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12 条记录 (耗时 0.02 秒)

    Transfer mark structure for multi-layer interconnecting and method for the manufacture thereof
    5.
    发明授权
    Transfer mark structure for multi-layer interconnecting and method for the manufacture thereof 失效
    用于多层互连的转印标记结构及其制造方法

    公开(公告)号：US06495928B1

    公开(公告)日：2002-12-17

    申请号：US09467910

    申请日：1999-12-21

    申请人： Yasushi Hashizume ,  Takahisa Eimori

    发明人： Yasushi Hashizume ,  Takahisa Eimori

    IPC分类号： H01L2348

    CPC分类号： H01L21/2007 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A transfer mark structure for a multi-layer interconnecting process for avoiding the influence of dishing when a groove pattern for multi-layer interconnection is formed, and for improving the accuracy and stability of reading the transfer mark used for transfer in the following step so as to align with a location of transfer in the preceding step, and a method for producing such a transfer mark for the multi-layer interconnecting process. The underlying layer 102 immediately under the transfer mark 22 for photoengraving formed in the step of connecting between interconnecting layers 16 has a groove-like pattern.

    摘要翻译： 一种用于在形成用于多层互连的凹槽图案时避免凹陷的影响的多层互连工艺的转印标记结构，并且用于提高读取用于下一步骤中转印的转印标记的精度和稳定性，以便 以在前一步骤中与转移位置对准，以及用于产生用于多层互连过程的转移标记的方法。 在连接互连层16的步骤中形成的用于光刻的转印标记22下面的下层102具有凹槽状图案。

    Spiral inductor and transformer
    6.
    发明申请
    Spiral inductor and transformer 失效
    螺旋电感和变压器

    公开(公告)号：US20050073025A1

    公开(公告)日：2005-04-07

    申请号：US10501883

    申请日：2003-02-04

    申请人： Yasushi Hashizume ,  Kazuyasu Nishikawa

    发明人： Yasushi Hashizume ,  Kazuyasu Nishikawa

    IPC分类号： H01F17/00 ,  H01F27/34 ,  H01L23/522 ,  H01L29/00

    CPC分类号： H01F17/0006 ,  H01F27/34 ,  H01F2017/0046 ,  H01F2017/008 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A spiral inductor in which, where a spiral interconnect and an underpass interconnect intersect with each other, at least one layer of an electrically conductive film that forms the spiral interconnect is the underpass interconnect. The spiral interconnect has a smaller number of electrically conductive layers in the intersecting portion and has a wider interconnect width than the spiral interconnect a non-intersecting portion.

    摘要翻译： 一种螺旋电感器，其中螺旋互连和地下通道互连彼此相交，形成螺旋互连的至少一层导电膜是地下通道互连。 螺旋互连在交叉部分中具有较少数量的导电层，并且具有比螺旋互连更宽的互连宽度的非相交部分。

    Method of manufacturing DRAM capable of randomly inputting/outputting memory information at random
    7.
    发明授权
    Method of manufacturing DRAM capable of randomly inputting/outputting memory information at random 失效
    制造随机输入/输出存储器信息的DRAM的方法

    公开(公告)号：US5604145A

    公开(公告)日：1997-02-18

    申请号：US468391

    申请日：1995-06-06

    申请人： Yasushi Hashizume ,  Hiroki Shinkawata

    发明人： Yasushi Hashizume ,  Hiroki Shinkawata

    IPC分类号： H01L21/28 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L27/10808

    摘要： Transfer gate transistors are formed on a main surface of a semiconductor substrate. The transfer gate transistors have impurity regions for serving as source/drain regions. A first interlayer insulating film having a substantially flat upper surface is formed to cover the transfer gate transistors. The first interlayer insulating film is provided with contact holes reaching the impurity regions. Plugs are formed in the contact holes. Capacitors are only formed on the flat upper surface of the first interlayer insulating film. Lower electrodes of the capacitors and the plugs are electrically connected with each other through barrier layers. Thus, it is possible to improve capacitances of capacitors in a DRAM.

    摘要翻译： 传输栅极晶体管形成在半导体衬底的主表面上。 传输栅晶体管具有用作源/漏区的杂质区。 形成具有基本平坦的上表面的第一层间绝缘膜以覆盖传输栅极晶体管。 第一层间绝缘膜设置有到达杂质区的接触孔。 插头形成在接触孔中。 电容器仅形成在第一层间绝缘膜的平坦的上表面上。 电容器和插头的下电极通过阻挡层彼此电连接。 因此，可以提高DRAM中的电容器的电容。

    Spiral inductor and transformer
    8.
    发明授权
    Spiral inductor and transformer 失效
    螺旋电感和变压器

    公开(公告)号：US07064411B2

    公开(公告)日：2006-06-20

    申请号：US10501883

    申请日：2003-02-04

    申请人： Yasushi Hashizume ,  Kazuyasu Nishikawa

    发明人： Yasushi Hashizume ,  Kazuyasu Nishikawa

    IPC分类号： H01L29/00 ,  H03H7/01

    CPC分类号： H01F17/0006 ,  H01F27/34 ,  H01F2017/0046 ,  H01F2017/008 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A spiral inductor in which, where a spiral interconnect and an underpass interconnect intersect with each other, at least one layer of an electrically conductive film that forms the spiral interconnect is the underpass interconnect. The spiral interconnect has a smaller number of electrically conductive layers in the intersecting portion and has a wider interconnect width than the spiral interconnect in a non-intersecting portion.

    摘要翻译： 一种螺旋电感器，其中螺旋互连和地下通道互连彼此相交，形成螺旋互连的至少一层导电膜是地下通道互连。 螺旋互连在交叉部分中具有较少数量的导电层，并且在不相交部分中具有比螺旋互连更宽的互连宽度。

    Semiconductor device manufacturing apparatus
    9.
    发明授权
    Semiconductor device manufacturing apparatus 失效
    半导体器件制造设备

    公开(公告)号：US5245158A

    公开(公告)日：1993-09-14

    申请号：US767684

    申请日：1991-09-30

    申请人： Yasushi Hashizume ,  Mitsuhiro Tomikawa

    发明人： Yasushi Hashizume ,  Mitsuhiro Tomikawa

    IPC分类号： H01L21/22 ,  H01L21/00

    CPC分类号： H01L21/67115

    摘要： A semiconductor device manufacturing apparatus has a heat retaining tube which can be freely placed in and pulled out of a processing chamber of the apparatus. When located within the processing chamber, the heat retaining tube surrounds a boat with the semiconductor wafers mounted thereon. After the thermal processing of the semiconductor wafers has been completed, the heat retaining tube and the semiconductor wafers are pulled out of the processing chamber together. In this way, the difference in the temperature of the center and periphery of the semiconductor wafer is decreased, and semiconductor devices, which have excellent performance and which are free from crystalline defects or dislocation, can thus be manufactured.