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公开(公告)号：US20060214195A1
公开(公告)日：2006-09-28
申请号：US11249332
申请日：2005-10-14
IPC分类号： H01L29/768
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/14643 , H01L27/14685
摘要： A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner than the first multilevel metallization structure is formed over the pixel array portion.
摘要翻译： 固态成像装置具有其中形成有具有多个像素的像素阵列部分和外围电路部分的基板。 该器件的特征在于，在外围电路部分上形成第一多层金属化结构，并且在像素阵列部分上形成比第一多层金属化结构更薄的第二多层金属化结构。
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公开(公告)号：US08013370B2
公开(公告)日：2011-09-06
申请号：US11249332
申请日：2005-10-14
IPC分类号： H01L31/062
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/14643 , H01L27/14685
摘要： A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner than the first multilevel metallization structure is formed over the pixel array portion.
摘要翻译： 固态成像装置具有其中形成有具有多个像素的像素阵列部分和外围电路部分的基板。 该器件的特征在于，在外围电路部分上形成第一多层金属化结构，并且在像素阵列部分上方形成比第一多层金属化结构更薄的第二多层金属化结构。
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公开(公告)号：US07964902B2
公开(公告)日：2011-06-21
申请号：US11861691
申请日：2007-09-26
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14645 , H01L31/03529 , H04N5/361 , Y02E10/50
摘要： First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
摘要翻译： 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中，通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷，从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中，耗尽层的厚度增加，这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度，而不会增加暗电流噪声。
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公开(公告)号：US08110860B2
公开(公告)日：2012-02-07
申请号：US13104673
申请日：2011-05-10
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14645 , H01L31/03529 , H04N5/361 , Y02E10/50
摘要： First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
摘要翻译： 在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。 第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。 在第一扩散区域的外围部分中，通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷，从而趋于产生暗电流噪声。 用作保护层的第二扩散区防止制造过程中的晶体缺陷。 第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。 在没有形成第二扩散区域的第一扩散区域中，耗尽层的厚度增加，这提高了光检测灵敏度。 这可以提高光电二极管的检测灵敏度，而不会增加暗电流噪声。
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公开(公告)号：US20100188542A1
公开(公告)日：2010-07-29
申请号：US12692037
申请日：2010-01-22
IPC分类号： H04N5/335
摘要： An imaging device includes a pixel array that includes a plurality of pixels, a data read circuit that sequentially reads the data of a given line from the pixel array, a plurality of column analog-digital converters that perform analog-digital conversion on the data from the data read circuit, and a control signal generating circuit that generates a control signal to control the analog-digital conversion.
摘要翻译： 一种成像装置包括：包括多个像素的像素阵列，从像素阵列顺序读取给定行的数据的数据读取电路;多个列模拟数字转换器，对来自 数据读取电路以及产生用于控制模数转换的控制信号的控制信号发生电路。
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6.发明授权Imaging device with light-shielding region, control method thereof and CMOS image sensor with light-shielding region 失效具有遮光区域的成像装置，其控制方法和具有遮光区域的CMOS图像传感器公开(公告)号：US07522199B2
公开(公告)日：2009-04-21
申请号：US10995394
申请日：2004-11-24
IPC分类号： H04N9/64
CPC分类号： H04N5/3658 , H04N5/378
摘要： An imaging device provided with a read circuit in which a light-shielding region is formed in a part of an image region where a plurality of optical/electrical conversion devices is two-dimensionally arrayed in the row and column directions and which converts a optically detected signal outputted from each of the optical/electrical conversion devices for each of the column into a digital signal, comprises a storage device for storing the outputted digital signal outputted in relation with the optical/electrical conversion device in the light-shielding region and a difference calculation device for calculating a difference between the outputted digital signal in relation with the optical/electrical conversion device in a light-receiving region except the light-shielding region and a value stored in the storage device.
摘要翻译： 一种具有读取电路的成像装置，其中在多个光/电转换装置在行和列方向上二维排列的图像区域的一部分中形成有遮光区域，并且将光学检测 从每个列的每个光/电转换装置输出的信号为数字信号，包括存储装置，用于存储在光屏蔽区域中输出的与光/电转换装置相关的数字信号， 计算装置，用于计算除光屏蔽区域之外的光接收区域中与光/电转换装置相关的输出数字信号之间的差和存储在存储装置中的值。
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公开(公告)号：US08477384B2
公开(公告)日：2013-07-02
申请号：US12211613
申请日：2008-09-16
IPC分类号： H04N1/40
CPC分类号： H01L27/14623 , H01L27/14603 , H04N5/361 , H04N5/378
摘要： A solid-state image pickup device and image pickup method eliminate a dark-current component by adjusting the black level appropriately even if the dark-current component varies among horizontal lines. A pixel array includes light-receiving pixel elements and light-blocking pixel elements disposed such that horizontal lines include the light-blocking pixel elements individually. A readout circuit block reads pixel signals of each of the horizontal lines from the pixel array, inputs the pixel signals to ADC circuits (column ADC circuit block), and outputs the pixel signals of the light-blocking pixel elements. A ramp signal generation circuit obtains the pixel signals of the light-blocking pixel elements output from the readout circuit block, generates a ramp signal by using a reference level of AD conversion adjusted for each of the horizontal lines in accordance with the obtained pixel signals of the light-blocking pixel elements, and inputs the ramp signal to the ADC circuits.
摘要翻译： 固态图像拾取装置和图像拾取方法即使在暗电流分量在水平线之间变化时也可以适当地调整黑电平来消除暗电流分量。 像素阵列包括光接收像素元件和被设置为使得水平线分别包括遮光像素元件的遮光像素元件。 读出电路块从像素阵列读取每条水平线的像素信号，将像素信号输入到ADC电路（列ADC电路块），并输出遮光像素元件的像素信号。 斜坡信号发生电路获取从读出电路块输出的遮光像素元件的像素信号，根据所获得的像素信号，通过使用针对每个水平线调整的AD转换的参考电平来生成斜坡信号 遮光像素元件，并将斜坡信号输入到ADC电路。
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公开(公告)号：US07477299B2
公开(公告)日：2009-01-13
申请号：US11133386
申请日：2005-05-20
CPC分类号： H04N5/3598 , H03F3/087 , H04N5/3575 , H04N5/363
摘要： A second source follower circuit of a reference voltage generator includes a transistor having the same characteristics as a first source follower circuit of a pixel. Accordingly, the second source follower circuit can generate a second reference voltage according to the change in characteristics of the first source follower circuit. A noise voltage switching circuit outputs a first voltage as a noise voltage to a pixel signal generator when the noise voltage is equal to or lower than the second reference voltage. In a reset state, the noise voltage and the second reference voltage always have a predetermined voltage difference. Therefore, deterioration in image quality can be prevented even when capturing a subject having high brightness. Since a trimming circuit or the like selecting any one of a plurality of reference voltages according to characteristics of a formed transistor becomes unnecessary, the cost of an imaging device can be reduced.
摘要翻译： 参考电压发生器的第二源极跟随器电路包括具有与像素的第一源极跟随器电路相同的特性的晶体管。 因此，第二源极跟随器电路可以根据第一源极跟随器电路的特性的变化产生第二参考电压。 当噪声电压等于或低于第二参考电压时，噪声电压切换电路将作为噪声电压的第一电压输出到像素信号发生器。 在复位状态下，噪声电压和第二参考电压总是具有预定的电压差。 因此，即使在拍摄具有高亮度的被摄体的情况下也能够防止图像质量的劣化。 由于不需要根据形成的晶体管的特性选择多个参考电压中的任何一个的微调电路等，因此可以降低成像装置的成本。
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9.发明授权Image sensor capable of cancelling offset voltage of semiconductor device included therein 失效能够消除其中包含的半导体器件的偏移电压的图像传感器公开(公告)号：US07301487B2
公开(公告)日：2007-11-27
申请号：US11429158
申请日：2006-05-08
IPC分类号： H03M1/00
CPC分类号： H03M1/0607 , H04N5/3575 , H04N5/3742 , H04N5/378
摘要： An image sensor includes: a pixel unit that outputs a first signal including an offset voltage inherent to a pixel; a CDS unit that performs correlated double sampling of a second signal that is obtained from the first signal by canceling the offset voltage inherent to the pixel, and outputs the second signal after the correlated double sampling as a third signal including an offset voltage due to the CDS unit; and an ADC unit that performs analog-to-digital conversion of a fourth signal that is obtained from the third signal by canceling the offset voltage due to the CDS unit.
摘要翻译： 图像传感器包括：像素单元，输出包括像素固有的偏移电压的第一信号; CDS单元，通过消除像素固有的偏移电压来执行从第一信号获得的第二信号的相关双采样，并将相关双采样之后的第二信号作为第三信号输出，该第三信号包括由于 CDS单位; 以及ADC单元，其通过消除由于CDS单元引起的偏移电压来执行从第三信号获得的第四信号的模数转换。
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公开(公告)号：US20060170795A1
公开(公告)日：2006-08-03
申请号：US11138483
申请日：2005-05-27
IPC分类号： H04N5/217
CPC分类号： H04N5/3575 , H04N5/378
摘要： A differential amplifier has a first input terminal to which a voltage of a noise signal of the solid-state imaging device is supplied and a second input terminal to which a voltage of a temporary data signal having the noise signal of the solid-state imaging device superposed thereon is supplied. The differential amplifier inverts an output signal when a magnitude relationship in voltage between the first and second input terminals becomes reverse. A measurement circuit measures a variation amount of a voltage of the second input terminal from when the voltage of the second input terminal begins to vary in a direction to reverse the magnitude relationship to when the output signal of the differential amplifier is inverted, and outputs a measurement result as a digital value indicating a voltage of a real data signal obtained by removing the noise signal from the temporary data signal.
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