公开(公告)号：US20090139448A1

公开(公告)日：2009-06-04

申请号：US12323362

申请日：2008-11-25

申请人： Hironobu HIRATA ,  Masayoshi Yajima

发明人： Hironobu HIRATA ,  Masayoshi Yajima

IPC分类号： C30B23/06

CPC分类号： C30B25/12 ,  C23C16/4584 ,  C23C16/4585 ,  C30B29/06

摘要： A vapor phase growth apparatus and a vapor phase growth method capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor is provided. The vapor phase growth apparatus according to embodiments of the present invention includes a holder having an annular shape and on which a wafer can be placed, a disk-shaped susceptor on which the holder can be placed and provided on an upper surface thereof with circumferential steps inscribed in inner circumferential edge of the holder when the holder is placed, a rotation driving mechanism for rotating the susceptor and the holder at a predetermined rotational speed, a heating mechanism for heating the wafer placed on the holder, and a wafer push-up mechanism to push up an undersurface of the holder outside the rotation driving mechanism.

摘要翻译： 提供了一种气相生长装置和气相生长方法，其能够通过阻止在水平圆盘状基座之下产生的金属污染物的渗透来提高晶片的产率。 根据本发明的实施例的气相生长装置包括具有环形形状并且可以放置晶片的保持器，可以将保持器放置在其上的盘形基座，并且在其上表面上设置圆周状的台阶 当保持器被放置时刻在保持器的内圆周边缘中，用于以预定旋转速度旋转基座和保持器的旋转驱动机构，用于加热放置在保持器上的晶片的加热机构和晶片上推机构 以将支架的下表面推向旋转驱动机构外部。

公开(公告)号：US20120184054A1

公开(公告)日：2012-07-19

申请号：US13350102

申请日：2012-01-13

申请人： Kunihiko SUZUKI ,  Hironobu HIRATA

发明人： Kunihiko SUZUKI ,  Hironobu HIRATA

IPC分类号： H01L21/205 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4401 ,  C23C16/24 ,  C23C16/4412

摘要： Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.

摘要翻译： 提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

公开(公告)号：US20090194018A1

公开(公告)日：2009-08-06

申请号：US12354530

申请日：2009-01-15

申请人： Shinya HIGASHI ,  Hirotaka YANAGISAWA ,  Shinichi MITANI ,  Hironobu HIRATA

发明人： Shinya HIGASHI ,  Hirotaka YANAGISAWA ,  Shinichi MITANI ,  Hironobu HIRATA

IPC分类号： C30B25/10

CPC分类号： C23C16/46 ,  C30B25/10 ,  C30B25/12

摘要： An apparatus for manufacturing an epitaxial wafer, includes: a chamber; a gas inlet provided in the chamber and introducing a reaction gas into the chamber; a gas outlet provided in the chamber and exhausting the reaction gas; a rotator unit provided inside the chamber; a wafer holder provided on an upper portion of the rotator unit and holding a wafer; an inner heater provided inside the rotator unit; and an outer heater provided between the rotator unit and an inner wall of the chamber.

摘要翻译： 一种用于制造外延晶片的装置，包括：腔室; 设置在所述室中的气体入口并将反应气体引入所述室中; 气体出口，设置在室中并排出反应气体; 设置在所述腔室内的旋转器单元; 设置在旋转体单元的上部并保持晶片的晶片保持器; 设置在旋转体单元内的内部加热器; 以及设置在所述转子单元和所述室的内壁之间的外部加热器。

公开(公告)号：US20100021631A1

公开(公告)日：2010-01-28

申请号：US12508012

申请日：2009-07-23

申请人： Yoshikazu MORIYAMA ,  Kunihiko SUZUKI ,  Hironobu HIRATA

发明人： Yoshikazu MORIYAMA ,  Kunihiko SUZUKI ,  Hironobu HIRATA

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/44

CPC分类号： C23C16/45572 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/46 ,  C30B25/14 ,  C30B29/06

摘要： In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.

摘要翻译： 在涂布装置中，分配器板104相对于反应气体的流动方向设置在硅晶片101的上游。 分配板104在其中具有布置成不与第一通孔104a相交的第一通孔104a和第二通孔104b。 反应气体通过第一通孔104a并朝向硅晶片101向下流动。此外，冷却气体通过第二通孔104b。

公开(公告)号：US20080311294A1

公开(公告)日：2008-12-18

申请号：US12139172

申请日：2008-06-13

申请人： Hideki ITO ,  Hironobu HIRATA ,  Shinichi MITANI

发明人： Hideki ITO ,  Hironobu HIRATA ,  Shinichi MITANI

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/45504 ,  C23C16/4401 ,  C30B25/14

摘要： There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

摘要翻译： 提供了一种气相生长装置，其减少了外延生长中的颗粒产生和附着材料，从而容易提高生产率。 气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器的底部的排出口，头部，并且覆盖侧 反应器的壁，其上放置半导体晶片的环形保持器。 气体分配板和环形保持器之间的间隔距离被设定为使得从气体供给口向下流过气体分配板的成膜气体在半导体晶片的表面上处于层流状态， 环形支架。