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    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE
    1.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE 失效
    氮化物半导体发光二极管器件

    公开(公告)号：US20100314642A1

    公开(公告)日：2010-12-16

    申请号：US12446385

    申请日：2007-10-19

    申请人： Hiromitsu Kudo ,  Hirokazu Taniguchi ,  Hiroaki Okagawa ,  Shin Hiraoka ,  Takahide Joichi ,  Toshihiko Shima

    发明人： Hiromitsu Kudo ,  Hirokazu Taniguchi ,  Hiroaki Okagawa ,  Shin Hiraoka ,  Takahide Joichi ,  Toshihiko Shima

    IPC分类号： H01L33/46

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46

    摘要： A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.

    摘要翻译： 氮化物半导体发光二极管元件1包括具有底表面和上表面并且在其内部包含发光层12b的氮化物半导体层12，并且由金属制成的支撑衬底11接合到氮化物的底表面 半导体层12.在氮化物半导体层12的底面形成用于反射在发光层12b中产生的光的光反射凹部A1。根据氮化物半导体发光二极管元件1，由于从 发光层12b在层状方向上在氮化物半导体层12中传播，被光反射凹部A1反射，其行进方向变化，入射到氮化物半导体层12的上表面的光的比例在关键 角度增加。 因此，与传统的氮化物半导体发光二极管元件相比，光提取效率提高。

    Nitride semiconductor light-emitting diode device
    2.
    发明授权
    Nitride semiconductor light-emitting diode device 失效
    氮化物半导体发光二极管装置

    公开(公告)号：US08716728B2

    公开(公告)日：2014-05-06

    申请号：US12446385

    申请日：2007-10-19

    申请人： Hiromitsu Kudo ,  Hirokazu Taniguchi ,  Hiroaki Okagawa ,  Shin Hiraoka ,  Takahide Joichi ,  Toshihiko Shima

    发明人： Hiromitsu Kudo ,  Hirokazu Taniguchi ,  Hiroaki Okagawa ,  Shin Hiraoka ,  Takahide Joichi ,  Toshihiko Shima

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46

    摘要： A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.

    摘要翻译： 氮化物半导体发光二极管元件1包括具有底表面和上表面并且在其内部包含发光层12b的氮化物半导体层12，并且由金属制成的支撑衬底11接合到氮化物的底表面 半导体层12.在氮化物半导体层12的底面形成用于反射在发光层12b中产生的光的光反射凹部A1。根据氮化物半导体发光二极管元件1，由于从 发光层12b在层状方向上在氮化物半导体层12中传播，被光反射凹部A1反射，其行进方向变化，入射到氮化物半导体层12的上表面的光的比例在关键 角度增加。 因此，与传统的氮化物半导体发光二极管元件相比，光提取效率提高。

    Light emitting device using gan led chip
    5.
    发明申请
    Light emitting device using gan led chip 有权
    发光装置采用led芯片

    公开(公告)号：US20100019247A1

    公开(公告)日：2010-01-28

    申请号：US12311548

    申请日：2007-10-05

    申请人： Takahide Joichi ,  Hiroaki Okagawa ,  Shin Hiraoka ,  Toshihiko Shima ,  Hirokazu Taniguchi

    发明人： Takahide Joichi ,  Hiroaki Okagawa ,  Shin Hiraoka ,  Toshihiko Shima ,  Hirokazu Taniguchi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/32014 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A light emitting device is constituted by flip-chip mounting a GaN-based LED chip 100 of the following (a): (a) the a GaN-based LED chip 100 comprising a light-transmissive substrate 101 and GaN-based semiconductor layer L formed on the light-transmissive substrate 101, wherein the GaN-based semiconductor layer L has a laminate structure containing n-type layer 102, light emitting layer 103 and p-type layer 104 in this order from the light-transmissive substrate 101 side, wherein a positive electrode E101 is formed on the p-type layer 104, said electrode E101 containing a light-transmissive electrode E101a of an oxide semiconductor and a positive contact electrode E101b electrically connected to the light-transmissive electrode, and the area of the positive contact electrode E101b is less than ½ of the area of the upper surface of the p-type layer 104.

    摘要翻译： 发光器件通过倒装芯片安装以下（a）的GaN基LED芯片100构成：（a）GaN基LED芯片100，其包括透光基板101和GaN基半导体层L 形成在透光基板101上，其中GaN基半导体层L具有从透光基板101侧依次包含n型层102，发光层103和p型层104的层叠结构， 其中在p型层104上形成正电极E101，所述电极E101包含氧化物半导体的透光电极E101a和与透光电极电连接的正接触电极E101b，以及阳极的面积 接触电极E101b小于p型层104的上表面的面积的1/2。

    GAN LED ELEMENT AND LIGHT EMITTING DEVICE
    7.
    发明申请
    GAN LED ELEMENT AND LIGHT EMITTING DEVICE 失效
    GAN LED元件和发光装置

    公开(公告)号：US20100012971A1

    公开(公告)日：2010-01-21

    申请号：US12527929

    申请日：2008-02-20

    申请人： Shin Hiraoka ,  Hiroaki Okagawa ,  Takahide Joichi

    发明人： Shin Hiraoka ,  Hiroaki Okagawa ,  Takahide Joichi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A first conductive film 104-1 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 in a GaN-based LED element 100. The contact resistance of a conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is made lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.

    摘要翻译： 第一导电膜104-1和正焊盘电极105通过GaN基LED元件100中的第二导电膜104-2电连接。导电氧化物膜104与p型层102- 使得第一接触部分104A中的第三接触部分104A比第二接触部分104B低，从而通过导电氧化物膜104从正极焊盘电极105提供给p型层102-3的电流流向p型 层102-3主要通过第一接触部分104A。

    GAN LED ELEMENT AND LIGHT EMITTING DEVICE HAVING A STRUCTURE TO REDUCE LIGHT ABSORPTION BY A PAD ELECTRODE INCLUDED THEREIN
    8.
    发明申请
    GAN LED ELEMENT AND LIGHT EMITTING DEVICE HAVING A STRUCTURE TO REDUCE LIGHT ABSORPTION BY A PAD ELECTRODE INCLUDED THEREIN 审中-公开
    GAN LED元件和发光器件，具有减少包含在其中的PAD电极的光吸收的结构

    公开(公告)号：US20120171796A1

    公开(公告)日：2012-07-05

    申请号：US13418416

    申请日：2012-03-13

    申请人： Shin Hiraoka ,  Hiroaki Okagawa ,  Takahide Joichi

    发明人： Shin Hiraoka ,  Hiroaki Okagawa ,  Takahide Joichi

    IPC分类号： H01L33/32

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide film 104 in a GaN-based LED element 100. A contact resistance of the light-transmissive conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.

    摘要翻译： 透光导电氧化物膜104和正焊盘电极105的第一导电膜104-1通过GaN基LED元件100中的透光导电氧化物膜104的第二导电膜104-2电连接 在第一接触部分104A中，透光性导电氧化物膜104与p型层102-3的接触电阻低于第二接触部分104B中的接触电阻，使得从正焊盘电极105供给的电流 通过导电氧化膜104的p型层102-3主要通过第一接触部分104A流到p型层102-3。

    GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein
    9.
    发明授权
    GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein 失效
    GaN LED元件和具有减少其中包括的焊盘电极的光吸收的结构的发光器件

    公开(公告)号：US08158994B2

    公开(公告)日：2012-04-17

    申请号：US12527929

    申请日：2008-02-20

    申请人： Shin Hiraoka ,  Hiroaki Okagawa ,  Takahide Joichi

    发明人： Shin Hiraoka ,  Hiroaki Okagawa ,  Takahide Joichi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide film 104 in a GaN-based LED element 100. A contact resistance of the light-transmissive conductive oxide film 104 with a p-type layer 102-3 in a first contact portion 104A is lower than in a second contact portion 104B, so that a current supplied from the positive pad electrode 105 to the p-type layer 102-3 through the conductive oxide film 104 flows to the p-type layer 102-3 mainly through the first contact portion 104A.

    摘要翻译： 透光导电氧化物膜104和正焊盘电极105的第一导电膜104-1通过GaN基LED元件100中的透光导电氧化物膜104的第二导电膜104-2电连接 在第一接触部分104A中，透光性导电氧化物膜104与p型层102-3的接触电阻低于第二接触部分104B中的接触电阻，使得从正焊盘电极105供给的电流 通过导电氧化膜104的p型层102-3主要通过第一接触部分104A流到p型层102-3。

    LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT
    10.
    发明申请
    LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT 审中-公开
    LED元件和制造LED元件的方法

    公开(公告)号：US20110260196A1

    公开(公告)日：2011-10-27

    申请号：US13174105

    申请日：2011-06-30

    申请人： Hiroaki OKAGAWA ,  Shin Hiraoka ,  Takahide Jouichi ,  Toshihiko Shima

    发明人： Hiroaki OKAGAWA ,  Shin Hiraoka ,  Takahide Jouichi ,  Toshihiko Shima

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/42

    摘要： Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film.

    摘要翻译： 提供了具有通过提高光提取效率来提高输出的新型结构的GaN基LED元件。 一种GaN基LED元件，包括：半导体层叠结构，其中n型GaN基半导体层布置在具有上表面的p型GaN基半导体层的下表面的侧面上， 并且在所述层之间插入包括GaN基半导体的发光部分; 形成在p型GaN基半导体层的上表面上的p侧电极; 和与n型GaN基半导体层电连接的n侧电极，其中，所述p侧电极包括透明导电膜，所述透明导电膜包括用作提取在所述发光部分中产生的光的窗口的窗口区域，以及 通过粗糙化处理形成的平坦部分和粗糙表面部分布置成在覆盖有透明导电膜的窗口区域的p型GaN基半导体层的上表面上形成预定的混合图案。