11

申请人： Tatsufumi Kusuda ,  Akihiro Hosokawa ,  Hiromi Murayama

发明人： Tatsufumi Kusuda ,  Akihiro Hosokawa ,  Hiromi Murayama

IPC分类号： F26B19/00

CPC分类号： H01L21/68735 ,  H01L21/68792

摘要： A susceptor is formed with a cavity having a tapered surface and a receiving surface. The gradient α of the tapered surface with respect to the receiving surface is set to at least 5° and less than 30°, so that a semiconductor wafer received by the susceptor can be located on the receiving surface through the tapered surface while the semiconductor wafer can be protected against excess stress also when the surface of the wafer abruptly thermally expands due to flashlight irradiation and can be prevented from cracking in thermal processing. Thus provided are a thermal processing susceptor and a thermal processing apparatus capable of preventing a substrate from cracking in thermal processing.

摘要翻译： 基座形成有具有锥形表面和接收表面的空腔。 锥形表面相对于接收表面的梯度α设定为至少5°且小于30°，使得由基座接收的半导体晶片可以通过锥形表面位于接收表面上，而半导体晶片 当晶片的表面由于手电筒照射而突然热膨胀时，也可以防止过度的应力，并且可以防止热处理中的裂纹。 因此，能够防止热处理中的基板破裂的热处理基座和热处理装置。

公开(公告)号：US07091453B2

公开(公告)日：2006-08-15

申请号：US10780420

申请日：2004-02-17

申请人： Hiromi Murayama ,  Tatsufumi Kusuda

发明人： Hiromi Murayama ,  Tatsufumi Kusuda

IPC分类号： F27B5/14

CPC分类号： H01L21/67115 ,  F27B17/0025

摘要： A chamber has a wall surface fitted with a liner. The liner is removably provided to the chamber with no fixed relation therebetween. By simply opening a light source to remove a heat diffusion plate, a hot plate and a tubular member from the chamber, the liner can be easily detached accordingly from the chamber. When a semiconductor wafer cracks to litter the chamber with its fragments, the chamber can be easily cleaned by simply detaching the liner. The liner has an outer surface subjected to surface roughening by honing. When a flash lamp emits flashlight of considerably high intensity, the roughened outer surface of the liner serves to block this flashlight. As a result, the metal surface inside the chamber is prevented from being exposed to the flashlight emitted from the flash lamp.

摘要翻译： 室具有装有衬垫的壁面。 衬套可移除地设置在腔室之间，其间没有固定的关系。 通过简单地打开光源以从腔室移除热扩散板，热板和管状构件，衬套可以容易地从腔室分离。 当半导体晶片以其碎片的方式破裂而对室进行垃圾处理时，可以通过简单地拆卸衬套来轻松清洁室。 衬套具有通过珩磨进行表面粗糙化的外表面。 当闪光灯发射相当高强度的手电筒时，衬套的粗糙的外表面用于阻挡该手电筒。 结果，防止室内的金属表面暴露于从闪光灯发射的手电筒。

公开(公告)号：US07327947B2

公开(公告)日：2008-02-05

申请号：US11158985

申请日：2005-06-22

申请人： Tatsufumi Kusuda

发明人： Tatsufumi Kusuda

IPC分类号： A21B2/00

CPC分类号： H01L21/67115 ,  C30B31/12 ,  H01L21/324

摘要： A heat treating apparatus for heat treating a substrate by irradiating the substrate with light includes a heat treating chamber for receiving the substrate, a heating plate for preheating the substrate through a thermal diffuser plate, xenon flashlamps for heating the substrate preheated by the heating plate, to a treating temperature by irradiating the substrate with flashes of light, and a decompression mechanism for decompressing the heat treating chamber when the xenon flashlamps heat the substrate.

摘要翻译： 用于通过用光照射基板来热处理基板的热处理装置包括：用于接收基板的热处理室，用于通过热扩散板预热基板的加热板，用于加热由加热板预热的基板的氙闪光灯， 通过用闪光灯照射基板到处理温度，以及当氙闪光灯加热基板时减压热处理室的减压机构。

公开(公告)号：US06885815B2

公开(公告)日：2005-04-26

申请号：US10620874

申请日：2003-07-16

申请人： Tatsufumi Kusuda ,  Yuko Ikumi

发明人： Tatsufumi Kusuda ,  Yuko Ikumi

IPC分类号： H01L21/00 ,  F26B19/00

CPC分类号： H01L21/67248 ,  H01L21/67115

摘要： A plurality of flash lamps are covered with a reflector. Optical fiber members are attached to the reflector on portions located immediately above the flash lamps. When the flash lamps emit flash light toward a semiconductor wafer, the optical fiber members partially guide the emitted light so that a CCD measures the intensity of light emitted from each of the plurality of flash lamps. A computer detects the emission state of each of the plurality of flash lamps on the basis of a result of measurement. At this time, the computer compares standard luminous intensity obtained when the irradiation state on the semiconductor wafer satisfies a prescribed criterion with the luminous intensity in actual processing for detecting the emission states of the plurality of flash lamps. Thus provided is a thermal processing apparatus capable of reliably and simply detecting deterioration of lamps.

摘要翻译： 多个闪光灯被反射器覆盖。 光纤构件在紧邻闪光灯的上方的部分附接到反射器。 当闪光灯朝向半导体晶片发射闪光时，光纤部件部分地引导发射的光，使得CCD测量从多个闪光灯中的每一个发射的光的强度。 计算机基于测量结果检测多个闪光灯中的每一个的发射状态。 此时，计算机将当半导体晶片上的照射状态满足规定标准时获得的标准发光强度与用于检测多个闪光灯的发光状态的实际处理中的发光强度进行比较。 因此，能够可靠且简单地检测灯的劣化的热处理装置。

公开(公告)号：US5568252A

公开(公告)日：1996-10-22

申请号：US363535

申请日：1994-12-23

申请人： Tatsufumi Kusuda ,  Motohiro Kouno ,  Ikuyoshi Nakatani ,  Sadao Hirae

发明人： Tatsufumi Kusuda ,  Motohiro Kouno ,  Ikuyoshi Nakatani ,  Sadao Hirae

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01B11/0641 ,  G01B11/0625 ,  H01L22/12 ,  H01L2924/0002

摘要： Reflectance measurement with two monochromatic light beams having different wavelengths is used to obtain curves respective representing the relationship between an insulation film thickness of a semiconductor wafer and the gap between a test electrode and a semiconductor wafer surface. The C-V curve measurement at a fixed gap determines a total capacity of the gap and the insulation film, and a straight line representing the relationship between the gap and the insulation film thickness is obtained from the total capacity. An intersection where the two curves and the straight line cross gives the true values of the gap and the insulation film thickness. Other possible methods include: one for executing the C-V curve measurement and the reflectance measurement with two linear polarized light beams having identical wavelengths but different polarization directions; one for executing the reflectance measurement with three monochromatic light beams that differ in at least wavelength and/or polarization direction; and one for executing the reflectance measurement and the C-V curve measurement for two different gaps.

摘要翻译： 使用具有不同波长的两个单色光束的反射率测量来获得各自表示半导体晶片的绝缘膜厚度与测试电极和半导体晶片表面之间的间隙之间的关系的曲线。 以固定间隙的C-V曲线测量确定了间隙和绝缘膜的总容量，并且从总容量获得了表示间隙和绝缘膜厚度之间的关系的直线。 两条曲线和直线交叉的交叉点给出了间隙和绝缘膜厚度的真实值。 其他可能的方法包括：用于使用具有相同波长但不同偏振方向的两个线偏振光进行C-V曲线测量和反射率测量的方法; 一个用于在至少波长和/或偏振方向上不同的三个单色光束执行反射测量; 一个用于执行两个不同间隙的反射率测量和C-V曲线测量。